10 Adding a New Field.xps

XPS数据分析之答禄夫天创作
纵坐标：Intensity(cps)
横坐标：bindingenergy（eV）
除了氢氦元素，其他的元素都可以进行分析；先进行宽扫，确定样品有何种元素，再对该元素进行窄扫。

该元素的分歧键接方式都对应分歧的峰，所以对元素窄扫的峰要进行分峰（分峰之前要进行调整基线）。

如何分峰，分歧的键接方式会对应分歧的结合能。

第一步：先把元素的窄扫峰用origin画出来；
纵坐标：Intensity(cps)
横坐标：bindingenergy（eV）
第二步：调整基线；
选择CeateBaseline-----next------next-----add/modify添加（双击）或去除（delete）基点，包管基线水平-----Finish
最小化图，会出现调整基线后的坐标。

拔出一列，
单机右键选择setcolumnvalues输入col（b）-col（d）：即开始纵坐标减去调整基线后的纵坐标。

再用横坐标与刚开始得到的纵坐标作图------调整基线后的XPS 窄扫图。

第三步：对峰求积分面积；
选择integratepeaks-----next-------狂点------完成
即area为峰的面积。

第四步：分峰较难（有专门的分峰软件，origin也能分峰）
第五步：求组分元素比：
元素比等于：窄扫峰面积/XPS灵敏度因子（每一个元素的灵敏度因子纷歧致）
咱们这边的XPS设备选择的是铝板（AlKα）。

altiumdesigner10Altium Designer 10 was a previous version of the electronic design automation (EDA) software developed by Altium. It was released in 2010 and offered a range of features for designing and manufacturing printed circuit boards (PCBs). Some of the key features of Altium Designer 10 included:1. Unified Design Environment: Altium Designer 10 provided a unified platform for designing PCBs, allowing users to complete schematic capture, PCB layout, and simulation within a single software.2. Interactive Routing: The software offered advanced routing capabilities, allowing users to route their PCB designs interactively. It supported differential prs routing, length tuning, and high-speed design constrnts.3. Component Libraries: Altium Designer 10 includeda comprehensive library of components, symbols, andfootprints, making it easier for users to select and place components in their designs.4. Simulation and Analysis: The software offered various simulation and analysis tools, allowing users to verify and optimize their designs before manufacturing. This included signal integrity analysis, electromagnetic interference (EMI) analysis, and power distribution network (PDN) analysis.5. 3D Visualization: Altium Designer 10 supported 3D visualization, allowing users to view their PCB designs in a realistic 3D environment. This helped in identifying potential mechanical interference and improving overall design integrity.6. Manufacturing Documentation: The software provided tools for generating manufacturing documentation, such as Gerber files, assembly drawings, and bill of materials (BOM) reports.It's important to note that Altium Designer 10 is an older version of the software, and the latest version, as of September 2021, is Altium Designer 21. This newer version offers enhanced features and improved performance compared to Altium Designer 10.。

win10注册表red add字符串中包含空格、双引号等特殊字符的处理方法（最新版6篇）篇1 目录1.引言2.Win10 注册表概述3.Red Add 字符串中包含特殊字符的问题4.解决方法一：使用双反斜杠转义5.解决方法二：使用引号转义6.解决方法三：使用注册表编辑器软件7.结论篇1正文【引言】在 Win10 操作系统中，注册表是一个重要的组件，用于存储系统和应用程序的配置信息。

在注册表中，字符串值常常用于表示各种设置。

然而，在处理包含空格、双引号等特殊字符的字符串时，可能会遇到一些问题。

本文将介绍在 Win10 注册表中处理 Red Add 字符串中包含特殊字符的方法。

【Win10 注册表概述】Win10 注册表是一个庞大的数据库，存储了操作系统和应用程序的配置信息。

它由两个部分组成：用户注册表和系统注册表。

用户注册表存储了与用户有关的设置，而系统注册表存储了与系统有关的设置。

注册表中的数据以键值对的形式存储，其中键表示设置的名称，值表示设置的内容。

【Red Add 字符串中包含特殊字符的问题】在 Win10 注册表中，Red Add 字符串可能会包含空格、双引号等特殊字符。

当这些特殊字符出现在字符串值中时，可能会导致应用程序无法正确读取或解析字符串，从而引发各种问题。

【解决方法一：使用双反斜杠转义】为了解决 Red Add 字符串中包含特殊字符的问题，可以使用双反斜杠（``）对特殊字符进行转义。

在输入包含特殊字符的字符串时，将每个特殊字符替换为双反斜杠。

例如，将包含空格的字符串 "Hello World" 替换为 "Hello World"。

这样，在读取字符串时，双反斜杠会被解释为一个普通的反斜杠，从而正确处理字符串。

【解决方法二：使用引号转义】另一种解决方法是使用引号（`""` 或 `"`）将特殊字符括起来。

在输入包含特殊字符的字符串时，将每个特殊字符用引号括起来。

Copyright © 2011 Casa Software Ltd. 1XPS SpectraThe XPS technique is used to investigate the chemistry at the surface of a sample.Figure 1: Schematic of an XPS instrument.The basic mechanism behind an XPS instrument is illustrated in Figure 1. Photons of a specific energy are used to excite theelectronic states of atoms below the surface of the sample. Electrons ejected from the surface are energy filtered via a hemispherical analyser (HSA) before the intensity for a defined energy is recorded by a detector. Since core level electrons in solid-state atoms are quantized, the resulting energy spectra exhibit resonance peaks characteristic of the electronic structure for atoms at the sample surface. While the x-rays may penetrate deep into the sample, the escape depth of the ejected electrons is limited. That is, for energies around 1400 eV, ejected electrons from depths greater than 10nm have a low probability of leaving the surface without undergoing an energy loss event, and therefore contribute to the background signal rather than well defined primary photoelectric peaks.In principle, the energies of the photoelectric lines are well defined in terms of the binding energy of the electronic states of atoms. Further, the chemical environment of the atoms at the surface result in well defined energy shifts to the peak energies. In the case of conducting samples, for which the detected electron energies can bereferenced to the Fermi energy of the spectrometer, an absolute energy scale can be established, thus aiding the identification of species. However, for non-conducting samples the problem of energy calibration is significant. Electrons leaving the samplesurface cause a potential difference to exist between the sample and the spectrometer resulting in a retarding field acting on the electronsCopyright © 2011 Casa Software Ltd. 2escaping the surface. Without redress, the consequence can be peaks shifted in energy by as much as 150 eV. Charge compensationdesigned to replace the electrons emitted from the sample is used to reduce the influence of sample charging on insulating materials, but nevertheless identification of chemical state based on peak positions requires careful analysis.XPS is a quantitative technique in the sense that the number of electrons recorded for a given transition is proportional to the number of atoms at the surface. In practice, however, to produce accurate atomic concentrations from XPS spectra is not straight forward. The precision of the intensities measured using XPS is not in doubt; that is intensities measured from similar samples are repeatable to good precision. What may be doubtful are resultsreporting to be atomic concentrations for the elements at the surface. An accuracy of 10% is typically quoted for routinely performed XPS atomic concentrations. For specific carefully performed and characterised measurements better accuracy is possible, but for quantification based on standard relative sensitivity factors,precision is achieved not accuracy. Since many problems involve monitoring changes in samples, the precision of XPS makes the technique very powerful.The first issue involved with quantifying XPS spectra is identifying those electrons belonging to a given transition. The standard approach is to define an approximation to the background signal.The background in XPS is non-trivial in nature and results from all those electrons with initial energy greater than the measurement energy for which scattering events cause energy losses prior to emission from the sample. The zero-loss electrons constituting the photoelectric peak are considered to be the signal above thebackground approximation. A variety of background algorithms are used to measure the peak area; none of the practical algorithms arecorrect and therefore represent a source for uncertainty whencomputing the peak area. Peak areas computed from the background subtracted data form the basis for most elemental quantification results from XPS.Figure 2: An example of a typical XPS survey spectrum taken from acompound sample.Copyright © 2011 Casa Software Ltd. 3The data in Figure 2 illustrates an XPS spectrum measured from a typical sample encountered in practice. The inset tile within Figure 2 shows the range of energies associated with the C 1s and K 2p photoelectric lines. Since these two transitions include multipleoverlapping peaks, there is a need to apportion the electrons to the C 1s or the K 2p transitions using a synthetic peak model fitted to the data. The degree of correlation between the peaks in the model influences the precision and therefore the accuracy of the peak area computation.Relative sensitivity factors of photoelectric peaks are often tabulated and used routinely to scale the measured intensities as part of the atomic concentration calculation. These RSF tables can only be accurate for homogenous materials. If the sample varies incomposition with depth, then the kinetic energy of the photoelectric line alters the depth from which electrons are sampled. It is not uncommon to see evidence of an element in the sample by considering a transition at high kinetic energy, but find littleevidence for the presence of the same element when a lower kinetic energy transition is considered. Transitions of this nature might be Fe 2p compared to Fe 3p both visible in Figure 2, where the relative intensity of these peaks will depend on the depth of the iron with respect to the surface. Sample roughness and angle of the sample to the analyser also changes the relative intensity of in-homogenous samples, thus sample preparation and mounting can influence quantification values.Figure 3: Germanium Oxide relative intensity to elemental germaniummeasured using photoelectrons with kinetic energy in the range 262 eV to 272eV.Figure 4: Germanium Oxide relative intensity to elemental germanium measured using photoelectrons with kinetic energy in the range 1452 eV to1460 eV.Copyright © 2011 Casa Software Ltd. 4The chemical shifts seen in XPS data are a valuable source ofinformation about the sample. The spectra in Figure 3 and Figure 4 illustrate the separation of elemental and oxide peaks of germanium due to chemical state. Both spectra were acquired from the same sample under the same conditions with the exception that the ejected electrons for the Ge 3d peaks are about 1200 eV more energetic that the Ge 2p electrons. The consequence of choosing to quantify based on one of these transitions is that the proportion of oxide toelemental germanium differs significantly. The oxide represents an over layer covering of the elemental germanium and therefore the low energy photoelectrons from the Ge 2p line are attenuated resulting in a shallower sampling depth compared to the moreenergetic Ge 3d electrons. Hence the volume sampled by the Ge 2p transition favours the oxide signal, while the greater depth from which Ge 3d electrons can emerge without energy loss favours the elemental germanium. While these variations may seem a problem, such changes in the spectra are also a source for information about the sample.Tilting the sample with respect to the axis of the analyser results in changing the sampling depth for a given transition and therefore data collected at different angles vary due to the differing composition with depth. Figure 5 is a sequence of Si 2p spectra measured from the same silicon sample at different angles. The angles associated with the spectra are with respect to the axis of the analyser and thesample surface. Data measured at 30° favours the top most oxidelayers; while at 90° the elemental substrate becomes dominant in the spectrum.Figure 5: Angle resolved Si 2p spectra showing the changes to the spectraresulting from tilting the sample with respect to the analyser axis.Copyright © 2011 Casa Software Ltd. 5Other Peaks in XPS SpectraNot all peaks in XPS data are due to the ejection of an electron by a direct interaction with the incident photon. The most notable are the Auger peaks, which are explained in terms of the decay of a more energetic electron to fill the vacant hole created by the x-ray photon, combined with the emission of an electron with an energycharacteristic of the difference between the states involved in the process. The spectrum in Figure 2 includes a sequence of peaks labelled O KLL. These peaks represent the energy of the electrons ejected from the atoms due to the filling of the O 1s state (K shell) by an electron from the L shell coupled with the ejection of an electron from an L shell.Unlike the photoelectric peaks, the kinetic energy of the Auger lines is independent of the photon energy for the x-ray source. Since the kinetic energy of the photoelectrons are given in terms of the photon energy , the binding energy for the ejected electron and a work function by the relationship , altering the photon energy by changing the x-ray anode material causes the Auger lines and the photoelectric lines to move in energy relative to one another.Figure 6: Elemental Silicon loss peaks and also x-ray satellite peak.Less prominent than Auger lines are x-ray satellite peaks. Data acquired using a non-monochromatic x-ray source create satellite peaks offset from the primary spectral lines by the difference in energy between the resonances in the x-ray spectrum of the anode material used in the x-ray gun and also in proportion to the peaks in the x-ray spectrum for the anode material. Figure 6 indicates anexample of a satellite peak to the primary Si 2p peak due to the use of a magnesium anode in the x-ray source. Note that Auger line energies are independent of the photon energy and therefore do not have satellite peaks.A further source for peaks in the background signal is due to resonant scattering of electrons by the surface materials. PlasmonCopyright © 2011 Casa Software Ltd. 6peaks for elemental silicon are also labelled on Figure 6. Thesharpness of these plasmon peaks in Figure 6 is due to the nature of the material through which the photoelectrons must pass. For silicon dioxide, the loss structures are much broader and follow the trend of a typical XPS background signal. The sharp loss structures in Figure 6 are characteristic of pure metallic-like materials.Basic Quantification of XPS SpectraXPS counts electrons ejected from a sample surface when irradiated by x-rays. A spectrum representing the number of electrons recorded at a sequence of energies includes both a contribution from a background signal and also resonance peaks characteristic of the bound states of the electrons in the surface atoms. The resonance peaks above the background are the significant features in an XPS spectrum shown in Figure 7.XPS spectra are, for the most part, quantified in terms of peak intensities and peak positions. The peak intensities measure how much of a material is at the surface, while the peak positionsindicate the elemental and chemical composition. Other values, such as the full width at half maximum (FWHM) are useful indicators of chemical state changes and physical influences. That is, broadening of a peak may indicate: a change in the number of chemical bonds contributing to a peak shape, a change in the sample condition (x-raydamage) and/or differential charging of the surface (localiseddifferences in the charge-state of the surface).Figure 7: XPS and Auger peaks appear above a background of scattered electrons .Figure 8: Quantification regionsCopyright © 2011 Casa Software Ltd. 7The underlying assumption when quantifying XPS spectra is that the number of electrons recorded is proportional to the number of atoms in a given state. The basic tool for measuring the number ofelectrons recorded for an atomic state is the quantification region. Figure 8 illustrates a survey spectrum where the surface is characterised using a quantification table based upon valuescomputed from regions. The primary objectives of the quantification region are to define the range of energies over which the signal can be attributed to the transition of interest and to specify the type of approximation appropriate for the removal of background signal not belonging to the peak.Figure 9: O 1s RegionHow to Compare SamplesA direct comparison of peak areas is not a recommended means of comparing samples for the following reasons. An XPS spectrum is a combination of the number of electrons leaving the sample surface and the ability of the instrumentation to record these electrons; not all the electrons emitted from the sample are recorded by theinstrument. Further, the efficiency with which emitted electrons are recorded depends on the kinetic energy of the electrons, which in turn depends on the operating mode of the instrument. As a result, the best way to compare XPS intensities is via, so called, percentage atomic concentrations. The key feature of these percentage atomic concentrations is the representation of the intensities as a percentage, that is, the ratio of the intensity to the total intensity of electrons in the measurement. Should the experimental conditions change in any way between measurements, for example the x-ray gun poweroutput, then peak intensities would change in an absolute sense, butall else being equal, would remain constant in relative terms.Relative Intensity of Peaks in XPSEach element has a range of electronic states open to excitation by the x-rays. For an element such as silicon, both the Si 2s and Si 2p transitions are of suitable intensity for use in quantification. The rule for selecting a transition is to choose the transition for a givenelement for which the peak area, and therefore in principle the RSF,Copyright © 2011 Casa Software Ltd. 8is the largest, subject to the peak being free from other interfering peaks.Transitions from different electronic states from the same element vary in peak area. Therefore, the peak areas calculated from the data must be scaled to ensure the same quantity of silicon, say, is determined from either the Si 2s or the Si 2p transitions. Moregenerally, the peak areas for transitions from different elements must be scaled too. A set of relative sensitivity factors are necessary for transitions within an element and also for all elements, where the sensitivity factors are designed to scale the measured areas so that meaningful atomic concentrations can be obtained, regardless of the peak chosen.Figure 10: Regions Property Page.Quantification of the spectrum in Figure 8 requires the selection of one transition per element. Figure 9 illustrates the area targeted by the region defined for the O 1s transition; similar regions are defined for the C 1s, N 1s and Si 2p transitions leading to the quantification table displayed over the data in Figure 8. The Regions property page shown in Figure 10 provides the basic mechanism for creating and updating the region parameters influencing the computed peak area. Relative sensitivity factors are also entered on the Regions property page. The computed intensities are adjusted for instrumenttransmission and escape depth corrections, resulting in the displayed quantification table in Figure 8.Quantification regions are useful for isolated peaks. Unfortunately not all samples will offer clearly resolved peaks. A typical example of interfering peaks is any material containing both aluminium and copper. When using the standard magnesium or aluminium x-rayanodes, the only aluminium photoelectric peaks available formeasuring the amount of aluminium in the sample are Al 2s and Al 2p. Both aluminium peaks appear at almost the same binding energy as the Cu 3s and Cu 3p transitions. Thus estimating the intensity of the aluminium in a sample containing these elements requires a means of modelling the data envelope resulting from the overlapping transitions illustrated in Figure 11.Copyright © 2011 Casa Software Ltd. 9Figure 11: Aluminium and Copper both in evidence at the surface.Overlapping PeaksTechniques for modelling data envelopes not only apply toseparating elemental information, such as the copper and aluminium intensities in Figure 11, but also apply to chemical state information about the aluminium itself. Intensities for the aluminium oxide and metallic states in Figure 11 are measured using synthetic line-shapes or components. An XPS spectrum typically includes multipletransitions for each element; while useful to identify the composition of the sample, the abundance of transitions frequently leads to interference between peaks and therefore introduces the need toconstruct peak models. Figure 12 illustrates a spectrum where a thin layer of silver on silicon (University of Iowa, Jukna, Baltrusaitis and Virzonis, 2007, unpublished work) introduces an interference with the Si 2p transition from the Ag 4s transition.Figure 12: Elemental and oxide states of SiliconCopyright © 2011 Casa Software Ltd. 10The subject of peak-fitting data is complex. A model is typically created from a set of Gaussian/Lorentzian line-shapes. Without careful model construction involving additional parameter constraints, the resulting fit, regardless of how accurate arepresentation of the data, may be of no significance from a physical perspective. The subject of peak fitting XPS spectra is dealt with in detail elsewhere.Peak models are created using the Components property page on the Quantification Parameters dialog window shown in Figure 13. A range of line-shapes are available for constructing the peak models including both symmetric and asymmetric functional forms. The intensities modelled using these synthetic line-shapes are scaled using RSFs and quantification using both components and regions are offered on the Report Spec property page of CasaXPS.Peak PositionsIn principle, the peak positions in terms of binding energy provide information about the chemical state for a material. The data in Figure 2 provides evidence for at least three chemical states of silicon. Possible candidates for these silicon states might be SiO 2, Si 2O 3, SiO, Si 2O or Si, however an assignment based purely on the measured binding energies for the synthetic line-shapes relies on an accurate calibration for the energy scale. Further, the ability to calibrate the energy scale is dependent on the success of the chargecompensation for the sample and the availability of a peak at known binding energy to provide a reference for shifting the energy scale.Figure 13: Components property page on the Quantification Parametersdialog window.Charge CompensationThe XPS technique relies on electrons leaving the sample. Unless these emitted electrons are replaced, the sample will charge relative to the instrument causing a retarding electric field at the sample surface. For conducting samples electrically connected to the instrument, the charge balance is easily restored; however, forCopyright © 2011 Casa Software Ltd. 11insulating materials electrons must be replaced via an external source. Insulating samples are normally electrically isolated from the instrument and low energy electrons and/or ions are introduced at the sample surface. The objective is to replace the photoelectrons to provide a steady state electrical environment from which the energy of the photoelectrons can be measured.Figure 14: Insulating sample before and after charge compensation.The data in Figure 14 shows spectra from PTFE (Teflon) acquired with and without charge compensation. The C 1s peaks are shifted by 162 eV between the two acquisition conditions, but even more importantly, the separation between the C 1s and the F 1s peaks differ between the two spectra by 5 eV. Without effective charge compensation, the measured energy for a photoelectric line may change as a function of kinetic energy of the electrons.Charge compensation does not necessarily mean neutralization of the sample surface. The objective is to stabilize the sample surface to ensure the best peak shape, whilst also ensuring peak separation between transitions is independent of the energy at which the electrons are measured. Achieving a correct binding energy for a known transition is not necessarily the best indicator of good charge compensation. A properly charge compensated experiment typically requires shifting in binding energy using the Calibration property page, but the peak shapes are good and the relative peak positions are stable.A nominally conducting material may need to be treated as aninsulating sample. Oxide layers on metallic materials can transform a conducting material into an insulated surface. For example, aluminium metal oxidizes even in vacuum and a thin oxide layer behaves as an insulator.Calibrating spectra in CasaXPS is performed using the Calibration property page on the Spectrum Processing dialog window.Copyright © 2011 Casa Software Ltd. 12Depth Profiling using XPSFigure 15: Segment of an XPS depth profile.While XPS is a surface sensitive technique, a depth profile of the sample in terms of XPS quantities can be obtained by combining a sequence of ion gun etch cycles interleaved with XPS measurements from the current surface. An ion gun is used to etch the material for a period of time before being turned off whilst XPS spectra are acquired. Each ion gun etch cycle exposes a new surface and the XPS spectra provide the means of analysing the composition of these surfaces.Figure 16: The set of O 1s spectra measured during a depth profilingexperiment.The set of XPS spectra corresponding to the oxygen 1s peaks from a depth profile experiment depicted logically in Figure 15 aredisplayed in Figure 16. The objective of these experiments is to plot the trend in the quantification values as a function of etch-time.The actual depth for each XPS analysis is dependent on the etch-rate of the ion-gun, which in turn depends on the material being etched at any given depth. For example, the data in Figure 16 derives from a multilayer sample consisting of silicon oxide alternating withtitanium oxide layers on top of a silicon substrate. The rate at whichCopyright © 2011 Casa Software Ltd. 13the material is removed by the ion gun may vary between the layers containing silicon oxide and those layers containing titanium oxide, with a further possible variation in etch-rate once the siliconsubstrate is encountered. The depth scale is therefore dependent on characterizing the ion-gun however each XPS measurement istypical of any other XPS measurement, with the understanding that the charge compensation steady state may change between layers.Figure 17: XPS Depth Profile of silicon oxide/titanium oxide multilayersample profiled using a Kratos Amicus XPS instrument.Figure 18: Logical structure of the VAMAS blocks in an XPS depth profile.The XPS depth profile in Figure 17 is computed from the VAMAS file data logically ordered in CasaXPS as shown in Figure 18. The O 1s spectra displayed in Figure 16 are highlighted in Figure 18. Onepoint to notice about the profile in Figure 17 is that the atomicconcentration calculation for the O 1s trace is relatively flat for the silicon oxide and titanium oxide layers, in contrast to the raw data in Figure 16, where the chemically shifted O 1s peaks would appear to be more intense for the silicon oxide layers compared to the titanium oxide layers. This observation is supported by the plot of adjustedCopyright © 2011 Casa Software Ltd. 14peak areas in Figure 19, where again the O 1s trace is far from flat. The profile in Figure 17 is far more physically meaningful than the variations displayed in Figure 19. Normalization of the XPSintensities to the total signal measured on a layer by layer basis is important for understanding the sample. This example is a good illustration of why XPS spectra should be viewed in the context of the other elements measured from a surface.The details of how to analyze a depth profile in CasaXPS arediscussed at length in The Casa Cookbook and other manual pages available from the Help option on the Help menu.Figure 19: Peak areas scaled by RSF used to compute the atomicconcentration plots in Figure 17.Understanding Relative Sensitivity Factors for Doublet TransitionsWhen quantifying XPS spectra, Relative Sensitivity Factors (RSF) are used to scale the measured peak areas so variations in the peak areas are representative of the amount of material in the sample surface. An element library typically contains lists of RSFs for XPS transitions. For some transitions more than one peak appears in the data in the form of doublet pairs and, in the case of the default CasaXPS library, three entries are available for each set of doublet peaks: one entry for the combined use of both doublet peaks in a quantification table and two entries for situations where only one ofthe two possible peaks are used in the quantification. A commoncause of erroneous quantification is the inappropriate use of these optional RSF entries.Figure 20: Example of quantification regions and components used toquantify peak areas.Copyright © 2011 Casa Software Ltd. 15The data in Figure 20 are a set of high resolution spectra wherequantification regions and components are used to calculate the area for the peaks. These data illustrate some of the issues associated with XPS quantification as the data includes singlet peaks in the form of O 1s, C 1s, Al 2s and N 1s; as well as doublet pairs: Cr 2p, Cu 2p, Ar 2p and Fe 2p. The spectra are sufficiently complex to involve overlaps such as the Al 2s and Cu 3s, while the Cu 2p 1/2peak includes signal from a Cr Auger line. When creating a table of percentage atomic concentrations it is important to select the correct RSF for the peak area chosen to measure the given element.Name R.S.F. % Conc. Cr 2p 1/2 10.6041 2.9 Cr 2p 3/2 10.6041 6.2 Fe 2p 1/2 14.8912 2.2 Fe 2p 3/2 14.8912 4.5 Cu 2p 3/2 15.0634 4.4 Al 2s Metal 0.753 61.4 Al 2s Ox 0.753 5.1 Ar 2p 2.65797 5.5O 1s 2.93 6.2 C1s 1 1.5 N1s1.8 0.2Table 1: Quantification table showing RSFs used to scale the raw peak areas.When measuring a transition, from the perspective of signal to noise, it is better to include both peaks from a doublet pair. For the data in Figure 20, the Fe 2p, Cr 2p and Ar 2p transitions are free ofinterference from other peaks and therefore simple integrationregions can be used to measure the peak areas. The Ar 2p doublet peaks overlap each other; however the Cr 2p and Fe 2p peaks do not overlap, thus separate quantification regions are used to measure the area for these resolved doublet peaks. Even though separate regions are used to estimate the peak areas for the two peaks in each of the Cr 2p and the Fe 2p transitions, total RSFs for these transitions are used to scale the raw area calculated from the regions. Similarly, the total RSF is used to scale the Ar 2p doublet peaks, because both peaks from the doublet are used in calculating the peak area for argon. On the other hand, since the Cu 2p 1/2 peak overlaps with the Cr LMM Auger transition, only the Cu 2p 3/2 peak can be used with ease and so the reduced RSF must be applied to scale the peak area. The quantification table in Table 1 lists the regions and components used to calculate the atomic concentrations together with the RSFs for each transition.Note the peak model used to measure the Al 2s includes acomponent representing the contribution of the Cu 3s transition to the Al 2s spectrum in Figure 20. Copper is measured using the Cu 2p 3/2 peak therefore the RSF for the Cu 3s component is set to zero so that the component does not appear in Table 1.By way of example, an alternative quantification regime might be to use only one of the two possible Fe 2p doublet peaks. The quantification in Table 2 removes the Fe 2p 1/2 region from the。

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addFolderIncludingChildFiles用法addFolderIncludingChildFiles是一个函数，用于将文件夹及其所有子文件夹和文件添加到指定的工程中。

它的语法如下：
matlab
addFolderIncludingChildFiles(proj, folder)
其中，proj是一个工程对象，folder是你希望添加的文件夹的路径。

当你调用这个函数时，它将遍历指定的文件夹及其所有子文件夹，并将这些文件夹中的文件添加到你的工程中。

这对于批量添加多个文件到工程中非常有用，尤其是当这些文件分散在多个子文件夹中时。

此外，addFolderIncludingChildFiles函数还有一个返回值。

当你使用如下方式调用它时：
matlab
newfile = addFolderIncludingChildFiles(proj, folder)
它将返回一个ProjectFile对象，这个对象代表了被添加的文件。

你可以使用这个对象来进一步操作或查询你添加到工程中的文件。

如果你只想添加指定的文件夹，而不希望添加其任何子文件夹和文件，你应该使用addFile函数，而不是addFolderIncludingChildFiles。

Using XPSPEAK Version 4.1 November 2000Contents Page Number XPS Peak Fitting Program for WIN95/98 XPSPEAK Version 4.1 (1)Program Installation (1)Introduction (1)First Version (1)Version 2.0 (1)Version 3.0 (1)Version 3.1 (2)Version 4.0 (2)Version 4.1 (2)Future Versions (2)General Information (from R. Kwok) (3)Using XPS Peak (3)Overview of Processing (3)Appearance (4)Opening Files (4)Opening a Kratos (*.des) text file (4)Opening Multiple Kratos (*.des) text files (5)Saving Files (6)Region Parameters (6)Loading Region Parameters (6)Saving Parameters (6)Available Backgrounds (6)Averaging (7)Shirley + Linear Background (7)Tougaard (8)Adding/Adjusting the Background (8)Adding/Adjusting Peaks (9)Peak Types: p, d and f (10)Peak Constraints (11)Peak Parameters (11)Peak Function (12)Region Shift (13)Optimisation (14)Print/Export (15)Export (15)Program Options (15)Compatibility (16)File I/O (16)Limitations (17)Cautions for Peak Fitting (17)Sample Files: (17)gaas.xps (17)Cu2p_bg.xps (18)Kratos.des (18)ASCII.prn (18)Other Files (18)XPS Peak Fitting Program for WIN95/98 XPSPEAKVersion 4.1Program InstallationXPS Peak is freeware. Please ask RCSMS lab staff for a copy of the zipped 3.3MB file, if you would like your own copyUnzip the XPSPEA4.ZIP file and run Setup.exe in Win 95 or Win 98.Note: I haven’t successfully installed XPSPEAK on Win 95 machines unless they have been running Windows 95c – CMH.IntroductionRaymond Kwok, the author of XPSPEAK had spent >1000 hours on XPS peak fitting when he was a graduate student. During that time, he dreamed of many features in the XPS peak fitting software that could help obtain more information from the XPS peaks and reduce processing time.Most of the information in this users guide has come directly from the readme.doc file, automatically installed with XPSPEAK4.1First VersionIn 1994, Dr Kwok wrote a program that converted the Kratos XPS spectral files to ASCII data. Once this program was finished, he found that the program could be easily converted to a peak fitting program. Then he added the dreamed features into the program, e.g.∙ A better way to locate a point at a noise baseline for the Shirley background calculations∙Combine the two peaks of 2p3/2 and 2p1/2∙Fit different XPS regions at the same timeVersion 2.0After the first version and Version 2.0, many people emailed Dr Kwok and gave additional suggestions. He also found other features that could be put into the program.Version 3.0The major change in Version 3.0 is the addition of Newton’s Method for optimisation∙Newton’s method can greatly reduce the optimisation time for multiple region peak fitting.Version 3.11. Removed all the run-time errors that were reported2. A Shirley + Linear background was added3. The Export to Clipboard function was added as requested by a user∙Some other minor graphical features were addedVersion 4.0Added:1. The asymmetrical peak function. See note below2. Three additional file formats for importing data∙ A few minor adjustmentsThe addition of the Asymmetrical Peak Function required the peak function to be changed from the Gaussian-Lorentzian product function to the Gaussian-Lorentzian sum function. Calculation of the asymmetrical function using the Gaussian-Lorentzian product function was too difficult to implement. The software of some instruments uses the sum function, while others use the product function, so both functions are available in XPSPEAK.See Peak Function, (Page 12) for details of how to set this up.Note:If the selection is the sum function, when the user opens a *.xps file that was optimised using the Gaussian-Lorentzian product function, you have to re-optimise the spectra using the Gaussian-Lorentzian sum function with a different %Gaussian-Lorentzian value.Version 4.1Version 4.1 has only two changes.1. In version 4.0, the printed characters were inverted, a problem that wasdue to Visual Basic. After about half year, a patch was received from Microsoft, and the problem was solved by simply recompiling the program2. The import of multiple region VAMAS file format was addedFuture VersionsThe author believes the program has some weakness in the background subtraction routines. Extensive literature examination will be required in order to revise them. Dr Kwok intends to do that for the next version.General Information (from R. Kwok)This version of the program was written in Visual Basic 6.0 and uses 32 bit processes. This is freeware. You may ask for the source program if you really want to. I hope this program will be useful for people without modern XPS software. I also hope that the new features in this program can be adopted by the XPS manufacturers in the later versions of their software.If you have any questions/suggestions, please send an email to me.Raymund W.M. KwokDepartment of ChemistryThe Chinese University of Hong KongShatin, Hong KongTel: (852)-2609-6261Fax:(852)-2603-5057email: rmkwok@.hkI would like to thank the comments and suggestions from many people. For the completion of Version 4.0, I would like to think Dr. Bernard J. Flinn for the routine of reading Leybold ascii format, Prof. Igor Bello and Kelvin Dickinson for providing me the VAMAS files VG systems, and my graduate students for testing the program. I hope I will add other features into the program in the near future.R Kwok.Using XPS PeakOverview of Processing1. Open Required Files∙See Opening Files (Page 4)2. Make sure background is there/suitable∙See Adding/Adjusting the Background, (Page 8)3. Add/adjust peaks as necessary∙See Adding/Adjusting Peaks, (Page 9), and Peak Parameters, (Page 11)4. Save file∙See Saving Files, (Page 6)5. Export if necessary∙See Print/Export, (Page 15)AppearanceXPSPEAK opens with two windows, one above the other, which look like this:∙The top window opens and displays the active scan, adds or adjusts a background, adds peaks, and loads and saves parameters.∙The lower window allows peak processing and re-opening and saving dataOpening FilesOpening a Kratos (*.des) text file1. Make sure your data files have been converted to text files. See the backof the Vision Software manual for details of how to do this. Remember, from the original experiment files, each region of each file will now be a separate file.2. From the Data menu of the upper window, choose Import (Kratos)∙Choose directory∙Double click on the file of interest∙The spectra open with all previous processing INCLUDEDOpening Multiple Kratos (*.des) text files∙You can open up a maximum of 10 files together.1. Open the first file as above∙Opens in the first region (1)2. In the XPS Peak Processing (lower) window, left click on 2(secondregion), which makes this region active3. Open the second file as in Step2, Opening a Kratos (*.des) text file,(Page 4)∙Opens in the second region (2)∙You can only have one description for all the files that are open. Edit with a click in the Description box4. Open further files by clicking on the next available region number thenfollowing the above step.∙You can only have one description for all the files that are open. Edit with a click in the Description boxDescriptionBox 2∙To open a file that has already been processed and saved using XPSPEAK, click on the Open XPS button in the lower window. Choose directory and file as normal∙The program can store all the peak information into a *.XPS file for later use. See below.Saving Files1. To save a file click on the Save XPS button in the lower window2. Choose Directory3. Type in a suitable file name4. Click OK∙Everything that is open will be saved in this file∙The program can also store/read the peak parameter files (*.RPA)so that you do not need to re-type all the parameters again for a similar spectrum.Region ParametersRegion Parameters are the boundaries or limits you have used to set up the background and peaks for your files. These values can be saved as a file of the type *.rpa.Note that these Region Parameters are completely different from the mathematical parameters described in Peak Parameters, (Page 11) Loading Region Parameters1. From the Parameters menu in the upper window, click on Load RegionParameters2. Choose directory and file name3. Click on Open buttonSaving Parameters1. From the Parameters menu in the XPS Peak Fit (Upper) window, clickon Save Region Parameters2. Choose directory and file name3. Click on the Save buttonAvailable BackgroundsThis program provides the background choices of∙Shirley∙Linear∙TougaardAveraging∙ Averaging at the end points of the background can reduce the time tofind a point at the middle of a noisy baseline∙ The program includes the choices of None (1 point), 3, 5, 7, and 9point average∙ This will average the intensities around the binding energy youselect.Shirley + Linear Background1. The Shirley + Linear background has been added for slopingbackgrounds∙ The "Shirley + Linear" background is the Shirley background plus astraight line with starting point at the low BE end-point and with a slope value∙ If the slope value is zero , the original Shirley calculation is used∙ If the slope value is positive , the straight line has higher values atthe high BE side, which can be used for spectra with higher background intensities at the high BE side∙ Similarly, a negative slope value can be used for a spectrum withlower background intensities at the high BE side2. The Optimization button may be used when the Shirley background is higher at some point than the signal intensities∙ The program will increase the slope value until the Shirleybackground is below the signal intensities∙ Please see the example below - Cu2p_bg.xps - which showsbackground subtraction using the Shirley method (This spectrum was sent to Dr Kwok by Dr. Roland Schlesinger).∙ A shows the problematic background when the Shirley backgroundis higher than the signal intensities. In the Shirley calculation routine, some negative values were generated and resulted in a non-monotonic increase background∙ B shows a "Shirley + Linear" background. The slope value was inputby trial-and-error until the background was lower than the signal intensities∙ C was obtained using the optimisation routineA slope = 0B slope = 11C slope = 15.17Note: The background subtraction calculation cannot completely remove the background signals. For quantitative studies, the best procedure is "consistency". See Future Versions, (Page 2).TougaardFor a Tougaard background, the program can optimise the B1 parameter by minimising the "square of the difference" of the intensities of ten data points in the high binding energy side of the range with the intensities of the calculated background.Adding/Adjusting the BackgroundNote: The Background MUST be correct before Peaks can be added. As with all backgrounds, the range needs to include as much of your peak as possible and as little of anything else as possible.1. Make sure the file of interest is open and the appropriate region is active2. Click on Background in the upper window∙The Region 0 box comes up, which contains the information about the background3. Adjust the following as necessary. See Note.∙High BE (This value needs to be within the range of your data) ∙Low BE (This value needs to be within the range of your data) NOTE: High and Low BE are not automatically within the range of your data. CHECK CAREFULLY THAT BOTH ENDS OF THE BACKGROUND ARE INSIDE THE EDGE OF YOUR DATA. Nothing will happen otherwise.∙No. of Ave. Pts at end-points. See Averaging, (Page 7)∙Background Type∙Note for Shirley + Linear:To perform the Shirley + Linear Optimisation routine:a) Have the file of interest openb) From the upper window, click on Backgroundc) In the resulting box, change or optimise the Shirley + LinearSlope as desired∙Using Optimize in the Shirley + Linear window can cause problems. Adjust manually if necessary3. Click on Accept when satisfiedAdding/Adjusting PeaksNote: The Background MUST be correct before peaks can be added. Nothing will happen otherwise. See previous section.∙To add a peak, from the Region Window, click on Add Peak ∙The peak window appears∙This may be adjusted as below using the Peak Window which will have opened automaticallyIn the XPS Peak Processing (lower) window, there will be a list of Regions, which are all the open files, and beside each of these will be numbers representing the synthetic peaks included in that region.Regions(files)SyntheticPeaks1. Click on a region number to activate that region∙The active region will be displayed in the upper window2. Click on a peak number to start adjusting the parameters for that peak.∙The Processing window for that peak will open3. Click off Fix to adjust the following using the maximum/minimum arrowkeys provided:∙Peak Type. (i.e. orbital – s, p, d, f)∙S.O.S (Δ eV between the two halves of the peak)∙Position∙FWHM∙Area∙%Lorenzian-Gaussian∙See the notes for explanations of how Asymmetry works.4. Click on Accept when satisfiedPeak Types: p, d and f.1. Each of these peaks combines the two splitting peaks2. The FWHM is the same for both the splitting peaks, e.g. a p-type peakwith FWHM=0.7eV is the combination of a p3/2 with FWHM at 0.7eV anda p1/2 with FWHM at 0.7eV, and with an area ratio of 2 to 13. If the theoretical area ratio is not true for the split peaks, the old way ofsetting two s-type peaks and adding the constraints should be used.∙The S.O.S. stands for spin orbital splitting.Note: The FWHM of the p, d or f peaks are the FWHM of the p3/2,d5/2 or f7/2, respectively. The FWHM of the combined peaks (e.g. combination of p3/2and p1/2) is shown in the actual FWHM in the Peak Parameter Window.Peak Constraints1. Each parameter can be referenced to the same type of parameter inother peaks. For example, for four peaks (Peak #0, 1, 2 and 3) with known relative peak positions (0.5eV between adjacent peaks), the following can be used∙Position: Peak 1 = Peak 0 + 0.5eV∙Position: Peak 2 = Peak 1 + 0.5eV∙Position: Peak 3 = Peak 2 + 0.5eV2. You may reference to any peak except with looped references.3. The optimisation of the %GL value is allowed in this program.∙ A suggestion to use this feature is to find a nice peak for a certain setting of your instrument and optimise the %GL for this peak.∙Fix the %GL in the later peak fitting process when the same instrument settings were used.4. This version also includes the setting of the upper and lower bounds foreach parameter.Peak ParametersThis program uses the following asymmetric Gaussian-Lorentzian sumThe program also uses the following symmetrical Gaussian-Lorentzian product functionPeak FunctionNote:If the selection is the sum function, when the user opens a *.xps file that was optimised using the Gaussian-Lorentzian product function, you have to re-optimise the spectra using the Gaussian-Lorentzian sum function with a different %Gaussian-Lorentzian value.∙You can choose the function type you want1. From the lower window, click on the Options button∙The peak parameters box comes up∙Select GL sum for the Gaussian-Lorentzian sum function∙Select GL product for the Gaussian-Lorentzian product function. 2. For the Gaussian-Lorentzian sum function, each peak can have sixparameters∙Peak Position∙Area∙FWHM∙%Gaussian-Lorentzian∙TS∙TLIf anyone knows what TS or TL might be, please let me know. Thanks, CMH3. Each peak in the Gaussian-Lorentzian product function can have fourparameters∙Peak Position∙Area∙FWHM∙%Gaussian-LorentzianSince peak area relates to the atomic concentration directly, we use it as a peak parameter and the peak height will not be shown to the user.Note:For asymmetric peaks, the FWHM only refers to the half of the peak that is symmetrical. The actual FWHM of the peak is calculated numerically and is shown after the actual FWHM in the Peak Parameter Window. If the asymmetric peak is a doublet (p, d or f type peak), the actual FWHM is the FWHM of the doublet.Region ShiftA Region Shift parameter was added under the Parameters menu∙Use this parameter to compensate for the charging effect, the fermi level shift or any change in the system work function∙This value will be added to all the peak positions in the region for fitting purposes.An example:∙ A polymer surface is positively charged and all the peaks are shifted to the high binding energy by +0.5eV, e.g. aliphatic carbon at 285.0eV shifts to 285.5eV∙When the Region Shift parameter is set to +0.5eV, 0.5eV will be added to all the peak positions in the region during peak fitting, but the listed peak positions are not changed, e.g. 285.0eV for aliphatic carbon. Note: I have tried this without any actual shift taking place. If someone finds out how to perform this operation, please let me know. Thanks, CMH.In the meantime, I suggest you do the shift before converting your files from the Vision Software format.OptimisationYou can optimise:1. A single peak parameter∙Use the Optimize button beside the parameter in the Peak Fitting window2. The peak (the peak position, area, FWHM, and the %GL if the "fix" box isnot ticked)∙Use the Optimize Peak button at the base of the Peak Fitting window3. A single region (all the parameters of all the peaks in that region if the"fix" box is not ticked)∙Use the Optimize Region menu (button) in the upper window4. All the regions∙Use the Optimize All button in the lower window∙During any type of optimisation, you can press the "Stop Fitting" button and the program will stop the process in the next cycle.Print/ExportIn the XPS Peak Fit or Region window, From the Data menu, choose Export or Print options as desiredExport∙The program can export the ASCII file of spectrum (*.DAT) for making high quality figures using other software (e.g. SigmaPlot)∙It can export the parameters (*.PAR) for further calculations (e.g. use Excel for atomic ratio calculations)∙It can also copy the spectral image to the system clipboard so that the spectral image can be pasted into a document (e.g. MS WORD). Program Options1. The %tolerance allows the optimisation routine to stop if the change inthe difference after one loop is less that the %tolerance2. The default setting of the optimisation is Newton's method∙This method requires a delta value for the optimisation calculations ∙You may need to change the value in some cases, but the existing setting is enough for most data.3. For the binary search method, it searches the best fit for each parameterin up to four levels of value ranges∙For example, for a peak position, in first level, it calculates the chi^2 when the peak position is changed by +2eV, +1.5eV, +1eV, +0.5eV,-0.5eV, -1eV, -1.5eV, and -2eV (range 2eV, step 0.5eV) ∙Then, it selects the position value that gives the lowest chi^2∙In the second level, it searches the best values in the range +0.4eV, +0.3eV, +0.2eV, +0.1eV, -0.1eV, -0.2eV, -0.3eV, and -0.4eV (range0.4eV, step 0.1eV)∙In the third level, it selects the best value in +0.09eV, +0.08eV, ...+0.01eV, -0.01eV, ...-0.09eV∙This will give the best value with two digits after decimal∙Level 4 is not used in the default setting∙The range setting and the number of levels in the option window can be changed if needed.4. The Newton's Method or Binary Search Method can be selected byclicking the "use" selection box of that method.5. The selection of the peak function is also in the Options window.6. The user can save/read the option parameters with the file extension*.opa∙The program reads the default.opa file at start up. Therefore, the user can customize the program options by saving the selectionsinto the default.opa file.CompatibilityThe program can read:∙Kratos text (*.des) files together with the peak fitting parameters in the file∙The ASCII files exported from Phi's Multiplex software∙The ASCII files of Leybold's software∙The VAMAS file format∙For the Phi, Leybold and VAMAS formats, multiple regions can be read∙For the Phi format, if the description contains a comma ",", the program will give an error. (If you get the error, you may use any texteditor to remove the comma)The program can also import ASCII files in the following format:Binding Energy Value 1 Intensity Value 1Binding Energy Value 2 Intensity Value 2etc etc∙The B.E. list must be in ascending or descending order, and the separation of adjacent B.E.s must be the same∙The file cannot have other lines before and after the data∙Sometimes, TAB may cause a reading error.File I/OThe file format of XPSPEAK 4.1 is different from XPSPEAK 3.1, 3.0 and 2.0 ∙XPSPEAK 4.1 can read the file format of XPSPEAK 3.1, 3.0 and 2.0, but not the reverse∙File format of 4.1 is the same as that of 4.0.LimitationsThis program limits the:∙Maximum number of points for each spectrum to 5000∙Maximum of peaks for all the regions to 51∙For each region, the maximum number of peaks is 10. Cautions for Peak FittingSome graduate students believe that the fitting parameters for the best fitted spectrum is the "final answer". This is definitely not true. Adding enough peaks can always fit a spectrum∙Peak fitting only assists the verification of a model∙The user must have a model in mind before adding peaks to the spectrum!Sample Files:gaas.xpsThis file contains 10 spectra1. Use Open XPS to retrieve the file. It includes ten regions∙1-4 for Ga 3d∙5-8 for Ga 3d∙9-10 for S 2p2. For the Ga 3d and As 3d, the peaks are d-type with s.o.s. = 0.3 and 0.9respectively3. Regions 4 and 8 are the sample just after S-treatment4. Other regions are after annealing5. Peak width of Ga 3d and As 3d are constrained to those in regions 1 and56. The fermi level shift of each region was determined using the As 3d5/2peak and the value was put into the "Region Shift" of each region7. Since the region shift takes into account the Fermi level shift, the peakpositions can be easily referenced for the same chemical components in different regions, i.e.∙Peak#1, 3, 5 of Ga 3d are set equal to Peak#0∙Peak#8, 9, 10 of As 3d are set equal to Peak#78. Note that the %GL value of the peaks is 27% using the GL sum functionin Version 4.0, while it is 80% using the GL product function in previous versions.18 Cu2p_bg.xpsThis spectrum was sent to me by Dr. Roland Schlesinger. It shows a background subtraction using the Shirley + Linear method∙See Shirley + Linear Background, (Page 7)Kratos.des∙This file shows a Kratos *.des file∙This is the format your files should be in if they have come from the Kratos instrument∙Use import Kratos to retrieve the file. See Opening Files, (Page 4)∙Note that the four peaks are all s-type∙You may delete peak 2, 4 and change the peak 1,3 to d-type with s.o.s. = 0.7. You may also read in the parameter file: as3d.rpa. ASCII.prn∙This shows an ASCII file∙Use import ASCII to retrieve the file∙It is a As 3d spectrum of GaAs∙In order to fit the spectrum, you need to first add the background and then add two d-type peaks with s.o.s.=0.7∙You may also read in the parameter file: as3d.rpa.Other Files(We don’t have an instrument that produces these files at Auckland University., but you may wish to look at them anyway. See the readme.doc file for more info.)1. Phi.asc2. Leybold.asc3. VAMAS.txt4. VAMASmult.txtHave Fun! July 1, 1999.。

Spartan-6 LX9 MicroBoard Embedded TutorialTutorial 2Adding EDK IP to an Embedded SystemVersion 12.4.01Revision HistoryTable of ContentsRevision History (2)Table of Contents (2)Table of Figures (2)Overview (3)Objectives (3)Requirements (4)Software (4)Hardware (4)Setup (4)Recommended Reading (4)I.Adding the New Peripheral (5)II.Writing Code for the New Peripheral (8)III.Test the Generated System with the New Application (13)Getting Help and Support (14)Table of FiguresFigure 1 - Hardware Platform (3)Figure 2 - IP Catalog (5)Figure 3 - GPIO Peripheral Configuration (5)Figure 4 - Connecting IP to PLB Bus (6)Figure 5 - Generate Addresses (6)Figure 6 - GPIO I/O Settings (7)Figure 7 - External Ports (7)Figure 8 - XPS GPIO Registers (8)Figure 9 - New C Project (9)Figure 10 - New Source File (10)Figure 11 - Generate Linker Script (11)Figure 12 - Connect LX9 MicroBoard to host PC (13)OverviewThis is the second tutorial in a series of training material dedicated to introducing engineers to creating their first embedded designs. These tutorials will cover all the required steps for creating a complete MicroBlaze design in the Spartan-6 LX9 MicroBoard. While dedicated to this platform, the information learned here can be used with any Xilinx FPGA.The tutorial is divided into three main steps: adding a new peripheral, writing code for the peripheral and testing the system on the board. The test application will reside in Block memory inside the FPGA. Below is a block diagram of the hardware platform. We will add a GPIO core to make use of the DIP Switches on the board.Figure 1 - Hardware PlatformObjectivesThis tutorial demonstrates how to add and modify peripherals to an existing MicroBlaze system using Xilinx Platform Studio (XPS). The system from the previous tutorial will be used as the starting point. The tutorial will showHow to add an EDK peripheralHow to connect to the existing systemHow to modify the peripheral optionsHow to add constraints for the new peripheralRequirementsThe following items are required for proper completion of this tutorial.Completion of the Creating an Embedded System TutorialSoftwareThe following software setup was used to test this reference design:▪WindowsXP 32-bit Service Pack 2▪Xilinx ISE WebPack with the SDK add-on or ISE Embedded Edition version 12.4▪Installed Digilent Adept and Xilinx 3rd-party USB Cable driver▪Installed Silicon Labs CP210x USB-to-UART Bridge Driver▪Installation of the Spartan-6 LX9 MicroBoard XBD filesHardwareThe hardware setup used by this reference design includes:▪Computer with a minimum of 300-900 MB (depending on O/S) to complete an XC6SLX9 design1▪Avnet Spartan-6 LX9 MicroBoard Kito Avnet Spartan-6 LX9 MicroBoardo USB Extension cable (if necessary)o USB A-to-MicroB cableSetup▪Install ISE Embedded Edition or ISE WebPack with the EDK add-on.▪Install Digilent Adept and Xilinx 3rd-party USB Cable driver (see Installation Guide on the DRC) Recommended ReadingAvailable from Avnet: /s6microboard▪The hardware used on the Spartan-6 LX9 MicroBoard is described in detail in Avnet document, Spartan-6 LX9 MicroBoard User Guide.▪An overview of the configuration options available on the Spartan-6 LX9 MicroBoard, as well as Digilent driver installation instructions can be found in the Avnet document, Spartan-6 LX9 MicroBoard Configuration Guide.▪Instructions on installing the Silicon Labs CP210x USB-to-UART drivers can be found in the Avnet document, Silicon Labs CP210x USB-to-UART Setup Guide.Available from Xilinx: /support/documentation/spartan-6.htm▪Details on the Spartan-6 FPGA family are included in the following Xilinx documents: o Spartan-6 Family Overview (DS160)o Spartan-6 FPGA Data Sheet (DS162)o Spartan-6 FPGA Configuration User Guide (UG380)o Platform Studio Help (available in tool menu)o Platform Studio SDK Help (available in tool menu)o MicroBlaze Reference Guide v.12.4 (UG081)o Embedded System Tools Reference Manual v.12.4 (UG111)1 Refer toI. Adding the New PeripheralWe will use Xilinx Platform Studio (XPS) to add and connect a new peripheral to the existing system.1) Start Project Navigator and open the Tutorial_01 project.2) Double-click on the mb_system module to open the system in XPS.3) Select the IP Catalog tab in the project window. The IP catalog lists all the processor peripheralsavailable with extended information. Expand the General Purpose IO option. The peripheralscan be sorted by column field. Right click on the peripheral to view its datasheet or change loginformation.Figure 2 - IP Catalog4) Select xps_gpio version 2.00.a on the list then drag and drop it to the System Assembly Viewwindow.5) The peripheral configuration window will open to configure the peripheral. Select Channel 1 andChange the GPIO Data Channel Width from 32 to 4. Change the Channel 1 is Input Only from FALSE to TRUE.Figure 3 - GPIO Peripheral Configuration6) Click OK.7) Click on xps_gpio_0 in the Name column of the System Assembly window. Rename the instanceto DIP_Switches. To connect the peripheral to the PLB bus, click on the circle on the left of the peripheral name. The circle means that it is a slave on the bus.Figure 4 - Connecting IP to PLB Bus8) Click on the Addresses tab. The addresses view shows the address space for all the peripherals.The Lock box prevents the address for that peripheral from being changed when generating new addresses.9) Click on the Generate Addresses button to generate the address range for the new GPIOperipheral.Figure 5 - Generate Addresses10) Click on the Ports tab. The Ports view shows the internal connections between the peripherals aswell as the external ports connections.11) Expand DIP_Switches from the list. It will show the connections available for the peripheral.12) Expand the (IO_IF) gpio_0 selection. Look at the GPIO datasheet for a description of each port.The datasheet can be found by right-clicking on DIP_Switches.13) Select GPIO_IO_I since the DIP switches are only inputs. Click on No Connection drop-downlist in the Net column. Select Make External to add it the external ports list.Figure 6 - GPIO I/O Settings14) Expand the External Ports to view the new connection. The name of the new external port isDIP_Switches_GPIO_IO_I_pin with a range of [0:3].Figure 7 - External Ports15) We need to update the design information for SDK. Go to Project > Export Hardware Design toSDK… Select Export Only.16) Close XPS.We need to update the constraint file to add the pinout information for the DIP switches.17) In Project Navigator, expand the mb_system module hierarchy view.18) Select the mb_system.ucf file, expand User Constraints in the Processes window and double-click on Edit Constraints (Text). In the UCF file add the lines:NET DIP_Switches_GPIO_IO_I_pin[0] LOC = "B3" | IOSTANDARD = "LVCMOS33";NET DIP_Switches_GPIO_IO_I_pin[1] LOC = "A3" | IOSTANDARD = "LVCMOS33";NET DIP_Switches_GPIO_IO_I_pin[2] LOC = "B4" | IOSTANDARD = "LVCMOS33";NET DIP_Switches_GPIO_IO_I_pin[3] LOC = "A4" | IOSTANDARD = "LVCMOS33";19) Save and close the UCF file.20) Select the mb_system module in the Hierarchy window.21) Double-Click on Generate Programming File to update the bit file with the new peripheral.II. Writing Code for the New PeripheralTo test the new peripheral we will create a new software application in Platform Studio SDK and use the GPIO device drivers.1) Start Xilinx SDK and select the Workspace from Tutorial_01.2) SDK will detect that the hardware system has changed. Click Yes to update the hardwareplatform and BSP.a. If SDK does not auto-detect the new hardware, right-click on the hardware platformproject and select Change Hardware Platform Specification. Browse to the XML fileand click OK.3) The peripheral datasheets and address map can be found under the hardware platform. Expandthe mb_system_hw_platform project and double-click on the system.xml file.4) Open the xps_gpio datasheet to view the GPIO register map. The GPIO Data Register is locatedat the base address of the peripheral, which is 0x81420000 for the DIP Switches.Figure 8 - XPS GPIO RegistersWe will create a new application to test the new peripheral.5) Go to File > New > Xilinx C Project.6) Name the project Tutorial_Test and select Empty Application from the project templates. ClickNext.Figure 9 - New C Project7) Select Target an Existing Board Support Package then click Finish.8) We need to add a source file for the new empty C project. Select the Tutorial_Test\src folderand go to File > New > Source File. Enter main.c for the file name. Click Finish.Figure 10 - New Source File9) Inside main.c, after the comments, add:#include "xparameters.h"#include "stdio.h"#include "xbasic_types.h"//====================================================int main (void) {print("-- Entering main() --\r\n");return 0;}10) Save the main.c file. The application will be compiled when saved. The Project menu givesoptions to change the behavior for building the application.11) Create a Linker Script for the new application. Right-click on the Tutorial_Test project and selectGenerate Linker Script. Select ilmb_cntlr_dlmb_cntlr for all the code sections to place them in the internal BRAMs. Click on Generate. Click Yes.Figure 11 - Generate Linker Script12) We will add code after the print statement to turn-on the LEDs when the DIP switches areasserted.13) On the left side expand the Standalone_BSP project. The BSP Documentation section containsthe documentation for the device drivers. The microblaze_0 folder contains the header files, compiled libraries, and sources for the Board Support Package.14) Expand microblaze_0 then expand the include directory.Double click on the xparameters.h fileto view the hardware parameters for the system. Using the macros will isolate the software from the actual hardware.15) Inside the expanded include directory for microblaze_0 are all the driver header files for thedifferent peripherals. The _l.h denotes a low level driver. Double-click on xgpio_l.h to view the GPIO low level functions.16) Click on XGpio_ReadReg in the Outline window to view the format to read the GPIO registers.We will also use the function XGpio_WriteReg to write to the LEDs. The Base Address for the device can be found in the xparameters.h file. The Data Register has an offset of 0x00.17) Write code into main.c to read from the DIP Switches GPIO channel 1:a. Include the low level driver header for the GPIO after the other include statements#include "xgpio_l.h"b. Declare a new global variable (u32 is defined in xbasic_types.h) before int main (void) {u32 DIP_Read;c. Add code to read from the DIP switches after the print statement:while (1) {DIP_Read = XGpio_ReadReg(XPAR_DIP_SWITCHES_BASEADDR, 0);}d. Add code to write the DIP switch value to the LEDs. Only add the WriteReg line insidethe while loop. The final while loop should look like this:while (1) {DIP_Read = XGpio_ReadReg(XPAR_DIP_SWITCHES_BASEADDR, 0);XGpio_WriteReg(XPAR_LEDS_4BITS_BASEADDR, 0, DIP_Read);}18) Save and close the file. The application will be compiled automatically.19) To view the changes made to main.c, right-click on main.c in the Project Explorer window andselect Compare > With Local History… Click OK when finished.The application is ready to be tested on the board.III. Test the Generated System with the New Application1) Plug the MicroBoard board into the PC.2) Plug the USB UART cable between the MicroBoard and the PC.Figure 12 - Connect LX9 MicroBoard to host PC3) In SDK, click on the Program FPGA icona. For the Bitstream, browse to the Tutorial_01 directory and select mb_system.bitb. For the BMM File, browse to the Tutorial_01 directory and select edkBmmFile_bd.bmmc. Click on Program.4) In the SDK Project Explorer View, right-click on the Tutorial_Test project and select Run As >Run Configurations…5) Select Xilinx C/C++ ELF and click on the New Launch Configuration icon6) In the SDK Run Configurations window, select the STDIO Connection tab.7) Check the Connect STDIO to Console box.a. Select the COM port for the USB UART and leave the BAUD Rate at 9600.b. Click on Run.8) Carefully modify the DIP switches positions to turn the LEDs on and off.9) Close SDK. This concludes Tutorial #2.Getting Help and SupportEvaluation Kit home page with Documentation and Reference Designs/s6microboardAvnet Spartan-6 LX9 MicroBoard forum:/t5/Spartan-6-LX9-MicroBoard/bd-p/Spartan-6LX9MicroBoardFor Xilinx technical support, you may contact your local Avnet/Silica FAE or Xilinx Online Technical Support at . On this site you will also find the following resources for assistance:Software, IP, and Documentation UpdatesAccess to Technical Support Web ToolsSearchable Answer Database with Over 4,000 SolutionsUser ForumsTraining - Select instructor-led classes and recorded e-learning optionsContact Avnet Support for any questions regarding the Spartan-6 LX9 MicroBoard reference designs, kit hardware, or if you are interested in designing any of the kit devices into your next design./techsupportYou can also contact your local Avnet/Silica FAE.。