BTA06-800TWRG中文资料

Absolute Maximum Ratings ( T J = 25°C unless otherwise specified )SymbolParameterCondition RatingsUnitsV DRM Repetitive Peak Off-State Voltage 600 V I T(RMS)R.M.S On-State Current T C = 94 °C6.0A I TSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive60/66A I 2t I 2t18A 2s PGM Peak Gate Power Dissipation 3.0W P G(AV)Average Gate Power Dissipation 0.3W I GM Peak Gate Current 2.0A V GM Peak Gate Voltage10V V ISO Isolation Breakdown Voltage(R.M.S.) A.C. 1 minute 1500V T J Operating Junction Temperature - 40 ~ 125°C T STGStorage Temperature - 40 ~ 150°C Mass2.0gMar, 2004. Rev. 0Features◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( I T(RMS)= 6 A )◆ High Commutation dv/dt◆ Isolation Voltage ( V ISO = 1500V AC )General DescriptionThis device is fully isolated package suitable for AC switchingapplication, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.This device is approved to comply with applicable require-ments by Underwriters Laboratories Inc.2.T23.Gate1.T1Symbol○○○▼▲1/6BTA06-600BSemiWell SemiconductorBi-Directional Triode Thyristorcopyright@SemiWell Semiconductor Co., Ltd., All rights reserved.UL : E228720PreliminaryElectrical CharacteristicsSymbol Items ConditionsRatingsUnit Min.Typ.Max.I DRM Repetitive Peak Off-StateCurrentV D = V DRM, Single Phase, Half WaveT J = 125 °C──1.0mAV TM Peak On-State Voltage I T = 8 A, Inst. Measurement── 1.5VI+GT1ⅠGate Trigger Current V D = 6 V, R L=10Ω──20mAI-GT1Ⅱ──20 I-GT3Ⅲ──20V+GT1ⅠGate Trigger Voltage V D = 6 V, R L=10Ω── 1.5VV-GT1Ⅱ── 1.5V-GT3Ⅲ── 1.5V GD Non-Trigger Gate Voltage T J = 125 °C, V D = 1/2 V DRM0.2──V(dv/dt)c Critical Rate of Rise Off-StateVoltage at CommutationT J = 125 °C, [di/dt]c = -3.0 A/ms,V D=2/3 V DRM5.0──V/㎲I H Holding Current─10─mAR th(j-c)Thermal Impedance Junction to case── 3.8°C/W BTA06-600B2/6Fig 4. On State Current vs.BTA06-600B4/6Fig 9. Gate Trigger Characteristics Test CircuitGGGTest Procedure ⅠTest Procedure ⅡTest Procedure ⅢBTA06-600BDim.mm Inch Min.Typ.Max.Min.Typ.Max.A 10.410.60.4090.417B 6.18 6.440.2430.254C 9.559.810.3760.386D 13.4713.730.5300.540E 6.05 6.150.2380.242F 1.26 1.360.0500.054G 3.17 3.430.1250.135H 1.87 2.130.0740.084I 2.57 2.830.1010.111J 2.540.100K 5.080.200L 2.51 2.620.0990.103M 1.25 1.550.0490.061N 0.450.630.0180.025O0.61.00.0240.039φ 3.70.146φ1 3.20.126φ21.50.059TO-220F Package Dimension5/6BTA06-600BDim.mm InchMin.Typ.Max.Min.Typ.Max.A10.410.60.4090.417B 6.18 6.440.2430.254C9.559.810.3760.386D8.48.660.3310.341E 6.05 6.150.2380.242F 1.26 1.360.0500.054G 3.17 3.430.1250.135H 1.87 2.130.0740.084I 2.57 2.830.1010.111J 2.540.100K 5.080.200L 2.51 2.620.0990.103M 1.25 1.550.0490.061N0.450.630.0180.025O0.6 1.00.0240.039P 5.00.197φ 3.70.146φ1 3.20.126φ2 1.50.059TO-220F Package Dimension, Forming6/6BTA06-600B。

®1/9Table 1: Main FeaturesDESCRIPTIONAvailable either in through-hole or surface-mount packages, the BTA16, BTB16 and T16 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applica-tions such as static relays, heating regulation, in-duction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ...The snubberless versions (BTA/BTB...W and T16series) are specially recommended for use on in-ductive loads, thanks to their high commutation performances. By using an internal ceramic pad,the BTA series provides voltage insulated tab (rat-ed at 2500V RMS ) complying with UL standards (File ref.: E81734).Symbol Value Unit I T(RMS)16A V DRM /V RRM 600, 700 and 800V I GT (Q 1)10 to 50mABTA16, BTB16 and T16 Series16A TRIAC SREV. 7February 2006SNUBBERLESS™, LOGIC LEVEL & STANDARDTable 2: Order CodesPart Number Marking BTA16-xxxxxRG See page table 8 onpage 8BTB16-xxxxxRG T16xx-xxxGBTA16, BTB16 and T16 Series2/9Table 3: Absolute Maximum Ratings Tables 4: Electrical Characteristics (T j = 25°C, unless otherwise specified)■SNUBBERLESS and Logic Level (3 quadrants)Symbol ParameterValue Unit I T(RMS)RMS on-state current (full sine wave)D 2PAK /TO-220AB T c = 100°C 16ATO-220AB Ins.T c = 15°C I TSM Non repetitive surge peak on-state current (full cycle, T j initial = 25°C) F = 50 Hz t = 20 ms 160A F = 60 Hz t = 16.7 ms168I ²t I ²t Value for fusingt p = 10 ms 144A ²s dI/dtCritical rate of rise of on-state cur-rent I G = 2 x I GT , t r ≤ 100 nsF = 120 HzT j = 125°C 50A/µs V DSM /V RSM Non repetitive surge peak off-state voltaget p = 10 msT j = 25°C V DSM /V RSM + 100V I GM Peak gate currentt p = 20 µsT j = 125°C 4A P G(AV)Average gate power dissipation T j = 125°C1W T stg T jStorage junction temperature range Operating junction temperature range- 40 to + 150- 40 to + 125°CSymbol Test ConditionsQuadrant T16BTA16 / BTB16Unit T1635SW CW BW I GT (1)V D = 12 V R L = 33 ΩI - II - III MAX.35103550mA V GT I - II - III MAX. 1.3V V GD V D = V DRM R L = 3.3 k ΩT j = 125°C I - II - IIIMIN.0.2V I H (2)I T = 500 mA MAX.35153550mA I L I G = 1.2 I GTI - III MAX.50255070mA II60306080dV/dt (2)V D = 67 %V DRM gate open T j = 125°C MIN.500405001000V/µs(dI/dt)c (2)(dV/dt)c = 0.1 V/µsT j = 125°C MIN.-8.5--A/ms(dV/dt)c = 10 V/µsT j = 125°C - 3.0--Without snubberT j = 125°C8.5-8.514BTA16, BTB16 and T16 Series3/9■Standard (4 quadrants)Table 5: Static Characteristics Table 6: Thermal resistance Symbol Test ConditionsQuadrant BTA16 / BTB16Unit C B I GT (1)V D = 12 V R L = 33 ΩI - II - III IV MAX.255050100mA V GT ALL MAX. 1.3V V GD V D = V DRM R L = 3.3 k Ω T j = 125°C ALLMIN.0.2V I H (2)I T = 500 mA MAX.2550mA I L I G = 1.2 I GTI - III - IVMAX.4060mA II 80120dV/dt (2)V D = 67 %V DRM gate openT j = 125°C MIN.200400V/µs (dV/dt)c (2)(dI/dt)c = 7 A/ms T j = 125°CMIN.510V/µsSymbol Test ConditionsValue Unit V T (2)I TM = 22.5 A t p = 380 µs T j = 25°C MAX. 1.55V V to (2)Threshold voltage T j = 125°C MAX.0.85V R d (2)Dynamic resistance T j = 125°C MAX.25m ΩI DRM I RRMV DRM = V RRMT j = 25°C MAX.5µA T j = 125°C2mANote 1: minimum I GT is guaranted at 5% of I GT max.Note 2: for both polarities of A2 referenced to A1.Symbol ParameterValue Unit R th(j-c)Junction to case (AC)D 2PAK / TO-220AB 1.2°C/WTO-220AB Insulated 2.1R th(j-a)Junction to ambient S = 1 cm ²D 2PAK45°C/WTO-220AB / TO-220AB Insulated60S = Copper surface under tab.BTA16, BTB16 and T16 Series4/9Figure 1: Maximum power dissipation versus RMS on-state current (full cycle)Figure 2: RMS on-state current versus case temperature (full cycle)Figure 3: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle)Figure 4: Relative variation of thermal impedance versus pulse durationFigure 5: On-state characteristics (maximum values)Figure 6: Surge peak on-state current versus number of cyclesBTA16, BTB16 and T16 Series5/9Figure 7: Non-repetitive surge peak on-state current for a sinusoidal pulse with width t p < 10 ms and corresponding value of I 2tFigure 8: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values)Figure 9: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (Snubberless & L ogic level types)Figure 10: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (Standard types)Figure 11: D 2P AK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm)BTA16, BTB16 and T16 Series6/9Figure 12: Ordering Information Scheme (BTA16 and BTB16 series)Figure 13: Ordering Information Scheme (T16 series)Table 7: Product SelectorPart Numbers Voltage (xxx)Sensitivity Type Package 600 V 700 V 800 V BTA/BTB16-xxxB X X X 50 mA Standard TO-220AB BTA/BTB16-xxxBW X X X 50 mA Snubberless TO-220AB BTA/BTB16-xxxCX X X 25 mA Standard TO-220AB BTA/BTB16-xxxCW X X X 35 mA Snubberless TO-220AB BTA/BTB16-xxxSW X XX 10 mA Logic level TO-220ABT1635-xxxGXX35 mASnubberlessD 2PAKBTB: non insulated TO-220AB packageBTA16, BTB16 and T16 Series Figure 14: D2PAK Package Mechanical DataFigure 15: D2PAK Foot Print Dimensions(in millimeters)7/9BTA16, BTB16 and T16 Series8/9In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: .Table 8: Ordering InformationOrdering type Marking Package Weight Base qtyDelivery modeBTA/BTB16-xxxyzRGBTA/BTB16xxxyz TO-220AB 2.3 g 50Tube T1635-xxxG T1635xxxG D 2PAK1.5 g50Tube T1635-xxxG-TRT1635xxxG1000Tape & reelNote: xxx = voltage, yy = sensitivity, z = typeTable 9: Revision HistoryDate Revision Description of ChangesOct-20026A Last update.13-Feb-20067TO-220AB delivery mode changed from bulk to tube.ECOPACK statement added.BTA16, BTB16 and T16 Series Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics.All other names are the property of their respective owners© 2006 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America9/9万联芯城-电子元器件采购网，提供一站式配套，解决物料烦恼，万联芯城是国内优质的电子元器件供应商，货源渠道来自原厂及代理商，只售原装现货，只需提交BOM物料清单，我们将为您报出一个满意的价格，解决客户采购烦恼，为客户节省采购成本，点击进入万联芯城。

BT SeriesGiant BinocularsBT-70SF - BT-82SF - BT-100SF - BT-120SF Art. No. 0114200 / 0114210 / 0114220 / 0114230U-Mount with tripodArt. No. 0114300 INSTRUCTION MANUALGiant binoculars2x 62° LER eyepiece20mm ArTripodwith spacing plate and central screwU-Mountwith mounting plateand tripod head adapterTripodU-Mount11. F riction wheelsfor height adjustment 12. Movable height cradle 13. Fork arm14. Adapter plate for 15.15. 1/4" threaded screws 16. Dovetail rail 17. F ixing screws for 16.18. Turnable azimuthal axis 19. Fixing screw for 18.20. Mounting head21. Tripod head adapter1. Tripod head2. Tripod leg (upper part)3. Fixing screws for tripod leg4. Tripod leg (lower part)5. Spindle crank6. K nurled screw7. Central screw8. Spacing plate9. Washer 10. C-Clip21. Objective Lens 22. Dew/sun protection cap, extendable 23. Tube24. ¼" Connection thread 25. ⅜"-Connection thread* with unscrewable¼“ Connection thread adapter26. Transport handle27. Eyepiece, exchangeable 28. Eyepiece holder29. Eyepiece clamping ring 30. Focusing31. Interpupillary distance adjustmentGiant binoculars * for mounting on photo tripods with corresponding mounting head. ¼" connection thread can be unscrewed using a slotted screwdriver, thus exposing a "⅜"connection thread.When mounting the binoculars on a photo tripod with appropriate mounting head, make sure that the photo tripod and the mountinghead have sufficient load-bearing capacity!plate in the tripod head and fix it.adapter and the tripod. Tighten the tripod legs with the knurled screw.2. A ssemble spacing plate and central screw.6. F riction adjustment of the coupling for the height axis.them.tripod head. Place the U-Mount on the tripod head adapter.7. F riction adjustment of the coupling for the azimuth axis.bottom side of the binoculars.handle and tighten the fixing screws.guide of the U-Mount.12. B alance the binoculars at the centreof gravity.8. 2 x ¼" connection thread on the bottom side of the binocularsobservation. Possibly pull out theeyepiece holder.focusing.14. R emove the dust caps from theobjective lenses.Astronomical observations48Land observations48Tips on observationMoon*Star cluster M45 Pleiades*Orion nebula M42*Landscape*Birds*Ships** Sample images for illustration purposes. The actual image size and image quality depends on the selected eyepieces. Astronomical motifs are usually not visible in colour due to the long observation distance.EXPLORE SCIENTIFIC Eyepiece series EXPLORE SCIENTIFIC TELRADProjection viewfinder with baseEXPLORE SCIENTIFIC Nebula filters EXPLORE SCIENTIFIC Filter Set 2When using optional accessories, read separate instruction manual!Only use accessories authorized by the manufacturer!11Giant binoculars Product (Art. No.)Objective lens typeAperture (mm)Focal length (mm)Dimensions(LxWxH) (mm)Weight (kg)BT-70SF (0114200)achromatic (2 elem./1 gr.)70400370x213x122 3.4BT-82SF (0114210)achromatic (2 elem./1 gr.)82470445x226x122 4.3BT-100SF (0114220)achromatic (2 elem./1 gr.)100550520x270x155 6.8BT-120SF (0114230)achromatic (2 elem./1 gr.)120660654x290x1568.3Giant binoculars• C lean the lenses (eyepieces and/or objective lenses) only with a soft and lint-free cloth (e.g. microfibre cloth). To avoid scratching the lenses, use only gentle pressure with the cleaning cloth.• T o remove more stubborn dirt, moisten the cleaning cloth with an eyeglass-cleaning solution and wipe the lenses gently.• P rotect the device from dust and moisture! After use, particularly in high humidity, let the device acclimatise at room temperature for a short period of time, so that the residual moisture can dissipate. Put the dust caps on and store it in a dry and heated place.U-Mount and tripod• Clean the device only on the outside with a dry cloth.Bresser GmbHGutenbergstr. 2 · DE-46414 RhedeGermanywww.bresser.de·******************Errors and technical changes excepted.Manual_0114200-0114210-0114220-0114230-0114300_BT-Series-U-Mount_en_EXPSC_062021a。

PureProteome Protein A and Protein G magnetic beads are a powerful system toisolate antibodies faster, easier, and with more reproducibility then ever before. PureProteome Protein A and Protein G magnetic beads purify your sample with the highest binding capacity of any magnetic beads available. You can achieve reproducible results in both immunoprecipitation and serum depletion assays.PureProteome ™ Protein A and Protein G Magnetic BeadsEliminate Variability. Maximize Recovery.AdvantagesHigh capacity: More than 6x the • binding capacity of competitive magnetic beads.Bind 1.5-3.5 µg of rabbit IgG –per µL of suspensionConsistent results: Total removal • of buffers with no sample loss Fast processing time: Bead • immobilization occurs in seconds Ideal for immunoprecipitation and • serum depletion assaysEconomical: Up to half the price of • competitive magnetic beads2Rabbit Serum (50 µL) diluted with PBS was incubated withProtein G magnetic beads per manufacturer’s instructions. Thedepleted rabbit serum samples were separated by SDS-PAGEand the gel stained with Coomassie Blue using Millipore andcompetitor magnetic beads. Lane 1: input material, lanes 2, 4, 6,8: depleted samples, lanes 3, 5, 7, 9: eluted samples.A whole-cell lysate (300 mg of protein in 500 µL) preparedfrom A431 cells was incubated in the presence of 5 µg of amouse monoclonal antibody specific for the tumor suppressorprotein/transcription factor p53 for 2 hours at 4 °C withgentle mixing. The antigen-antibody complexes were thenincubated for 10 minutes at room temperature with 50 µL ofpre-washed PureProteome Protein A magnetic beads followedby washes with PBS to remove any unbound protein. Theimmunoprecipitated p53 protein was eluted from the beadsby incubation in the presence of gel loading buffer for 10minutes at 70 °C. Ten microliter samples of the cell lysatestarting material (S), cell lysate that had been incubated in thepresence of the PureProteome magnetic beads (FT) and thep53-containing eluted fraction (E) were subjected to SDS-PAGE and western blot analysis using Immobilon-P blottingmembrane. The immunoreactive p53 protein was visualizedusing the SNAP i.d.™ Protein Detection System (antibodies:rabbit anti-p53, HRP-conjugated goat anti-rabbit) and ImmobilonHRP Western Substrate. The results shown demonstratequantitative precipitation of the p53 protein from the samples. HigH BinDing CApACitywitH RApiD SAMplE pRoCESSingTrust Millipore to develop a superior magnetic bead systemoptimized to advance your research. Millipore’s process forparamagnetizing porous silica particles enables us to providemagnetic beads with the highest binding capacity whencompared to other magnetic purification systems.With a binding capacity 6x greater then competitive beads,PureProteome Protein A and Protein G magnetic beadsprovide the greatest percentage of immunoglobulin (IgG)depletion from serum samples with low non-specific binding.get up to 8X greater depletion in half the time. Superior magnetic bead performancefrom the experts in porous media3CoMplEtE RECoVERy witH REpRoDuCiBlE RESultSMillipore’s new PureProteome magnetic beads ensure the rapid and reproducible isolation of proteins. Unlike conventional methods that require centrifugation to pellet followed by careful aspiration to avoid sample loss, PureProteome magnetic beads are isolated using a magnetic rack. This allows for the total removal of buffers for complete recovery of beads with no sample dilution.Eliminate variabilitywhile maximizing recovery.FASt AnD EASyWhile traditional methods require minutes of harsh centrifuga-tion to isolate your sample, the PureProteome magnetic bead system isolates proteins in seconds using a magnetic rack right on your bench. A magnetic field gently immobilizes the highly-visible beads on the side of the tube. This allows quick and easy aspiration and eliminates the need for a centrifugation step. With the increased reaction kinetics of the Pure Proteome magnetic beads, incubations can be performed in minutes.Immunoprecipitation reactions that may require up to 18 hours of incubation with beads using conventional methods can now be accomplished in as little as 10 minutes.Dramatically reduce your sample preparation time with pureproteome magnetic beads.oRDERing inFoRMAtionDescription Qty/pk Catalogue no. PureProteome Magnetic BeadsPureProteome Protein A Magnetic Beads10 mL2 x 1 mLLSKMAGA10LSKMAGA02PureProteome Protein G Magnetic Beads10 mL2 x 1 mLLSKMAGG10LSKMAGG02Pure Proteome Nickel Magnetic Beads10 mL2 x 1 mLLSKMAGH10LSKMAGH02Magna GrIP™ Rack20-400Description nMwl*Qty/pk Catalogue no. Protein Concentration (< 4 mL samples)Amicon® Ultra-4Centrifugal Filter Unit withUltracel®-3 membrane324UFC800324Amicon Ultra-4 CentrifugalFilter Unit with Ultracel-10membrane1024UFC801024Amicon Ultra-4 CentrifugalFilter Unit with Ultracel-30membrane3024UFC803024Amicon Ultra-4 CentrifugalFilter Unit with Ultracel-50membrane5024UFC805024Amicon Ultra-4 CentrifugalFilter Unit with Ultracel-100membrane10024UFC810024 * Nominal Molecular Weight Limit or membrane cut-off in kDaDescription Qty/pk Catalogue no. Western BlottingSNAP i.d.™ Protein Detection SystemIncludes hardware base, blot holdersample pack, blot roller, vacuum tubinguser guide.1 kit WBAVDBASEDescription Size Qty/pk Catalogue no. Immobilon®-P Transfer membrane (0.45 µm)Cut Sheet8 x 10 cm10IPVH0810010 x 10 cm10IPVH1010020 x 20 cm10IPVH20200 Roll26.5 x 375 cm1IPVH00010 Immobilon-PSQ Transfer membrane (0.2 µm)Cut Sheet8 x 10 cm10ISEQ0810010 x 10 cm10ISEQ1010020 x 20 cm10ISEQ20200 Roll26.5 x 375 cm 1 ISEQ00010 Immobilon-FL Transfer membrane (0.45 µm)Cut Sheet10 x 10 cm 10 IPFL10100 Roll26.5 x 3.75 cm 1 IPFL00010 Blotting SandwichesImmobilon-PBlotting Sandwich7 x 8.4 cm 20 IPSN078528.5 x 13 cm 20 IPSN08132 Description Qty/pk Catalogue no. Western Blot Detection SubstratesImmobilon WesternChemiluminescent HRP Substrate100 mL WBKLS0100Immobilon WesternChemiluminescent AP Substrate100 mL WBKDS0100Spray & Glow™ ECL Western BlottingDetection System100 mL17-373 Visit for additional pack sizes/offices to plACE An oRDER oR RECEiVE tECHniCAl ASSiStAnCEVisit: /supportMillipore, Ultracel, Immobilon, and Amicon are registered trademarks of Millipore Corporation. The M mark, Advancing Life Science Together, PureProteome, Magna GrIP, SNAP i.d., and Spray & Glow are trademarks of Millipore Corporation.Lit. No. DS1060EN00 11/08 BP-GEN-08-01172Printed in the U.S.A.© 2008 Millipore Corporation, Billerica, MA 01821 U.S.A. All rights reserved.。

OptowayBTR-7620G**********************************************************************************************************************************************************************************************************************************************************************************************************************************************OPTOWAY TECHNOLOGY INC. No .38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303Tel: 886-3-5979798 Fax: 886-3-5979737E-mail: sales@ http: // 10/1/2005 V2.01BTR-7620G / BTR-7620-SPG / BTR-7620AG / BTR-7620A-SPG1310 nm TX / 1550 nm RX , 3.3V / 1.25 Gb/s RoHS Compliant Single-Fiber Transceiver**********************************************************************************************************************************************************************FEATURESl Single Fiber Bi-Directional Transceiver l 1310 nm LD Transmitter l 1550 nm Receiverl 14 dB Link Power Budget At Least l Link distance up to 20 kml Industry Standard 1 x 9 Footprint l Single +3.3 V Power Supply l RoHS Compliantl 0 to 70o C Operating: BTR-7620G l -20 to 85o C Operating: BTR-7620AG l LVPECL Differential Inputs and Outputs l LVPECL Signal Detect Output: BTR-7620G l LVTTL Signal Detect Output: BTR-7620CG l Wave Solderable and Aqueous Washablel Class 1 Laser International Safety Standard IEC-60825 CompliantAPPLICATIONSl WDM 1.25 Gb/s Linksl SONET/SDH Equipment Interconnect l Fibre Channel 1.063 Gb/s LinksDESCRIPTIONThe BTR-7620G series is high performance module for single fiber communications by using 1310 nm transmitter and 1550 nm receiver. The transmitter section uses a multiple quantum well laser and is a class 1 laser compliant according to International Safety Standard IEC-60825. The receiver section uses an integrated 1550 nm detector preamplifier (IDP) mounted in an optical header and a limiting post-amplifier IC. A PECL logic interface simplifies interface to external circuitry.LASER SAFETYThis single mode transceiver is a Class 1 laser product. It complies with IEC-60825 and FDA 21 CFR 1040.10 and 1040.11. The transceiver must be operated within the specified temperature and voltage limits. The optical ports of the module shall be terminated with an optical connector or with a dust plug.ORDER INFORMATIONP/No.Bit Rate (Gb/s) Distance (km) TX (nm) RX (nm) Voltage (V) Package Temp (o C) TX Power (dBm) RX Sens. (dBm) Signal Detect RoHS CompliantBTR-7620CG 1.25 20 1310 1550 3.3 1X9 0 to 70 -3 to -8 -22 TTL Yes BTR-7620ACG 1.25 20 1310 1550 3.3 1X9 -20 to 85 -3 to -8 -22 TTL Yes BTR-7620G 1.25 20 1310 1550 3.3 1X9 0 to 70 -3 to -8 -22 PECL Yes BTR-7620AG1.2520131015503.31X9-20 to 85-3 to -8-22PECLYesNote: 1. BTR-XXXXXG is 1X9 SC receptacle type package.2. BTR-XXXXX-APBBBG is 1X9 pigtail type package with different connector, A=S is SC connector, A=F is FCconnector, A=T is ST connector, A=L is LC connector, A=M is MU connector; BBB is the length of fiber in cm.***********************************************************************************************************************************************************************OPTOWAY TECHNOLOGY INC. No .38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303Tel: 886-3-5979798 Fax: 886-3-5979737Absolute Maximum RatingsParameterSymbolMin Max Units NotesStorage Temperature Tstg -40 85 o COperating Temperature Topr 0 -20 70 85 o CBTR-7620G BTR-7620AGSoldering Temperature --- 260 oC 10 seconds on leads only Power Supply Voltage Vcc 0 4.5 V Input Voltage --- GND Vcc VOutput CurrentIout30mARecommended Operating ConditionsParameterSymbol Min Typ Max Units Power Supply Voltage Vcc 3.13 3.3 3.47 V Operating Temperature Topr 0 -20 70 85 oC / BTR-7620G oC / BTR-7620AGData Rate1250 1300 Mb/s Power Supply CurrentIcc260mATransmitter Specifications (0o C < Topr < 70o C, 3.13V < Vcc < 3.47V)ParameterSymbolMinTyp Max Units Notes OpticalOptical Transmit Power Po -8--- -3 dBm 1Output Center Wavelength λ1280 1350 nmOutput Spectrum Width ∆λ--- --- 2.0 nm RMS (σ) Extinction Ratio E R 9.0 --- --- dBOutput EyeCompliant with IEEE 802.3zOptical Rise Time t r 0.26 ns 20% to 80% Values Optical Fall Timet f 0.26 ns 20% to 80% Values Relative Intensity Noise RIN -120 dB/HzTotal Jitter TJ 0.227 ns 2 ElectricalData Input Current – Low I IL -350 µA Data Input Current – High I IH 350 µA Differential Input Voltage V IH - V IL 300 mVData Input Voltage – Low V IL - V CC -2.0 -1.58 V 3 Data Input Voltage -- HighV IH - V CC-1.1-0.74V3Notes: 1. Output power is power coupled into a 9/125 µm single mode fiber.2. Measured with a 27-1 PRBS.3. These inputs are compatible with 10K, 10KH and 100K ECL and LVPECL inputs.***********************************************************************************************************************************************************************OPTOWAY TECHNOLOGY INC. No .38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303Tel: 886-3-5979798 Fax: 886-3-5979737Receiver Specifications (0o C < Topr < 70o C, 3.135 V < Vcc < 3. 47V)ParameterSymbol Min Typ Max Units Notes Optical Sensitivity------ --- -22 dBm 1Maximum Input Power Pin -3 --- dBmSignal Detect -- Asserted Pa --- --- -22 dBm Transition: low to high Signal Detect -- Deasserted Pd -31 --- --- dBm Transition: high to low Signal detect -- Hysteresis 1.0 --- dBWavelength of Operation 1480 1580 nm 2 Optical Return Loss ORL 14 dBElectricalData Output Voltage – Low V OL - V CC -2.0 -1.58 V 3 Data Output Voltage – High V OH - V CC -1.1 -0.74 V 3SD Output Voltage -- Low V OL - V CC -2.0 -1.58 V SD Output Voltage -- High V OH - V CC -1.1 -0.74 V BTR-7620G SD Output Voltage -- Low V OL 0 0.8 V SD Output Voltage -- HighV OH2.0Vcc+0.3VBTR-7620CGNotes: 1. Minimum sensitivity and saturation levels at BER=1E-12 for a 27-1 PRBS.2. At least 30 dB optical isolation for the wavelength 1260 to 1360 nm.3. These outputs are compatible with 10K, 10KH and 100K ECL and LVPECL outputs.CONNECTION DIAGRAMReceiver Signal Ground 1 (Rx GND)Receiver Data Out 2 (RD+) N/C Receiver Data Out Bar 3 (RD −) Signal Detect 4 (SD)Receiver Power Supply 5 (Rx Vcc) TOP VIEW Transmitter Power Supply 6 (Tx Vcc) Transmitter Data In Bar 7 (TD −)Transmitter Data In 8 (TD+) N/C Transmitter Signal Ground 9 (Tx GND)PIN Symbol Notes1 Rx GND Directly connect this pin to the receiver ground plane2 RD+ See recommended circuit schematic3 RD − See recommended circuit schematic4 SD Active high on this indicates a received optical signal5 Rx Vcc +3.3V dc power for the receiver section6 Tx Vcc +3.3V dc power for the transmitter section7 TD − See recommended circuit schematic8 TD+ See recommended circuit schematic9Tx GNDDirectly connect this plan to the trransmitter ground plane*********************************************************************************************************************************************************************** OPTOWAY TECHNOLOGY INC. No.38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303Tel: 886-3-5979798 Fax: 886-3-5979737。

1/9®BTA/BTB24,BTA25,BTA26and T25SeriesSNUBBERLESS ™&STANDARD25A TRIAC SSeptember 2000-Ed:3MAIN FEATURES:DESCRIPTIONAvailable either in through-hole of surface and T25mount packages,the BTA/BTB24-25-26triac series is suitable for general purpose AC power switching.They can be used as an ON/OFF function in applications such as static relays,heating regulation,water heaters,induction motor starting circuits...or for phase control operation in high power motor speed controllers,soft start circuits...The snubberless versions (BTA/BTB...W and T25series)are specially recommended for use on inductive loads,thanks to their high commutation performances.By using an internal ceramic pad,the BTA series provides voltage insulated tab (rated at 2500V RMS)complying with UL standards (File ref.:E81734).Symbol Value Unit I T(RMS)25A V DRM /V RRM 600and 800V I GT (Q 1)35to 50mAABSOLUTE MAXIMUM RATINGSSymbol ParameterValueUnit I T(RMS)RMS on-state current (full sine wave)D P AK TO-220AB Tc =100°C 25ARD91TOP3Ins.Tc =90°C TO-220AB Ins.Tc =75°C I TSM Non repetitive surge peak on-state current (full cycle,Tj initial =25°C)F =60Hz t =16.7ms 260A F =50Hzt =20ms250I t I t Value for fusingtp =10ms450A s dI/dtCritical rate of rise of on-state current I G =2x I GT ,tr ≤100nsF =120Hz Tj =125°C 50A/µs V DSM /V RSM Non repetitive surge peak off-statevoltagetp =10ms Tj =25°C V DRM /V RRM+100V I GM Peak gate currenttp =20µsTj =125°C 4A P G(AV)Average gate power dissipation Tj =125°C1W T stg T jStorage junction temperature range Operating junction temperature range-40to +150-40to +125°C GA2A1GA2A2A1GA2A2A1TO-220AB (BTB24)TO-220AB Insulated (BTA24)TOP3Insulated (BTA26)A1A2GA2A2GA1A2A1GD 2PAK (T25G)RD91(BTA25)BTA/BTB24,BTA25,BTA26and T25Series2/9ELECTRICAL CHARACTERISTICS (Tj =25°C,unless otherwise specified)sSNUBBERLESS ™(3Quadrants)T25-G,BTA/BTB24...W,BTA25...W,BTA26...WsSTANDARD (4Quadrants):BTA25...B,BTA26...BSTATIC CHARACTERISTICSNote 1:minimum IGT is guaranted at 5%of IGT max.Note 2:for both polarities of A2referenced to A1Symbol Test ConditionsQuadrantT25BTA/BTB UnitT2535CW BW I GT (1)V D =12V R L =33ΩI -II -III MAX.353550mA V GT I -II -III MAX. 1.3V V GD V D =V DRM R L =3.3k ΩTj =125°CI -II -IIIMIN.0.2V I H (2)I T =500mA MAX.505075mA I L I G =1.2I GTI -III MAX.707080mA II8080100dV/dt (2)V D =67%V DRM gate open Tj =125°CMIN.5005001000V/µs (dI/dt)c (2)Without snubberTj =125°CMIN.131322A/msSymbol Test ConditionsQuadrant Value Unit I GT (1)V D =12VR L =33ΩI -II -III IV MAX.50100mA V GT ALL MAX. 1.3V V GD V D =V DRM R L =3.3k ΩTj =125°CALLMIN.0.2V I H (2)I T =500mA MAX.80mA I L I G =1.2I GTI -III -IVMAX.70mAII160dV/dt (2)V D =67%V DRM gate open Tj =125°CMIN.500V/µs (dV/dt)c (2)(dI/dt)c =13.3A/msTj =125°CMIN.10V/µs Symbol Test ConditionsValue Unit V TM (2)I TM =35Atp =380µsTj =25°C MAX. 1.55V V to (2)Threshold voltage Tj =125°C MAX.0.85V R d (2)Dynamic resistance Tj =125°C MAX.16m ΩI DRM I RRMV DRM =V RRMTj =25°C MAX.5µA Tj =125°C3mABTA/BTB24,BTA25,BTA26and T25Series3/9THERMAL RESISTANCESS:Copper surface under tabPRODUCT SELECTORBTB:Non insulated TO-220AB packageORDERING INFORMATIONSymbol ParameterValue Unit R th(j-c)Junction to case (AC)D PAK TO-220AB 0.8°C/WRD91(Insulated)TOP3Insulated 1.1TO-220AB Insulated1.7R th(j-a)Junction to ambientS =1cmD PAK 45°C/WTOP3Insulated 50TO-220AB 60TO-220AB InsulatedPart NumberVoltage (xxx)SensitivityType Package 600V800V BTB24-xxxB X X 50mA Standard TO-220AB BTA/BTB24-xxxBW X X 50mA Snubberless TO-220AB BTA/BTB24-xxxCW X X 35mA Snubberless TO-220AB BTA25-xxxB X X 50mA Standard RD-91BTA25-xxxBW X X 50mA Snubberless RD-91BTA25-xxxCW X X 35mA Snubberless RD-91BTA26-xxxB X X 50mA Standard TOP3Ins.BTA26-xxxBW X X 50mA Snubberless TOP3Ins.BTA26-xxxCW X X 35mA Snubberless TOP3Ins.T2535-xxxGXX35mASnubberlessDPAK BT A 24-600BWTRIAC SERIES INSULATION:A:insulatedB:non insulatedCURRENT:24:25A in TO-220AB 25:25A in Rd9126:25A in TOP3SENSITIVITY &TYPE B:50mA STANDARDBW:50mA SNUBBERLESS CW:35mA SNUBBERLESSVOLTAGE:600:600V 800:800VBTA/BTB24,BTA25,BTA26and T25Series4/9OTHER INFORMATIONNote :xxx=voltage,y =sensitivity,z =typePart NumberMarkingWeight Base quantity Packing mode BTA/BTB24-xxxyz BTA/BTB24xxxyz 2.3g 250Bulk BTA25-xxxyz BTA25xxxyz 20g 25Bulk BTA26-xxxyz BTA26xxxyz 4.5g 120Bulk T2535-xxxG T2535xxxG 1.5g 50Tube T2535-xxxG-TRT2535xxxG1.5g1000Tape &reelT 2535-600G(-TR)TRIAC SERIES SENSITIVITY:35:35mAVOLTAGE:600:600V 800:800VCURRENT:25APACKAGE:G:D PAK2PACKING MODE:Blank:Tube-TR:Tape &ReelBTA/BTB24,BTA25,BTA26and T25Series5/9Fig.1:Maximum power dissipation versus RMS on-state current (full cycle).Fig.2-1:RMS on-state current versus case temperature (full cycle).Fig.2-2:D P AK RMS on-state current versus ambient temperature (printed circuit board FR4,copper thickness:35µm),full cycle.Fig.3:Relative variation of thermal impedance versus pulse duration.Fig.4:On-state characteristics (maximumvalues).Fig.5:Surge peak on-state current versus number of cycles.5101520250510********IT(RMS)(A)P (W)025507510012551015202530Tc(°C)IT(RMS)(A)BTA24BTB/T25BTA25/262550751001250.00.51.01.52.02.53.03.54.0Tamb(°C)IT(RMS)(A)D PAK (S=1cm )221E-31E-21E-11E+01E+11E+25E+21E-31E-21E-11E+0tp (s)K=[Zth/Rth]Zth(j-c)Zth(j-a)BTA/BTB24/T25Zth(j-a)BTA260.51.01.52.02.53.03.54.0 4.5110100300VTM (V)ITM (A)Tj=25°CTj maxTj max.Vto =0.85V Rd =16m Ω110100100050100150200250300Number of cyclesITSM (A)Non repetitive Tj initial=25°CRepetitive Tc=75°COne cyclet=20msBTA/BTB24,BTA25,BTA26and T25Series6/9Fig.6:Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp <10ms,and corresponding value of I t.Fig.7:Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values).Fig.8:Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values).Fig.9:Relative variation of critical rate of decrease of main current versus junction temperature.Fig.10:D PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4,copper thickness:35µm).0.010.101.0010.0010010003000tp (ms)ITSM (A),I t (A s)Tj initial=25°CITSMI tdI/dt limitation:50A/µs-40-20204060801001201400.00.51.01.52.02.5Tj(°C)IGT,IH,IL[Tj]/IGT,IH,IL[Tj=25°C]IGTIH &IL0.11.010.0100.00.40.60.81.01.21.41.61.82.02.22.4(dV/dt)c (V/µs)(dI/dt)c [(dV/dt)c]/Specified (dI/dt)cBW/CW/T2535B2550751001250123456Tj (°C)(dI/dt)c [Tj]/(dI/dt)c [Tj specified]4812162024283236401020304050607080S(cm )Rth(j-a)(°C/W)D PAKBTA/BTB24,BTA25,BTA26and T25Series7/9PACKAGE MECHANICAL DATA D PAK (Plastic)REF.DIMENSIONSMillimeters Inches Min.Typ.Max.Min.Typ.Max.A 4.30 4.600.1690.181A1 2.49 2.690.0980.106A20.030.230.0010.009B 0.700.930.0270.037B2 1.25 1.400.0480.055C 0.450.600.0170.024C2 1.21 1.360.0470.054D 8.959.350.3520.368E 10.0010.280.3930.405G 4.88 5.280.1920.208L 15.0015.850.5900.624L2 1.27 1.400.0500.055L3 1.40 1.750.0550.069R 0.400.016V20°8°0°8°AC2DR2.0MIN.FLAT ZONEA2V2CA1GLL3L2BB2EFOOTPRINT DIMENSIONS (in millimeters)D PAK (Plastic)8.903.701.305.0816.9010.30BTA/BTB24,BTA25,BTA26and T25Series8/9PACKAGE MECHANICAL DATA RD91(Plastic)REF.DIMENSIONSMillimeters InchesMin.Max.Min.Max.A 40.00 1.575A129.9030.30 1.1771.193A222.000.867B 27.00 1.063B113.5016.500.5310.650B224.000.945C 14.000.551C1 3.500.138C2 1.95 3.000.0770.118E30.700.900.0270.035F 4.00 4.500.1570.177I 11.2013.600.4410.535L1 3.10 3.500.1220.138L2 1.70 1.900.0670.075N133°43°33°43°N228°38°28°38°A2L2L1B2CC2A1C1B1N1BFIAE3N2PACKAGE MECHANICAL DATA TOP3(Plastic)REF.DIMENSIONSMillimeters Inches Min.Typ.Max.Min.Typ.Max.A 4.4 4.60.1730.181B 1.45 1.550.0570.061C 14.3515.600.5650.614D 0.50.70.0200.028E 2.7 2.90.1060.114F 15.816.50.6220.650G 20.421.10.8150.831H 15.115.50.5940.610J 5.4 5.650.2130.222K 3.4 3.650.1340.144L 4.08 4.170.1610.164P 1.201.400.0470.055R4.600.181BTA/BTB24,BTA25,BTA26and T25Series9/9PACKAGE MECHANICAL DATA TO-220AB (Plastic)REF.DIMENSIONSMillimeters Inches Min.Typ.Max.Min.Typ.Max.A 15.2015.900.5980.625a1 3.750.147a213.0014.000.5110.551B 10.0010.400.3930.409b10.610.880.0240.034b2 1.23 1.320.0480.051C 4.40 4.600.1730.181c10.490.700.0190.027c2 2.40 2.720.0940.107e 2.40 2.700.0940.106F 6.20 6.600.2440.259I 3.75 3.850.1470.151I415.8016.4016.800.6220.6460.661L 2.65 2.950.1040.116l2 1.14 1.700.0440.066l3 1.14 1.700.0440.066M2.600.102MBl4Cb2a2l2c2l3b1a1AFLIec1Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.©The ST logo is a registered trademark of STMicroelectronics ©2000STMicroelectronics -Printed in Italy -All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia -Brazil -China -Finland -France -Germany -Hong Kong -India -Italy -Japan -Malaysia -Malta -MoroccoSingapore -Spain -Sweden -Switzerland -United Kingdom。

1/6®BTA/BTB06 SeriesSNUBBERLESS ™, LOGIC LEVEL & STANDARD6A TRIAC SApril 2002 - Ed: 5AMAIN FEATURES:DESCRIPTIONSuitable for AC switching operations, the BTA/BTB06 series can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control in light dimmers, motor speed controllers,...The snubberless and logic level versions (BTA/BTB...W) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad,the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734)Symbol Value Unit I T(RMS)6A V DRM /V RRM600 and 800VI G (Q 1)5 to 50mAABSOLUTE MAXIMUM RATINGSSymbol ParameterValueUnit I T(RMS)RMS on-state current (full sine wave)TO-220ABTc = 110°C 6ATO-220AB Ins.Tc = 105°C I TSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 60AF = 60 Hzt = 16.7 ms63I ²t I ²t Value for fusingtp = 10 ms21A ²s dI/dt Critical rate of rise of on-state current I G = 2 x I GT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50A/µs I GM Peak gate currenttp = 20 µsTj = 125°C 4A P G(AV)Average gate power dissipation Tj = 125°C1W T stg T jStorage junction temperature range Operating junction temperature range- 40 to + 150- 40 to + 125°CBTA/BTB06 Series2/6ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)sSNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)sSTANDARD (4 Quadrants)STATIC CHARACTERISTICSNote 1: minimum IGT is guaranted at 5% of IGT max.Note 2: for both polarities of A2 referenced to A1Symbol Test ConditionsQuadrantBTA/BTB06UnitTWSW CW BW I GT (1)V D = 12 V R L = 30 ΩI - II - III MAX.5103550mA V GT I - II - III MAX. 1.3V V GD V D = V DRM R L = 3.3 k ΩTj = 125°C I - II - IIIMIN.0.2V I H (2)I T = 100 mA MAX.10153550mA I L I G = 1.2 I GTI - III MAX.10255070mA II15306080dV/dt (2)V D = 67 %V DRM gate open Tj = 125°CMIN.20404001000V/µs (dI/dt)c (2)(dV/dt)c = 0.1 V/µs Tj = 125°C MIN.2.73.5--A/ms(dV/dt)c = 10 V/µs Tj = 125°C 1.2 2.4--Without snubber Tj = 125°C-- 3.55.3Symbol Test ConditionsQuadrant BTA/BTB06UnitCB I G (1)V D = 12 V R L = 30 ΩI - II - III IV MAX.255050100mA V GT ALL MAX. 1.3V V GD V D = V DRM R L = 3.3 k Ω Tj = 125°C ALLMIN.0.2V I H (2)I T = 500 mA MAX.2550mA I L I G = 1.2 I GTI - III - IVMAX.4050mA II80100dV/dt (2)V D = 67 %V DRM gate open Tj = 125°CMIN.200400V/µs (dV/dt)c (2)(dI/dt)c = 2.7 A/ms Tj = 125°CMIN.510V/µsSymbol Test ConditionsValue Unit V T (2)I TM = 5.5 A tp = 380 µs Tj = 25°C MAX. 1.55V V to (2)Threshold voltage Tj = 125°C MAX.0.85V R d (2)Dynamic resistance Tj = 125°C MAX.60m ΩI DRM I RRMV DRM = V RRMTj = 25°C MAX.5µA Tj = 125°C1mABTA/BTB06 Series3/6THERMAL RESISTANCESPRODUCT SELECTORBTB: non insulated TO-220AB packageORDERING INFORMATIONOTHER INFORMATIONNote: xxx = voltage, y = sensitivity, z = typeSymbol ParameterValue Unit R th(j-c)Junction to case (AC)TO-220AB 1.8°C/WTO-220AB Insulated 2.7R th(j-a)Junction to ambientTO-220ABTO-220AB Insulated60°C/W Part NumberVoltage (xxx)SensitivityType Package 600 V800 V BTA/BTB06-xxxB X X 50 mA Standard TO-220AB BTA/BTB06-xxxBW X X 50 mA Snubberless TO-220AB BTA/BTB06-xxxC X X 25 mA Standard TO-220AB BTA/BTB06-xxxCW X X 35 mA Snubberless TO-220AB BTA/BTB06-xxxSW X X 10 mA Logic level TO-220AB BTA/BTB06-xxxTWXX5 mALogic levelTO-220ABPart NumberMarkingWeight Base quantity Packing mode BTA/BTB06-xxxyz BTA/BTB06-xxxyz 2.3 g 250Bulk BTA/BTB06-xxxyzRGBTA/BTB06-xxxyz2.3 g50TubeBTA/BTB06 Series4/6Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle).Fig. 2: RMS on-state current versus case temperature (full cycle).Fig. 3: Relative variation of thermal impedance versus pulse duration.Fig. 4: On-state characteristics (maximum values).Fig. 5: Surge peak on-state current versus number of cycles.Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp <10ms, and corresponding value of I²t.BTA/BTB06 Series5/6Fig. 7: Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values).Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Snubberless & Logic Level T ypesFig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Standard T ypesFig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.BTA/BTB06 SeriesPACKAGE MECHANICAL DATAInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.© The ST logo is a registered trademark of STMicroelectronics© 2002 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - GermanyHong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - SingaporeSpain - Sweden - Switzerland - United Kingdom - United States.6/6。

上海贝特产品性能指标说明一、分支分配器指标一分支器 (BTT1XXE)项目参数分支损耗(dB)标称值06 08 10 12 14 16 18 20 典型值(允许偏差)5MHz ± 0.5 6.5 7.5 10.6 12.4 13.6 15.8 18.2 20.310MHz ± 0.5 6.5 7.5 10.6 12.4 13.8 15.8 18.2 20.350MHz ± 0.5 6.5 7.5 10.6 12.3 13.9 15.9 18.2 20.4750MHz ± 0.7 6.5 7.5 10.4 12.2 14.0 16.4 17.8 20.21000MHz ± 1.0 6.5 7.7 10.5 12.1 14.5 16.5 17.8 20.0插入损耗(dB)5MHz ≤ 2.6 ≤ 2.3 ≤ 1.5 ≤ 1.2 ≤ 1.1 ≤ 0.8 ≤ 0.7 ≤ 0.7 10MHz ≤ 2.6 ≤ 2.4 ≤ 1.4 ≤ 1.2 ≤ 1.0 ≤ 0.7 ≤ 0.6 ≤ 0.6 50MHz ≤ 2.6 ≤ 2.5 ≤ 1.4 ≤ 1.2 ≤ 0.9 ≤ 0.7 ≤ 0.6 ≤ 0.6 750MHz ≤ 3.0 ≤ 2.6 ≤ 1.5 ≤ 1.2 ≤ 1.0 ≤ 0.7 ≤ 0.7 ≤ 0.7 1000MHz ≤ 3.3 ≤ 2.8 ≤ 1.7 ≤ 1.6 ≤ 1.1 ≤ 0.9 ≤ 0.9 ≤ 0.9反向隔离(dB)5-10MHz ≥ 27 10-1000MHz ≥ 27反射损耗(dB)5-10MHz ≥ 16 10-1000MHz ≥ 18二分支器 (BTT2XXE)项目参数分支损耗(dB)标称值08 10 12 14 16 18 20 22 24 典型值( 允许偏差 )5MHz ± 0.5 7.0 10.5 11.8 14.0 16.0 17.8 19.8 22.1 24.010MHz ± 0.5 7.0 10.5 11.5 14.0 16.0 17.8 20.0 22.0 23.850MHz ± 0.5 7.0 10.5 11.5 13.8 16.0 17.9 20.0 22.0 23.8750MHz ± 0.7 7.4 10.7 11.9 13.8 16.0 17.9 20.8 22.4 24.01000MHz ± 1.0 7.8 10.8 12.0 13.6 16.0 18.5 20.8 22.4 24.0插入损耗(dB)5MHz ≤ 3.7 ≤ 2.6 ≤ 1.7 ≤ 1.3 ≤ 1.0 ≤ 1.0 ≤ 0.9 ≤ 0.8 ≤ 0.8 10MHz ≤ 3.5 ≤ 2.4 ≤ 1.5 ≤ 1.3 ≤ 1.0 ≤ 1.0 ≤ 0.7 ≤ 0.7 ≤ 0.7 50MHz ≤ 3.6 ≤ 2.5 ≤ 1.6 ≤ 1.3 ≤ 1.0 ≤ 0.9 ≤ 0.7 ≤ 0.7 ≤ 0.7 750MHz ≤ 3.9 ≤ 2.6 ≤ 1.7 ≤ 1.4 ≤ 1.2 ≤ 0.9 ≤ 0.8 ≤ 0.8 ≤ 0.7 1000MHz ≤ 4.2 ≤ 2.9 ≤ 2.1 ≤ 1.6 ≤ 1.4 ≤ 1.1 ≤ 1.0 ≤ 0.9 ≤ 0.9反向隔离(dB)5-10MHz ≥ 27 10-1000MHz ≥ 28相互隔离(dB)5-10MHz ≥ 27 10-1000MHz ≥ 28三分支器 (BTT3XXE)项目参数分支损耗(dB)标称值10 12 14 16 18 20 22 24 典型值( 允许偏差 )5MHz ± 0.5 8.9 12.7 14.7 16.0 18.0 20.0 21.6 24.010MHz ± 0.5 8.6 12.7 14.7 16.0 18.0 20.0 21.6 24.050MHz ± 0.5 8.6 12.7 14.7 16.0 17.9 20.0 21.6 24.0750MHz ± 1.0 9.3 12.8 14.4 15.5 17.5 20.0 22.1 24.61000MHz ± 1.0 9.8 12.9 14.7 15.3 17.4 19.8 21.7 24.1插入损耗(dB)5MHz ≤ 3.7 ≤ 2.6 ≤ 1.8 ≤ 1.4 ≤ 1.2 ≤ 1.0 ≤ 0.8 ≤ 0.8 10MHz ≤ 3.5 ≤ 2.4 ≤ 1.8 ≤ 1.4 ≤ 1.2 ≤ 1.0 ≤ 0.7 ≤ 0.7 50MHz ≤ 3.6 ≤ 2.5 ≤ 1.8 ≤ 1.4 ≤ 1.2 ≤ 0.9 ≤ 0.7 ≤ 0.7 750MHz ≤ 3.9 ≤ 2.6 ≤ 2.2 ≤ 1.6 ≤ 1.2 ≤ 0.9 ≤ 0.8 ≤ 0.8 1000MHz ≤ 4.2 ≤ 3.0 ≤ 2.6 ≤ 1.8 ≤ 1.4 ≤ 1.1 ≤ 0.9 ≤ 0.9反向隔离(dB)5-10MHz ≥ 27 10-1000MHz ≥ 28相互隔离(dB)5-10MHz ≥ 27 10-1000MHz≥ 28反射损耗(dB)5-10MHz ≥ 16 10-1000MHz≥ 18四分支器 (BTT 4XXE)项目参数分支损耗(dB)标称值10 12 14 16 18 20 22 24 典型值( 允许偏差 )5MHz ± 0.5 10.2 12.7 14.5 16.4 18.1 20.0 22.0 24.010MHz ± 0.5 10.0 12.5 14.4 16.2 18.0 20.0 22.0 23.850MHz ± 0.5 9.8 12.5 14.3 16.2 18.0 20.0 22.0 23.8750MHz ± 0.7 10.5 12.6 14.5 16.3 18.2 20.5 22.8 24.21000MHz ± 1.0 11.5 12.8 14.7 16.6 18.4 20.9 22.9 24.0插入损耗(dB)5MHz ≤ 3.6 ≤ 3.3 ≤ 2.2 ≤ 1.8 ≤ 1.4 ≤ 1.2 ≤ 0.9 ≤ 0.8 10MHz ≤ 3.5 ≤ 3.3 ≤ 2.2 ≤ 1.8 ≤ 1.3 ≤ 1.0 ≤ 0.8 ≤ 0.7 50MHz ≤ 3.6 ≤ 3.4 ≤ 2.1 ≤ 1.8 ≤ 1.3 ≤ 0.9 ≤ 0.8 ≤ 0.7 750MHz ≤ 3.9 ≤ 3.5 ≤ 2.4 ≤ 1.9 ≤ 1.5 ≤ 1.0 ≤ 0.8 ≤ 0.8 1000MHz ≤ 4.2 ≤ 3.7 ≤ 3.0 ≤ 2.3 ≤ 1.7 ≤ 1.3 ≤ 1.0 ≤ 0.9反向隔离(dB)5-10MHz ≥ 28 10-1000MHz ≥ 28相互隔离(dB)5-10MHz ≥ 28 10-1000MHz ≥ 28五分支器 (BTT5XXE)项目参数分支损耗(dB)标称值12 14 16 18 20 22 24 典型值( 允许偏差 )5MHz ± 0.7 11.9 14.2 15.9 18.3 20.0 21.9 24.010MHz ± 0.7 11.8 14.0 15.9 18.2 20.0 21.8 24.050MHz ± 0.7 11.7 14.0 15.9 18.2 19.8 21.7 24.0750MHz ± 1.0 12.7 14.5 16.2 18.3 19.8 22.0 24.11000MHz ± 1.5 13.3 14.8 16.6 18.3 20.0 22.3 24.5插入损耗(dB)5MHz ≤ 3.7 ≤ 3.4 ≤ 2.1 ≤ 1.8 ≤ 1.2 ≤ 1.1 ≤ 0.9 10MHz ≤ 3.5 ≤ 3.3 ≤ 1.9 ≤ 1.8 ≤ 1.2 ≤ 1.0 ≤ 0.8 50MHz ≤ 3.5 ≤ 3.3 ≤ 1.8 ≤ 1.8 ≤ 1.2 ≤ 0.9 ≤ 0.8 750MHz ≤ 3.9 ≤ 3.6 ≤ 2.8 ≤ 2.0 ≤ 1.4 ≤ 1.0 ≤ 1.0 1000MHz ≤ 4.1 ≤ 3.8 ≤ 3.0 ≤ 2.4 ≤ 1.6 ≤ 1.3 ≤ 1.2反向隔离(dB)5-10MHz ≥ 28 10-1000MHz ≥ 28相互隔离(dB)5-10MHz ≥ 28 10-1000MHz ≥ 28反射损耗(dB)5-10MHz ≥ 16 10-1000MHz ≥ 18六分支器 (BTT6XXE)项目参数分支损耗(dB)标称值12 14 16 18 20 22 24 典型值( 允许偏差 )5MHz ± 0.7 11.9 14.2 15.9 18.3 20.0 21.9 24.010MHz ± 0.7 11.8 14.0 15.9 18.2 20.0 21.8 24.050MHz ± 0.7 11.7 14.0 15.9 18.2 19.8 21.7 24.0750MHz ± 1.0 12.7 14.5 16.2 18.3 19.8 22.0 24.11000MHz ± 1.5 13.3 14.8 16.6 18.3 20.0 22.3 24.5插入损耗(dB)5MHz ≤ 3.7 ≤ 3.4 ≤ 2.1 ≤ 1.8 ≤ 1.2 ≤ 1.1 ≤ 0.9 10MHz ≤ 3.5 ≤ 3.3 ≤ 1.9 ≤ 1.8 ≤ 1.2 ≤ 1.0 ≤ 0.8 50MHz ≤ 3.5 ≤ 3.3 ≤ 1.8 ≤ 1.8 ≤ 1.2 ≤ 0.9 ≤ 0.8 750MHz ≤ 3.9 ≤ 3.6 ≤ 2.8 ≤ 2.0 ≤ 1.4 ≤ 1.0 ≤ 1.0 1000MHz ≤ 4.1 ≤ 3.8 ≤ 3.0 ≤ 2.4 ≤ 1.6 ≤ 1.3 ≤ 1.2反向隔离(dB)5-10MHz ≥ 28 10-1000MHz ≥ 28相互隔离(dB)5-10MHz ≥ 28 10-1000MHz ≥ 28八分支器 (BTT8XXE)项目参数分支损耗(dB)标称值14 17 20 23 26 典型值( 允许偏差 )5MHz ± 0.7 13.4 16.7 20.2 23.0 25.610MHz ± 0.7 13.4 16.7 20.1 23.0 25.650MHz ± 0.7 13.2 16.7 20.0 23.0 25.6750MHz ± 1.5 14.2 17.4 20.4 23.6 25.71000MHz ± 1.5 15.0 17.7 20.6 23.9 26.0插入损耗(dB)5MHz ≤ 3.7 ≤ 2.6 ≤ 1.2 ≤ 1.1 ≤ 0.9 10MHz ≤ 3.5 ≤ 2.4 ≤ 1.2 ≤ 1.0 ≤ 0.8 50MHz ≤ 3.5 ≤ 2.5 ≤ 1.2 ≤ 0.9 ≤ 0.8 750MHz ≤ 3.9 ≤ 2.6 ≤ 1.4 ≤ 1.1 ≤ 1.0 1000MHz ≤ 4.2 ≤ 3.0 ≤ 1.8 ≤ 1.3 ≤ 1.2反向隔离(dB)5-10MHz ≥ 28 10-1000MHz ≥ 28相互隔离(dB)5-10MHz ≥ 28 10-1000MHz ≥ 28反射损耗(dB)5-10MHz ≥ 16 10-1000MHz ≥ 18二分配器 (BTS204E)频率范围（ MHz ）分配损耗（ dB ）隔离（ dB ）反射损耗（ dB ）5-10 ≤ 3.8 ≥ 27 ≥ 1610-50 ≤ 3.8 ≥ 28 ≥ 1850-750 ≤ 3.9 ≥ 28 ≥ 18750-1000 ≤ 4.2 ≥ 28 ≥ 18三分配器 (BTS306E)频率范围（ MHz ）分配损耗（ dB ）隔离（ dB ）反射损耗（ dB ）5-10 ≤ 5.7 ≥ 27 ≥ 1610-50 ≤ 5.5 ≥ 28 ≥ 1850-750 ≤ 6.2 ≥ 28 ≥ 18750-1000 ≤ 6.6 ≥ 28 ≥ 18四分配器 (BTS408E)频率范围（ MHz ）分配损耗（ dB ）隔离（ dB ）反射损耗（ dB ）5-10 ≤ 7.2 ≥ 27 ≥ 1610-50 ≤ 7.0 ≥ 28 ≥ 1850-750 ≤ 7.8 ≥ 28 ≥ 18750-1000 ≤ 8.2 ≥ 28 ≥ 18四分配器 (BTS408EA)频率范围（ MHz ）分配损耗（ dB ）隔离（ dB ）反射损耗（ dB ）5-10 ≤ 7.2 ≥ 27 ≥ 1610-50 ≤ 7.0 ≥ 28 ≥ 1850-750 ≤ 7.8 ≥ 28 ≥ 18750-1000 ≤ 8.2 ≥ 28 ≥ 18四分配器 (BTS408EB)频率范围（ MHz ）分配损耗（ dB ）隔离（ dB ）反射损耗（ dB ）5-10 ≤ 7.2 ≥ 27 ≥ 1610-50 ≤ 7.0 ≥ 28 ≥ 1850-750 ≤ 7.8 ≥ 28 ≥ 18750-1000 ≤ 8.2 ≥ 28 ≥ 18五分配器 (BTS509E)频率范围（ MHz ）分配损耗（ dB ）隔离（ dB ）反射损耗（ dB ）5-10 ≤ 8.8 ≥ 27 ≥ 1610-50 ≤ 8.8 ≥ 28 ≥ 1850-750 ≤ 9.3 ≥ 28 ≥ 18750-1000 ≤ 10.0 ≥ 28 ≥ 18六分配器 (BTS610E)频率范围（ MHz ）分配损耗（ dB ）隔离（ dB ）反射损耗（ dB ）5-10 ≤ 8.9 ≥ 27 ≥ 1610-50 ≤ 8.8 ≥ 28 ≥ 1850-750 ≤ 9.9 ≥ 28 ≥ 18750-1000 ≤ 10.5 ≥ 28 ≥ 18八分配器 (BTS812E)频率范围（ MHz ）分配损耗（ dB ）隔离（ dB ）反射损耗（ dB ）5-10 ≤ 10.8 ≥ 27 ≥ 1610-50 ≤ 10.8 ≥ 28 ≥ 1850-750 ≤ 11.5 ≥ 28 ≥ 18750-1000 ≤ 12.5 ≥ 28 ≥ 18二、射频传输放大设备BTIA4000系列放大器技术指标特点：1,BTIA4000系列放大器是吸收了国外最新同类产品的长处，为有线电视系统研制的放大设备。

®1/6Table 1: Main FeaturesDESCRIPTIONAvailable in high power packages, the BTW67 /BTW69 Series is suitable in applications where power handling and power dissipation are critical,such as solid state relays, welding equipment,high power motor control.Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities.Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS ), complying with UL standards (file ref: E81734).Symbol Value Unit I T(RMS)50A V DRM /V RRM600 to 1200V I GT80mABTW67 and BTW69 Series50A SCR SREV. 5February 2006STANDARDTable 2: Order CodesPart Numbers Marking BTW67-xxx BTW67xxx BTW69-xxxRGBTW69xxxTable 3: Absolute Ratings (limiting values)SymbolParameterValueUnit I T(RMS) RMS on-state current(180° conduction angle)RD91T c = 70°C 50A TOP3 Ins.T c = 75°C IT (AV) Average on-state current (180° conduction angle)RD91T c = 70°C 32A TOP3 Ins.T c = 75°C I TSM Non repetitive surge peak on-state current t p = 8.3 ms T j = 25°C 610A t p = 10 ms580I ²t I ²t Value for fusingT j = 25°C 1680A 2S dI/dt Critical rate of rise of on-state current I G = 2x I GT , t r ≤ 100 ns F = 60 HzT j = 125°C 50A/µs I GM Peak gate currentt p = 20 µsT j = 125°C 8A P G(AV)Average gate power dissipation T j = 125°C1W T stg T j Storage junction temperature range Operating junction temperature range - 40 to + 150- 40 to + 125°C V RGMMaximum peak reverse gate voltage5VBTW67 and BTW69 Series2/6Tables 4: Electrical Characteristics (T j = 25°C, unless otherwise specified)Table 5: Thermal resistance Symbol Test ConditionsValue Unit I GT V D = 12 V R L = 33 ΩMIN.8mA MAX.80V GT MAX. 1.3V V GD V D = V DRM R L = 3.3 k ΩT j = 125°CMIN.0.2V I H I T = 500 mA Gate open MAX.150mA I L I G = 1.2 x I GTMAX.200mA dV/dt V D = 67 % V DRM Gate open T j = 125°C MIN.1000V/µs V TM I TM = 100 A tp = 380 µs T j = 25°C MAX. 1.9V V t0Threshold voltage T j = 125°C MAX. 1.0V R d Dynamic resistance T j = 125°C MAX.8.5m ΩI DRM I RRMV DRM = V RRMT j = 25°C MAX.10µA T j = 125°C 5mASymbol ParameterValue Unit R th(j-c)Junction to case (D.C.)RD91 (Insulated) 1.0°C/W TOP3 Insulated 0.9R th(j-a)Junction to ambient (D.C.)TOP3 Insulated50°C/WFigure 1: Maximum average power dissipation versus average on-state currentFigure 2: Average and D.C. on-state current versus case temperatureBTW67 and BTW69 Series3/6Figure 3: Relative variation of thermal impedance versus pulse durationFigure 4: Relative variation of gate trigger current, holding current and latching current versus junction temperatureFigure 5: Surge peak on-state current versus number of cyclesFigure 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp <10ms, and corresponding values of I²tFigure 7: On-state characteristics (maximum values)BTW67 and BTW69 Series4/6Figure 8: Ordering Information SchemeTable 6: Product Selector Figure 9: RD91 Package Mechanical DataPart Numbers Voltage (xxx)Sensitivity Package 600 V 800 V 1200 V BTW67-xxx X X X 80 mA RD91BTW69-xxxXXX80 mATOP3 Ins.BTW67 and BTW69 Series5/6Figure 10: TOP3 Insulated Package Mechanical DataIn order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: .Table 7: Ordering InformationOrdering type Marking Package Weight Base qtyDelivery modeBTW67-xxx BTW67xxx RD9120 g 25Bulk BTW69-xxxRGBTW69xxxTOP3 Ins.4.5 g30TubeNote: xxx = voltageTable 8: Revision HistoryDate Revision Description of ChangesApr-20014A Last update.13-Feb-20065TOP3 Insulated delivery mode changed from bulk to tube.ECOPACK statement added.BTW67 and BTW69 SeriesInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics.All other names are the property of their respective owners© 2006 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America6/6。