CM300DU-24F中文资料

Gate-emitter threshold voltage Thermal resistance *1Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage WeightV CE = V CES , V GE = 0V V GE = V GES , V CE = 0V T j = 25°CT j = 125°C V CC = 600V, I C = 300A, V GE = 15V V CC = 600V, I C = 300A V GE1 = V GE2 = 15VR G = 1Ω, Inductive load switching operation I E = 300AI E = 300A, V GE = 0V IGBT part (1/2 module)FWDi part (1/2 module)Case to fin, Thermal compound Applied *2 (1/2 module)IGBT part (1/2 module)FWDi part (1/2 module)I C = 30mA, V CE = 10VI C = 300A, V GE = 15VV CE = 10V V GE = 0V1200±2030060030060011301900–40 ~ +150–40 ~ +12525003.5 ~ 4.53.5 ~ 4.5400HIGH POWER SWITCHING USEV V A A A A W W °C °C V N • m N • m g116.5—4740.9—30080500150250—3.50.110.18—0.066*30.1*310mA µA nF nF nF nC ns ns ns ns µC V °C/W °C/W °C/W °C/W °C/W Ω——5.05.0———1360—————13———0.04———————————————————————16V V 4.57.5ns Collector cutoff current Gate leakage current Collector-emittersaturation voltage (Note 4)Input capacitance Output capacitanceReverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall timeReverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance *4External gate resistanceI CES I GES C ies C oes C res Q G t d(on)t rt d(off)t ft rr (Note 1)Q rr (Note 1)V EC(Note 1)R th(j-c)Q R th(j-c)R R th(c-f)R th(j-c’)Q R th(j-c’)R R GSymbol ParameterV GE(th)V CE(sat)*1 : T C measured point is shown in page OUTLINE DRAWING.*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.*3 : If you use this value, R th(f-a) should be measured just under the chips.*4 : T C ’ measured point is just under the chips.Note 1. I E , V EC , t rr & Q rr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).2. Pulse width and repetition rate should be such that the device junction temp. (T j ) does not exceed T jmax rating.3. Junction temperature (T j ) should not increase beyond 150°C.4. No short circuit capability is designed.G-E Short C-E Short Operation (Note 2)Pulse (Note 2)Operation (Note 2)Pulse(Note 2)T C = 25°C T C ’ = 25°C *4Main Terminal to base plate, AC 1 min.Main Terminal M6Mounting holes M6Typical valueSymbol ParameterCollector current Emitter currentMounting torque ConditionsUnit Ratings V CES V GES I C I CMI E (Note 1)I EM (Note 1)P C (Note 3)P C ’ (Note 3)T j T stg V iso———Unit Typ.Limits Min.Max.Test conditionsMAXIMUM RATINGS (Tj = 25°C)ELECTRICAL CHARACTERISTICS (Tj = 25°C)HIGH POWER SWITCHING USEHIGH POWER SWITCHING USE。

TENTATIVECM100DC-24NFMPre. S.Kawabata,H.Takemoto,M.HiyoshiApr. Y.Nagashima 1-Dec-'06 RevHIGH POWER SWITCHING USE─────────────────────────────────────────────────── Notice: This is not a final specification. Some parametric limits are subject to change.CM100DC-24NFMI C ････････････････････････････ 100A V CES ････････････････････････ 1200V Insulated Type2-elements in a pack Caution: No short circuit capability is designed.APPLICATIONHigh frequency switching use & Resonant inverter power supply, etcABSOLUTE MAXIMUM RATINGS (T j =25°C, unless otherwise specified) Symbol Item Conditions Ratings Units V CES Collector-emitter voltage G-E Short 1200 V V GES Gate-emitter voltage C-E Short ± 20 V I C Operation 100I CM Collector current Pulse *4200 A I E *3 Operation 100I EM *3 Emitter current Pulse *4 200 AP C *5 Maximum collector dissipation T C =25°C *1 670 W T j Junction temperature - 40 ~ +150°C T stg Storage temperature - 40 ~ +125°C V iso Isolation voltage Main terminal to base plate, AC 1 min. 2500 V- Torque strength Main terminal M6 3.5 ~ 4.5 N ･m - Torque strength Mounting holes M6 3.5 ~ 4.5 N ･m - Weight Typical value 375 g────────────────────────────────────────────────── ELECTRICAL CHARACTERISTICS (T j =25°C, unless otherwise specified) Symbol Item Conditions Min. Typ. Max.Units I CES Collector cutoff currentV CE =V CES , V GE =0V - - 1 mAV GE(th) Gate-emitterthreshold voltage I C =10mA, V CE =10V 4.5 6.0 7.5 VI GES Gate leakage current ±V GE =V GES , V CE =0V - - 0.5 μAI C =100A *6 T j =25°C - 3.0 4.5V CE(sat)Collector to emitter saturationvoltageV GE =15V T j =125°C - 3.0 -VC ies Input capacitance - - 16 C oes Output capacitance V GE =0V, V CE =10V *6 - - 1.3 nF C res Reverse transfer capacitance--0.3Q G Total gate charge V CC =600V, I C =100A, V GE =15V - 450 - nC t d(on) Turn-on delay time V CC =600V, I C =100A - - 100t r Turn-on rise timeV GE1=V GE2=15V, R G =3.1Ω - - 50t d(off) Turn-off delay time Inductive load - - 250t fTurn-off fall time switching operation - 60 200t rr *3 Reverse recovery time I E =100A - 70 120ns Q rr *3 Reverse recovery charge - 6 －μC V EC *3 Emitter-collector voltage I E =100A, V GE =0V - 2.0 3.0 V R th(j-c)Q IGBT part (1/2 module) *1 - - 0.186R th(j-c)RThermal resistanceFWDi part (1/2 module) *1 - - 0.28R th(c-f) Contact thermal resistance Case to fin, Thermal grease applied (1/2module) *1 *2- 0.02 -°C/W R G External gate resistance 3.1 - 31 Ω*1: T C , T f measured point is just under the chips.*2: Typical value is measured by using Shin-Etsu Chemical Co.,Ltd "G-747".*3: I E , I EM , V EC , t rr & Q rr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).*4: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed Tjmax rating.*5: Junction temperature (T j ) should not increase beyond 150°C.*6: Pulse width and repetition rate should be such as to cause neglible temperature rise.──────────────────────────────────────────────────OUTLINE DRAWINGDimensions in mmCIRCUIT DIAGRAM。

RT8207GQW RICHTEK SMD 先，诚信为本【明烽威电子】RT8205GS RICHTEK SMD 品质为先，诚信为本【明烽威电子】RT8105GS RICHTEK SMD 品质为先，诚信为本【明烽威电子】RT8105GS RICHTEK SMD 品质为先，诚信为本【明烽威电子】RT8016GQW RICHTEK SMD 品质为先，诚信为本【明烽威电子】RT8010GQW RICHTEK SMD 品质为先，诚信为本【明烽威电子】RT8010AGQW RICHTEK SMD 品质为先，诚信为本【明烽威电子】RT6504ZQW RICHTEK SMD 品质为先，诚信为本【明烽威电子】RT3606BCGQW RICHTEK SMD 品质为先，诚信为本【明烽威电子】RT870AZQW RICHTEK SMD 品质为先，诚信为本【明烽威电子】R7711AGE RICHTEK SMD 先，诚信为本【明烽威电子】TSM104WAIDT ST SMD STM8L152R8T6ST SMD STK3321-28A SENSORT SMD SKY77916-31SKYWORK SMD SKY77916-21SKYWORK SMD SKY77643-31SKYWORK SMDNUC029LAN Nuvoton TechnologyCorpSMDNQ2102D2EV NXP SMD NQ2102D2EV/C101Y NXP SMD CX93510-12ZP1CONEXAN SMD BQ24735RGRR TI SMD 明烽威电子明烽威电子VVZ110-12IO7IXYS IGBT VVZ24-16IO1IXYS IGBT VVZ24-12IO1IXYS IGBT SKM400GB07E3SEMIKRON IGBT SKKT323/16E SEMIKRON IGBT SKKT323/12SEMIKRON IGBT SKHI01TR SKHI01TR IGBT PM800HSA060MITSUBISHI IGBT MWI150-12T8T IXYS IGBT FRS300BA50SANREX IGBT FP25R12W2T4_B11Infineon IGBT FP25R12W2T4Infineon IGBT CM600DX-24T MITSUBISHI IGBT 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各品牌IGBT模块型号参数大全
一.IGBT模块
1.富士IGBT N系列(高速,低导通压降) P系列 S系列
2.EUPEC(西门子）IGBT 电流参数据库85C标称
DN2：标准系列
KE3：低导通压降系列
KS4：高速系列
DLC：低导通压降系列
PIM:三相桥+七单元+NTC GP系列 FP系列
大功率IGBT模块
CHOPPER=IGBT+二极管 GAL=IGBT+C接二级管 GAR=IGBT+E接二极管
3.三菱IGBT模块
H系列
H系列
A系列
NF系列
U系列
MDX系列
MD3:单相桥+六单元 MD1:三相桥+六单元 MD:三相桥+七单元
E3系列
4.SEMIKRON(西门康)IGBT
低损耗型(频率:0-4KHZ)
沟道式超低损耗型(频率0-6KHZ)
标准系列（频率：4-12KHZ）
软穿通式高速型（频率：5-20KHZ）
CHOPPER GAL=IGBT+C串二极管 GAR=IGBT+E串二极管
MiniSKiiP系列
SEMIX系列
SEMITOP系列
GAL=IGBT+C串二极管 GAR=IGBT+E串二极管
SKIM系列
超高速型(频率:30KHZ)
大功率集成装置(SEMISTACK)
5.IXYS(艾赛斯)IGBT
ID=IGBT+C串二极管 DI=IGBT+串二极管
6.APT IGBT
7.DYNEX IGBT
8.ABB IGCT
模块的基本参数，IGBT模块中文资料参数.。

第三章接线方法1.插座定义表3.1(a)～3.1(c)分别是CM-320、CM-300/310、CM-310A的背面插座定义表。

分析它们可以看出，J1～J3对于CM-300/310/310A/320都是一样的；而J5、J6为CM-320所独有（CM-300/310虽然有J5、J6，但并未实际使用）。

CM-310A的J4只有“启动”及其公共端，CM-300/310/320的J4定义是一样的。

表3.1(a) CM-320背面插座定义表3.1(b) CM-300/310背面插座定义表3.1(c ) CM-310A 背面插座定义2. 接线原理图3.1(a)～图3.1(c)分别是CM-310A 、CM-300/310、CM-320对外接线原理图。

图3.1(a) CM-310A 对外接线原理图系统侧PT PTAC 或在拍摄合闸波形时，作合闸输出信号用去报警回路去调速器调速回路去励磁调压回路现场合闸回路图3.1(b ) C M -300/310对外接线原理图现场合闸回路启动输无压选开入公共选择对象选择对象系统侧待并侧同期开入信号图3.1(c ) C M -320对外接线原理图现场合闸回路启动输无压选开入公共选择对象选择对象系统侧待并侧开入控制信号3.接线方法3.1 工作电源 (J1)接入可靠的AC220V或DC220V电源，其中，“大地”端应与现场的接地网可靠相连。

3.2 同期PT信号(J2)PT S、PT g分别为系统侧和待并侧电压信号输入。

对于机组型开关对象，PT S、PT g分别接入母线PT信号和机组PT信号；对于线路型对象，PT S、PT g分别接入线路侧PT信号和母线侧PT信号，应注意它们的同名端须一致。

通常两个PT接入的都是它们所对应的同名相的线电压（AC100V），否则应在设置同期定值时对其设置转角补偿及电压补偿值。

3.3 同期控制输出(J3)控制输出信号J3的引脚意义见表3.2，其中LB信号与同期合闸信号动作完全一致。

V CE = V CES , V GE = 0V V GE = V GES , V CE = 0V T j = 25°CT j = 125°C V CC = 600V, I C = 300A, V GE = 15VV CC = 600V, I C = 300A V GE1 = V GE2 = 15VR G = 1.0Ω, Inductive load switching operation I E = 300AI E = 300A, V GE = 0V IGBT part (1/2 module)*1FWDi part (1/2 module)*1Case to fin, Thermal compound Applied (1/2 module)*1,*2I C = 30mA, V CE = 10VI C = 300A, V GE = 15VV CE = 10V V GE = 0V1200±203006003006001890–40 ~ +150–40 ~ +12525003.5 ~ 4.53.5 ~ 4.5400HIGH POWER SWITCHING USEV V A A W °C °C V N • m g10.53.0—4740.9—550180600350250—3.80.0660.12—16mA µA nF nC ns µC V °C/W Ω——2.12.4———1350—————9.0———0.02———————————————————1.07V V 68ns I CES I GES C ies C oes C res Q G t d(on)t rt d(off)t ft rr (Note 1)Q rr (Note 1)V EC(Note 1)R th(j-c)Q R th(j-c)R R th(c-f)R GSymbol ParameterV GE(th)V CE(sat)*1 : Tc, Tf measured point is just under the chips.*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.Note 1. I E , V EC , t rr & Q rr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).2. Pulse width and repetition rate should be such that the device junction temp. (T j ) does not exceed T jmax rating.3. Junction temperature (T j ) should not increase beyond 150°C.Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage WeightG-E Short C-E ShortDC, T C = 80°C *1Pulse (Note 2)Pulse(Note 2)T C = 25°C *1Main terminal to base plate, AC 1 min.Main terminal M6Mounting holes M6Typical valueSymbol ParameterCollector current Emitter currentTorque strength ConditionsUnit Ratings V CES V GES I C I CMI E (Note 1)I EM (Note 1)P C (Note 3)T j T stg V iso———Unit Typ.Limits Min.Max.Test conditionsELECTRICAL CHARACTERISTICS (Tj = 25°C)ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)Collector cutoff current Gate-emitter threshold voltageGate leakage currentCollector-emitter saturation voltageInput capacitance Output capacitanceReverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall timeReverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistanceThermal resistanceHIGH POWER SWITCHING USEHIGH POWER SWITCHING USEHIGH POWER SWITCHING USE。