DATA SHEET
Product speci?cation
Supersedes data of 1996 Sep 10
1999May 21
DISCRETE SEMICONDUCTORS
BAS29; BAS31; BAS35General purpose controlled avalanche (double) diodes
book, halfpage
M3D088
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
FEATURES
?Small plastic SMD package
?Switching speed: max.50ns
?General application
?Continuous reverse voltage:
max.90V
?Repetitive peak reverse voltage:
max.110V
?Repetitive peak forward current:
max.600mA
?Repetitive peak reverse current:
max.600mA.
APPLICATIONS
?General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
General purpose switching diodes
fabricated in planar technology, and
encapsulated in small rectangular
plastic SMD SOT23 packages.
The BAS29 consists of a single diode.
The BAS31 has two diodes in series.
The BAS35 has two diodes with a
common anode.
MARKING
TYPE NUMBER MARKING CODE
BAS29L20 BAS31L21 BAS35L22PINNING
PIN
DESCRIPTION
BAS29BAS31BAS35 1anode anode cathode (k1)
2not connected cathode cathode (k2)
3cathode common connection common anode Fig.1 Simplified outline (SOT23) and symbols.
handbook, halfpage
21
3
a. Simplified outline. c. BAS31 diode.
b. BAS29 diode. d. BAS35 diode.
MAM233
1
2
3
1
2
3
1
2
n.c.
3
(double) diodes
BAS29; BAS31; BAS35
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).Note
1.Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER
CONDITIONS
MIN.MAX.UNIT
Per diode V RRM repetitive peak reverse voltage ?110V V R continuous reverse voltage ?
90V I F
continuous forward current
single diode loaded; see Fig.2;note 1
?250mA double diode loaded; see Fig.2;note 1
?150mA I FRM repetitive peak forward current ?
600
mA
I FSM
non-repetitive peak forward current
square wave; T j =25°C prior to surge; see Fig.4t =1μs ?10A t =100μs ?4A t =1s
?0.75A P tot total power dissipation T amb =25°C; note 1
?250mW I RRM repetitive peak reverse current ?
600mA E RRM repetitive peak reverse energy t p ≥50μs; f ≤20Hz; T j =25°C
?5mJ T stg storage temperature ?65+150°C T j junction temperature
?
150
°C
(double) diodes
BAS29; BAS31; BAS35
ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise speci?ed.THERMAL CHARACTERISTICS Note
1.Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER
CONDITIONS
MIN.MAX.UNIT
Per diode V F
forward voltage
see Fig.3I F =10mA ?750mV I F =50mA ?840mV I F =100mA ?900mV I F =200mA ?1V I F =400mA
? 1.25V I R
reverse current
see Fig.5V R =90V
?100nA V R =90V; T j =150°C
?100μA V (BR)R reverse avalanche breakdown voltage
I R =1mA
120170V C d diode capacitance f =1MHz; V R =0; see Fig.6
?35pF t rr
reverse recovery time
when switched from I F =30mA to I R =30mA; R L =100?;
measured at I R =3mA; see Fig.7
?
50
ns
SYMBOL PARAMETER
CONDITIONS
VALUE UNIT R th j-tp thermal resistance from junction to tie-point 360K/W R th j-a thermal resistance from junction to ambient
note 1
500
K/W
(double) diodes
BAS29; BAS31; BAS35
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.(1)Single diode loaded.(2)Double diode loaded.
Fig.2
Maximum permissible continuous forward current as a function of ambient temperature.
handbook, halfpage
0100
(1)
(2)
200
300
200
100
MBG440
T amb (o C)
I F (mA)Fig.3
Forward current as a function of forward voltage.
handbook, halfpage
02
600
200
400
MBH280
1
IF (mA)V F (V)
(1)
(2)
(3)
(1)T j =150°C; typical values.(2)T j =25°C; typical values.(3)T j =25°C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.T j =25°C prior to surge.
handbook, full pagewidth
MBH327
10
t p (μs)
1
I FSM (A)
102
10?1
104
102103
10
1
(double) diodes
BAS29; BAS31; BAS35
Fig.5
Reverse current as a function of junction temperature.
handbook, halfpage
10
200
MBH282100
T j (o C)
I R (μA)1
10?2
10?1
102
(1)(2)
(1)V R =90V; maximum values.(2)V R =90V; typical values.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
f =1MHz; T j =25°C.
handbook, halfpage
01020
30
V R (V)
40
C d (pF)30
10
20
MGD003
Fig.7 Reverse recovery voltage test circuit and waveforms.
(1)I R =3mA.
handbook, full pagewidth
t rr
(1)
I F t
output signal
t r
t
t p
10%
90%
V R
input signal V = V I x R R F S
R = 50S
?
I F
D.U.T.
R = 50i
?SAMPLING OSCILLOSCOPE
MGA881
(double) diodes
BAS29; BAS31; BAS35
PACKAGE OUTLINE
UNIT A 1max.b p c D E e 1H E L p Q w v REFERENCES
OUTLINE VERSION EUROPEAN PROJECTION
ISSUE DATE 97-02-28
IEC
JEDEC
EIAJ
mm
0.1
0.480.38
0.150.09
3.02.8
1.41.2
0.95
e 1.9
2.52.1
0.550.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)0.450.15
SOT23
b p
D e 1
e
A
A 1
L p
Q
detail X
H E
E w M v M A
B
A
B 01 2 mm
scale
A 1.10.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
(double) diodes
BAS29; BAS31; BAS35
DEFINITIONS LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Data Sheet Status Objective speci?cation This data sheet contains target or goal speci?cations for product development.Preliminary speci?cation This data sheet contains preliminary data; supplementary data may be published later.Product speci?cation This data sheet contains ?nal product speci?cations.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information
Where application information is given, it is advisory and does not form part of the speci?cation.
BAS29; BAS31; BAS35 (double) diodes
NOTES
BAS29; BAS31; BAS35 (double) diodes
NOTES
BAS29; BAS31; BAS35 (double) diodes
NOTES
? Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Internet: https://www.doczj.com/doc/e011308036.html,
1999
64
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115002/00/03/pp12 Date of release: 1999May 21Document order number: 939775005967