GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC–3 GHz
Features
I Dual Control Voltages
I Low Insertion Loss
I8 Lead Hermetic Surface Mount Package I Capable of Meeting MIL-STD Requirements5-11
AT002N5-11
Description
The AT002N5-11 is a GaAs
I C FET absorptive
attenuator.This device provides up to 50 dB variable attenuation from DC–3 GHz.Attenuation can be controlled by varying each of the two control bias voltages from 0 to -5 V.This attenuator is recommended for fast response AGC circuits in commercial and high reliability applications.
0.380 (9.65 mm)
(1.27 mm)
TYP.
0.200 (5.08 mm)
0.070 (1.78 mm)
0.075
(1.91 mm)
MAX.
Electrical Specifications at 25°C
1.All measurements made in a 50 ?system, unless otherwise specified.
2.Insertion loss changes by 0.003 dB/°C.
3.Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
4.DC = 300 kHz.
5.See Quality/Reliability section.
GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC–3 GHz
AT002N5-11
Insertion Loss vs. Frequency Frequency (GHz)0.4DC
1230.81.21.62.0
I n s e r t i o n L o s s (d B )
2.4+85?C
-55?C
Attenuation (By State) vs. Frequency
Frequency (GHz)
10
DC
123
20
30
40
50
A t t e n u a t i o n (d
B )
60
Relative Attenuation vs. Control Voltages
Relative Attenuation (dB)-5.0
DC
201030504060
-4.0-3.0
-2.0-1.0V 1 V 2 C o n t r o l V o l t a g e s (V )
F = 1 GHz, V P 1 = 3.5 V
Typical Performance Data
Typical Transfer Curve
Pin Out
J
V V 2
GND GND J 2Attenuation vs. 1.0 dB Compression Point
Attenuation (dB)
-50
10
5
15
25
20
30
051015P I N a t 1.0 d B
C o m p r e s s i o n (d B m )
20 F = 500 MHz
1.V P = FET pinchoff voltage.
Characteristic
Value
RF Input Power (RF In)10 mW > 500 MHz 0/-8 V Control 4 mW 50 MHz -8 V Control
Control Voltage (V C )+0.2 V , -10 V Operating Temperature (T OP )-55°C to +125°C Storage Temperature (T ST )-65°C to +150°C
Thermal Resistance (ΘJC )
25°C/W
Absolute Maximum Ratings
Attenuation
V 1V 2J 1–J 20-5Insertion Loss -5
Full Attenuation
Truth Table