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ATF55143

Agilent ATF-55143 Low Noise Enhancement Mode

Pseudomorphic HEMT in a

Surface Mount Plastic Package

Data Sheet

Description

Agilent Technologies’s ATF-55143is a high dynamic range, very low noise, single supply E-PHEMT housed in a 4-lead SC-70

(SOT-343) surface mount plastic package.

The combination of high gain,high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets, wireless data systems (WLL/RLL, WLAN and MMDS) and other systems in the 450 MHz to 6 GHz frequency range.

Features

?High linearity performance ?Single Supply Enhancement Mode Technology [1]?Very low noise figure ?Excellent uniformity in product specifications ?400 micron gate width

?Low cost surface mount small plastic package SOT-343 (4 lead SC-70)

?Tape-and-Reel packaging option available

Specifications

2 GHz; 2.7V, 10mA (Typ.)

?24.2 dBm output 3rd order intercept

?14.4 dBm output power at 1 dB gain compression ?0.6 dB noise figure ?17.7 dB associated gain

Applications

?Low noise amplifier for cellular/PCS handsets

?LNA for WLAN, WLL/RLL and MMDS applications

?General purpose discrete E-PHEMT for other ultra low noise applications

Note:

1.Enhancement mode technology requires positive Vgs, thereby eliminating the need for the negative gate voltage associated with conventional depletion mode devices.

Surface Mount Package SOT-343

Pin Connections and

Package Marking

SOURCE DRAIN

GATE

SOURCE

Note:

T op View . Package marking provides orientation and identification

“5F” = Device Code

“x” = Date code character identifies month of manufacture.

ATF-55143 Absolute Maximum Ratings [1]Absolute Symbol

Parameter

Units

Maximum

V DS Drain-Source Voltage [2]V 5V GS Gate-Source Voltage [2]V -5 to 1V GD Gate Drain Voltage [2]V 5I DS Drain Current [2]mA 100I GS Gate Current [5]

mA 1P diss Total Power Dissipation [3]mW 270P in max.RF Input Power [5]dBm 7T CH Channel Temperature °C 150T STG Storage Temperature °C -65 to 150θjc

Thermal Resistance [4]°C/W 235ESD (Human Body Model)V 200ESD (Machine Model)

Notes:

1.Operation of this device above any one of these parameters may cause permanent damage.

2.Assumes DC quiescent conditions.

3.Source lead temperature is 25°C. Derate

4.3mW/°C for T L > 87°C.

4.Thermal resistance measured using

150°C Liquid Crystal Measurement method.5.Device can safely handle +3 dBm RF Input Power as long as I GS is limited to 1 mA. I GS at P 1dB drive level is bias circuit dependent. See applications section for additional information.

Product Consistency Distribution Charts [6, 7]

V DS (V)

Figure 1. Typical I-V Curves. (V GS = 0.1 V per step)

I D S (m A )

0.4V 0.3V

0.5V

0.6V

0.7V

146537

706050

403020100

OIP3 (dBm)

Figure 2. OIP3 @ 2.7 V, 10 mA.LSL = 22.0, Nominal = 24.22223252426

300250200

150100500

GAIN (dB)

Figure 3. Gain @ 2.7 V , 10 mA.

USL = 18.5, LSL = 15.5, Nominal = 17.7

151716

1819200

160

120

NF (dB)

Figure 4. NF @ 2.7 V, 10 https://www.doczj.com/doc/de10613951.html,L = 0.9, Nominal = 0.6

0.43

0.630.530.830.730.93

240200160

120

400Notes:

6.between the upper and lower limits.

Distribution data sample size is 500 samples taken from 6 different wafers. Future wafers allocated to this product may have nominal values anywhere

ATF-55143 Electrical Specifications

T A = 25°C, RF parameters measured in a test circuit for a typical device Symbol

Parameter and Test Condition

Units

Min.

Typ.[2]

Max.

Vgs Vds = 2.7V, Ids = 10 mA V 0.30.470.65Vth Threshold Voltage Vds = 2.7V, Ids = 2 mA V 0.180.370.53Idss Saturated Drain Current Vds = 2.7V, Vgs = 0V μA —0.13Gm Transconductance Vds = 2.7V, gm = ?Idss/?Vgs;mmho 110220285?Vgs = 0.75–0.7 = 0.05V Igss Gate Leakage Current Vgd = Vgs = -2.7V μA ——95NF Noise Figure [1] f = 2 GHz Vds = 2.7V, Ids = 10 mA dB —0.60.9f = 900 MHz Vds = 2.7V, Ids = 10 mA dB —0.3—Ga Associated Gai n [1] f = 2 GHz Vds = 2.7V, Ids = 10 mA dB 15.517.718.5f = 900 MHz Vds = 2.7V, Ids = 10 mA dB —21.6—OIP3Output 3rd Order f = 2 GHz Vds = 2.7V, Ids = 10 mA dBm 22.024.2—Intercept Point [1] f = 900 MHz Vds = 2.7V, Ids = 10 mA dBm —22.3—P1dB

1dB Compressed f = 2 GHz Vds = 2.7V, Ids = 10 mA dBm —14.4—Output Power [1]

f = 900 MHz

Vds = 2.7V, Ids = 10 mA

dBm

—

14.2

—

Notes:

1.Measurements obtained using production test board described in Figure 5.

2.T ypical values determined from a sample size of 500 parts from 6 wafers.

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements.

Operational Gate Voltage

ATF-55143 Typical Performance Curves

Figure 6. Gain vs. Bias over Frequency.[1]

FREQUENCY (GHz)G A I N (d B )

012345601234560123456

Figure 8. OIP3 vs. Bias over Frequency.[1]

FREQUENCY (GHz)

O I P 3 (d B m )

27252321191715

Figure 9. IIP3 vs. Bias over Frequency.[1]FREQUENCY (GHz)I I P 3 (d B m

)

1510

-5

Figure 10. P1dB vs. Bias over Frequency.[1,2]

FREQUENCY (GHz)

P 1d B (d B m

)

1614

Figure 11. Gain vs. I ds and V ds at 2 GHz.[1]

I ds (mA)

G A I N (d B )

2120

1817

1615

Figure 13. OIP3 vs. I ds and V ds at 2 GHz.[1]I ds (mA)O I P 3

(d B m )

353331

2927252321

Figure 14. IIP3 vs. I ds and V ds at 2 GHz.[1]

I ds (mA)

I I P 3 (d B m )

161412108642

010

3015

Figure 7. Fmin vs. Frequency and Bias.

FREQUENCY (GHz)F m i n (d B )

1.21.00.8

0.60.4

0.20

Figure 12. Fmin vs. I ds and V ds at 2 GHz.

I ds (mA)F m i n

(d B )

0.600.550.50

0.450.400.350.300.250.20

Notes:

1.Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at

2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test board requirements. Measurements taken above stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP

3. Circuit losses have been de-embedded from actual measurements.2.P1dB measurements are performed with

passive biasing. Quiescent drain current, I dsq ,is set with zero RF drive applied. As P1dB is approached, the drain current may increase or point. At lower values of I dsq , the device is running close to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency)

when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a V DS =2.7V and I = 5 mA, I increases to 15mA as 0123456

012345605101520253035

035

105202530150

3015

ATF-55143 Typical Performance Curves , continued

Figure 15. P1dB vs. I dsq and V ds at 2 GHz.[1,2]I dsq (mA)P 1d B (d B m )

1716151413121110Figure 16. Gain vs. I ds and V ds at 900 MHz.[1]

I ds (mA)Figure 18. OIP3 vs. I ds and V ds at 900 MHz.[1]I ds (mA)O I P 3 (d B m )

323028262422201816Figure 19. IIP3 vs. I ds and V ds at 900 MHz.[1]

I ds (mA)I I P 3 (d B m )

765

43210-1

-2Figure 20. P1dB vs. I dsq and V ds at 900 MHz.[1,2]

I dsq (mA)

P 1d B (d B m )

17161514131211

9Figure 17. Fmin vs. I ds and V ds at 900 MHz.

I ds (mA)

Notes:

1.Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at

stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.2.P1dB measurements are performed with passive biasing. Quiescent drain current, I dsq ,is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I dsq , the device is running close to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency)

when compared to a device that is driven by a constant current source as is typically done

with active biasing. As an example, at a V DS

=2.7V and I dsq = 5 mA, I d increases to 15 mA as a P1dB of +14.5dBm is approached.

3540

05101520253035

3035

ATF-55143 Typical Performance Curves , continued

I I P 3 (d B m )

Figure 21. Gain vs. Temperature and Frequency with bias at 2.7V, 10 mA.[1]

FREQUENCY (GHz)G A I N (d B )

2145328

2318138

Figure 23. OIP3 vs. Temperature and Frequency with bias at 2.7V, 10 mA.[1]

FREQUENCY (GHz)

O I P 3 (d B m )

2524232221

Figure 24. IIP3 vs. Temperature and Frequency with bias at 2.7V, 10 mA.[1]FREQUENCY (GHz)

161412108

6420-2-4-6Figure 25. P1dB vs. Temperature and Frequency with bias at 2.7V, 10 mA.[1,2]

FREQUENCY (GHz)

P 1d B (d

B m )

16151413121110

Figure 22. Fmin vs. Frequency and Temperature at 2.7V, 10 mA.

FREQUENCY (GHz)F m i n (

d B )

2.0

1.5

1.0

0.5

Notes:

1.Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at

when compared to a device that is driven by a constant current source as is typically done

with active biasing. As an example, at a V DS

=2.7V and I dsq = 5 mA, I d increases to 15 mA as a P1dB of +14.5dBm is approached.

2145306

214530

21453

ATF-55143 Typical Scattering Parameters, V DS = 2V, I DS = 10 mA Freq. S 11 S 21 S 12 S 22MSG/MAG GHz

Mag.Ang.

Mag.

Ang.

Mag.Ang.

0.10.998-6.520.7810.941174.90.00686.10.796-4.232.610.50.963-31.720.3710.434154.80.02970.20.762-20.425.560.90.894-54.719.579.516137.10.04856.90.711-34.422.971.00.879-60.119.329.252133.00.051540.693-37.322.591.50.793-84.118.078.009115.20.06641.50.622-49.620.841.90.731-100.817.117.166102.80.07533.60.570-57.119.802.00.718-104.716.86 6.970100.10.07731.80.559-58.719.572.50.657-123.715.79 6.15986.60.08423.70.503-66.318.653.00.611-141.814.80 5.49474.20.09016.50.446-7317.864.00.561-177.513.10 4.51751.00.098 3.60.343-87.616.645.00.558149.411.52 3.76829.30.102-8.30.269-104.415.686.00.566122.510.06 3.1839.40.104-18.40.224-120.410.947.00.58399.78.78 2.748-9.20.106-28.50.189-137.39.338.00.60177.77.62 2.404-27.40.105-38.40.140-149.38.149.00.63657.5 6.63 2.147-45.30.110-44.70.084-1707.7210.00.70838.3 5.66 1.919-64.60.117-56.60.08109.38.0311.00.7621.8 4.45 1.670-83.10.119-68.20.15164.57.9012.00.7947.6 3.32 1.465-100.20.121-79.30.21740.87.6613.00.819-7.8 2.29 1.302-117.90.121-91.40.26220.87.3614.00.839-23.6 1.27 1.157-136.70.122-104.40.3270.57.0515.00.862-37.9-0.190.978-155.20.115-117.70.431-16.4 6.5216.00.853-51.0-1.830.810-171.80.109-129.40.522-28.6 5.2217.00.868-60.1-3.250.688173.90.107-139.90.588-41.6 4.9018.0

0.911

-70.3

-4.44

0.601

158.5

0.102

-153.2

0.641

-55.8

5.94

Freq F min Γopt Γopt R n/50

G a GHz

dB Mag.Ang.

0.50.210.6517.50.1324.840.90.260.6022.60.1222.861.00.270.5527.00.1222.391.90.420.5549.40.1118.772.00.430.5451.70.1118.422.40.500.4561.50.1017.143.00.590.4078.10.0915.503.90.730.26111.90.0713.625.00.920.21172.50.0612.055.8 1.040.24-151.50.0711.286.0 1.060.23-144.50.0811.127.0 1.220.28-107.10.1410.458.0 1.420.33-75.50.249.849.0 1.570.43-51.50.389.1010.0

1.710.54-33.30.578.03

Notes:

1.F min values at 2GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements F min is calculated. Refer to the noise parameter application section for more information.

2.S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source T ypical Noise Parameters, V DS = 2V, I DS = 10 mA Figure 26. MSG/MAG and |S 21|2 vs. Frequency at 2V, 10 mA.

FREQUENCY (GHz)

M S G /M A G a n d |S 21|2 (d B )

35302520151050-5-10

ATF-55143 Typical Scattering Parameters, V DS = 2V, I DS = 15 mA Freq. S 11 S 21 S 12 S 22MSG/MAG GHz

Mag.Ang.

Mag.

Ang.

Mag.Ang.

0.10.997-7.122.3313.074174.40.00685.70.752-4.633.380.50.953-34.521.8212.333153.00.02769.40.712-22.126.600.90.873-58.820.8611.042134.40.04456.30.654-36.724.001.00.856-64.620.5810.693130.30.04753.30.636-39.623.571.50.759-89.319.149.059112.20.06041.60.560-51.821.791.90.695-106.218.067.998100.00.06834.40.509-59.020.702.00.681-110.217.87.76297.20.07032.80.498-60.520.452.50.621-129.316.62 6.77383.90.07625.60.443-67.519.503.00.578-147.415.54 5.98571.80.08219.40.390-73.618.634.00.536177.313.71 4.85049.40.0917.90.295-87.317.275.00.541145.112.09 4.02028.40.096-3.00.225-104.316.226.00.554119.110.59 3.3849.00.101-12.70.183-120.810.477.00.57497.09.3 2.917-9.10.105-23.00.150-138.49.348.00.59475.58.13 2.549-27.00.106-33.10.101-149.78.329.00.6355.97.12 2.271-44.60.113-40.40.047-175.27.9910.00.70337.3 6.14 2.028-63.50.121-53.20.07882.08.3311.00.75721.1 4.92 1.762-81.70.123-65.30.16251.18.1912.00.7937.1 3.79 1.547-98.50.125-76.90.23131.37.9813.00.818-8.2 2.77 1.376-115.90.125-89.50.27512.87.6814.00.841-23.8 1.76 1.225-134.30.125-102.70.339-5.57.4315.00.863-38.10.32 1.038-152.50.118-116.30.438-21.0 6.8516.00.856-51.2-1.290.862-168.80.111-128.00.524-32.0 5.5817.00.871-60.2-2.660.736177.00.109-138.60.586-44.4 5.2718.0

0.913

-70.4

-3.8

0.646

161.7

0.105

-151.9

0.636

-58.1

6.28

Freq F min Γopt Γopt R n/50

G a GHz

Mag.

Ang.

0.50.210.62718.70.125.410.90.250.5623.60.123.471.00.260.5327.30.123.021.90.40.5149.70.0919.442.00.410.552.60.0919.092.40.480.4162.30.0917.813.00.570.3580.40.0816.173.90.70.22118.40.0614.255.00.860.2-176.50.0612.65.80.990.23-140.50.0811.776.0 1.030.23-134.60.0811.67.0 1.160.29-99.30.1410.868.0 1.350.35-69.30.2510.229.0 1.490.43-47.90.399.4810.0

1.62

0.54

-30.8

0.57

8.47

Notes:

1.F min values at 2GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F min is calculated.Refer to the noise parameter application section for more information.

2.S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source T ypical Noise Parameters, V DS = 2V, I DS = 15 mA Figure 27. MSG/MAG and |S 21|2 vs. Frequency at 2V, 15 mA.

FREQUENCY (GHz)

M S G /M A G a n d |S 21|2 (d B )

4035302520151050-5-10

ATF-55143 Typical Scattering Parameters, V DS = 2V, I DS = 20 mA Freq. S 11 S 21 S 12 S 22MSG/MAG GHz

Mag.Ang.

Mag.

Ang.

Mag.Ang.

0.10.997-7.523.2314.512174.20.00685.50.722-4.833.380.50.947-36.222.6613.582151.80.026690.679-22.926.600.90.858-61.321.5912.011132.80.041560.618-37.724.001.00.839-67.221.2911.602128.60.04453.20.599-40.623.571.50.738-92.419.749.703110.40.05642.10.523-52.521.791.90.673-109.418.598.598.30.06335.50.474-59.320.702.00.659-113.518.328.23895.50.065340.463-60.720.452.50.599-132.617.077.13582.40.07127.50.411-67.119.503.00.558-150.615.95 6.27270.50.07721.80.361-72.718.634.00.521174.414.06 5.04748.50.08611.10.272-85.617.275.00.531142.812.40 4.171280.0930.70.205-102.316.226.00.546117.410.89 3.5058.90.099-90.166-118.710.477.00.56895.69.60 3.021-90.104-19.40.134-136.59.348.00.58874.48.42 2.637-26.70.106-29.80.086-146.28.329.00.62555.27.41 2.348-44.10.115-37.50.032-171.27.9910.00.69936.8 6.43 2.097-62.90.123-50.70.07771.38.3311.00.75420.9 5.21 1.823-80.90.125-63.20.165468.1912.00.791 6.9 4.08 1.60-97.50.127-75.10.23527.67.9813.00.818-8.2 3.07 1.424-114.70.128-87.80.2789.87.6814.00.839-23.8 2.07 1.269-133.10.127-101.40.340-8.17.4315.00.864-38.10.65 1.078-1510.12-114.90.440-22.8 6.8516.00.858-51.1-0.950.896-167.30.113-126.80.523-33.4 5.5817.00.873-60.2-2.300.768178.60.111-137.50.583-45.6 5.2718.0

0.917

-70.4

-3.41

0.675

163.4

0.106

-150.9

0.632

-59

6.28

Freq F min Γopt Γopt R n/50

G a GHz

Mag.

Ang.

0.50.210.6318.40.125.670.90.250.5424.40.0923.781.00.260.5328.80.0923.341.90.390.4950.60.0919.842.00.40.4752.80.0919.52.40.480.3863.60.0818.243.00.560.32820.0716.613.90.690.2125.10.0614.675.00.850.2-167.20.0612.975.80.980.24-133.40.0812.096.0 1.020.24-128.40.0910.897.0 1.160.3-94.80.1511.128.0 1.340.36-66.40.2510.459.0 1.490.45-45.70.49.7310.0

1.62

0.55

-28.6

0.6

8.8

Notes:

1.F min values at 2GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F min is calculated.Refer to the noise parameter application section for more information.

2.S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier . Two 0.020 inch diameter via holes are placed T ypical Noise Parameters, V DS = 2V, I DS = 20 mA Figure 28. MSG/MAG and |S 21|2 vs. Frequency at 2V, 20 mA.

FREQUENCY (GHz)

M S G /M A G a n d |S 21|2 (d B )

4035302520151050-5-10

ATF-55143 Typical Scattering Parameters, V DS = 2.7V, I DS = 10 mA Freq. S 11 S 21 S 12 S 22MSG/MAG GHz

Mag.Ang.

Mag.

Ang.

Mag.Ang.

0.10.998-6.420.8611.044174.90.00686.20.819-3.932.650.50.963-31.220.4610.5491550.02670.40.786-19.126.080.90.896-53.819.689.641137.50.04357.30.737-3223.511.00.881-59.219.449.376133.40.04754.40.72-34.723.001.50.794-8318.218.133115.60.0642.20.651-4621.321.90.732-99.517.257.284103.30.06834.40.602-52.920.302.00.718-103.417.017.087100.60.0732.60.592-54.520.052.50.655-122.315.94 6.26787.10.07624.80.538-61.319.163.00.608-140.214.96 5.59974.80.08217.90.485-67.318.344.00.553-175.913.28 4.61551.70.089 5.60.39-80.117.155.00.548150.911.74 3.86230.20.092-5.40.321-94.716.236.00.556123.910.30 3.27210.30.094-14.60.280-10910.637.00.573100.99.04 2.83-8.30.096-23.90.247-124.19.278.00.59078.67.89 2.481-26.50.096-32.80.204-134.38.169.00.62558.4 6.94 2.224-44.30.102-380.152-146.77.8210.00.69939.2 6.03 2.002-63.60.112-49.70.098166.88.3411.00.75222.7 4.89 1.755-82.30.115-61.10.1121008.2412.00.7898.4 3.78 1.546-99.80.12-72.40.16762.38.1713.00.815-7 2.78 1.378-117.80.122-84.70.211377.9314.00.838-22.8 1.81 1.231-1370.124-98.30.27412.67.7115.00.862-37.20.37 1.044-155.90.119-111.80.387-7.67.1416.00.856-50.5-1.270.864-173.30.113-124.40.491-21.5 5.7817.00.872-59.7-2.730.730171.90.111-135.60.568-35.9 5.4918.0

0.915

-70

-3.96

0.634

156

0.107

-149.4

0.628

-51.2

6.84

Freq F min Γopt Γopt R n/50

G a GHz

dB Mag.Ang.

0.50.20.64190.1225.290.90.260.5922.70.1223.241.00.270.54260.1222.761.90.390.5448.30.1119.012.00.40.5449.90.1118.662.40.480.4559.80.117.353.00.570.3975.60.0915.693.90.720.26108.70.0713.795.00.880.2167.50.0612.265.8 1.020.22-154.80.0711.526.0 1.040.21-147.80.0811.377.0 1.190.26-107.90.1310.768.0 1.390.32-750.2310.29.0 1.540.41-51.60.369.4810.0

1.650.53-33.60.548.38

Notes:

1.F min values at 2GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F min is calculated.Refer to the noise parameter application section for more information.

2.S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source T ypical Noise Parameters, V DS = 2.7V, I DS = 10 mA Figure 29. MSG/MAG and |S 21|2 vs. Frequency at 2.7V, 10 mA.

FREQUENCY (GHz)

M S G /M A G a n d |S 21|2 (d B )

35302520151050-5-10

ATF-55143 Typical Scattering Parameters, V DS = 2.7V, I DS = 20 mA Freq. S 11 S 21 S 12 S 22MSG/MAG GHz

Mag.Ang.

Mag.

Ang.

Mag.Ang.

0.10.997-7.423.2914.603174.20.00585.80.755-4.434.650.50.947-35.822.7213.6821520.02469.20.713-21.127.560.90.860-60.821.6712.1161330.03856.20.652-34.625.041.00.840-66.621.3711.705128.80.04153.40.633-37.324.561.50.739-91.719.839.802110.60.05142.40.56-4822.841.90.672-108.618.688.58798.50.057360.513-5421.782.00.658-112.718.418.32395.80.05934.50.503-55.321.492.50.597-131.717.167.2182.70.06528.40.455-60.920.453.00.554-149.716.04 6.34170.90.069230.409-65.719.634.00.515175.414.17 5.11449.10.07813.30.328-76.718.175.00.523143.712.55 4.23928.60.084 3.70.267-90.717.036.00.538118.211.06 3.5729.60.09-50.232-104.810.287.00.55996.49.78 3.084-8.40.095-14.70.201-119.69.378.00.57975.28.62 2.699-25.90.098-24.20.162-127.48.509.00.615567.65 2.413-43.30.107-310.113-136.58.3110.00.69037.7 6.73 2.171-62.10.117-440.055160.98.8111.00.74821.7 5.57 1.9-80.30.122-56.40.09675.98.8512.00.7877.9 4.48 1.675-97.30.126-68.50.16445.58.7513.00.816-7.3 3.5 1.496-114.90.128-81.40.21023.78.6214.00.841-22.9 2.55 1.341-133.50.13-95.10.27738.4815.00.867-37.3 1.15 1.142-152.10.124-109.20.386-14.37.8416.00.862-50.5-0.440.95-1690.118-121.90.483-26.3 6.3917.00.877-59.7-1.830.81176.30.116-133.30.555-39.5 6.0818.0

0.921

-70

-2.99

0.709

160.6

0.111

-147.1

0.612

-53.9

7.60

Freq F min Γopt Γopt R n/50

G a GHz

dB Mag.Ang.

0.50.200.6517.60.125.790.90.250.5523.60.123.91.00.260.5328.30.123.451.90.390.49490.0919.942.00.40.4851.50.0919.62.40.470.38620.0818.343.00.560.3279.60.0716.713.90.690.191200.0614.85.00.850.18-168.80.0613.145.80.980.22-135.40.0812.36.0 1.010.22-128.70.0912.127.0 1.150.29-94.60.1511.388.0 1.320.35-66.70.2510.749.0 1.470.44-45.70.3810.0410.0

1.58

0.54

-28.6

0.57

9.1

Notes:

1.F min values at 2GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F min is calculated.Refer to the noise parameter application section for more information.

2.S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source T ypical Noise Parameters, V DS = 2.7V, I DS = 20 mA Figure 30. MSG/MAG and |S 21|2 vs. Frequency at 2.7V, 20 mA.

FREQUENCY (GHz)

M S G /M A G a n d |S 21|2 (d B )

4035302520151050-5

ATF-55143 Typical Scattering Parameters, V DS = 3V, I DS = 20 mA Freq. S 11 S 21 S 12 S 22MSG/MAG GHz

Mag.Ang.

Mag.

Ang.

Mag.Ang.

0.10.998-7.423.3414.697174.20.00585.10.763-4.334.680.50.947-35.922.7713.762151.90.02369.20.721-20.627.770.90.859-60.921.7112.178132.90.03756.20.661-33.825.171.00.839-66.721.4111.764128.70.03953.50.642-36.324.791.50.738-91.819.869.844110.50.05042.50.570-46.722.941.90.671-108.718.718.62198.50.05536.20.524-52.521.952.00.657-112.718.448.35495.70.05734.80.514-53.721.662.50.595-131.717.197.23382.70.06228.70.468-59.120.673.00.552-149.816.07 6.3670.90.06723.50.423-63.819.774.00.513175.414.2 5.1349.10.07514.20.345-74.318.355.00.521143.812.58 4.25628.70.081 4.90.287-87.711.976.00.536118.311.1 3.5889.70.087-3.50.254-101.610.257.00.55796.59.83 3.1-8.20.092-12.90.224-116.19.378.00.57775.38.67 2.715-25.80.095-22.10.187-124.38.519.00.61356.27.71 2.43-43.10.105-28.70.140-133.58.3910.00.68738 6.81 2.192-61.80.116-41.70.075-178.88.9611.00.74622 5.67 1.922-80.20.121-540.084949.0212.00.7878.1 4.59 1.697-97.20.126-66.10.14554.49.0613.00.816-7 3.62 1.516-114.90.128-79.10.191308.9314.00.842-22.6 2.67 1.36-133.60.131-930.25688.9215.00.869-37 1.3 1.161-152.30.126-107.20.369-10.98.2416.00.863-50.2-0.290.967-169.60.1200-120.20.471-23.5 6.6117.00.879-59.6-1.70.822175.60.118-131.90.548-37.3 6.3018.0

0.924

-69.8

-2.87

0.719

159.7

0.113

-145.9

0.608

-52.2

8.42

Freq F min Γopt Γopt R n/50

G a GHz

dB Mag.Ang.

0.50.180.6317.60.125.890.90.240.5423.40.123.981.00.250.5327.90.123.531.90.390.4848.40.09202.00.40.4751.60.0919.662.40.470.3961.90.0818.43.00.560.3278.70.0716.773.90.680.19119.80.0614.855.00.850.19-170.40.0613.215.80.970.22-135.10.0812.376.0 1.010.22-128.40.0912.27.0 1.140.28-94.70.1411.478.0 1.310.35-66.80.2510.849.0 1.470.44-45.60.3810.1510.0

1.59

0.54

-28.9

0.57

9.22

Notes:

1.F min values at 2GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F min is calculated.Refer to the noise parameter application section for more information.

2.S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source T ypical Noise Parameters, V DS = 3V, I DS = 20 mA Figure 31. MSG/MAG and |S 21|2 vs. Frequency at 3V, 20 mA.

FREQUENCY (GHz)

M S G /M A G a n d |S 21|2 (d B )

4035302520151050-5

ATF-55143 Typical Scattering Parameters, V DS = 3V, I DS = 30 mA Freq. S 11 S 21 S 12 S 22MSG/MAG GHz

Mag.Ang.

Mag.

Ang.

Mag.Ang.

0.10.996-7.924.316.407173.90.00585.60.729-4.535.160.50.937-38.123.6415.205150.40.02168.80.683-21.228.600.90.840-64.122.4413.246130.90.03456.10.620-34.325.911.00.819-70.122.1112.753126.60.03653.50.601-36.825.491.50.712-95.720.4310.507108.40.04643.40.531-46.523.591.90.646-112.819.29.11796.40.05137.70.488-51.822.522.00.631-116.818.918.82393.70.05236.60.479-52.922.302.50.571-135.817.597.57880.90.05731.30.437-57.721.243.00.531-153.916.42 6.62569.40.06226.60.398-61.820.294.00.499171.814.49 5.30348.10.07118.10.328-71.618.735.00.512140.912.84 4.38628.10.0789.20.273-84.711.266.00.52911611.35 3.6939.40.0850.70.242-98.510.127.00.55294.710.07 3.188-8.30.092-90.214-112.99.458.00.57373.98.91 2.79-25.60.096-18.60.179-120.58.679.00.60955.17.94 2.496-42.70.107-25.80.134-128.48.6010.00.68437.37.05 2.251-61.30.118-39.20.064-173.39.2011.00.74421.6 5.91 1.975-79.50.123-51.90.07587.59.2812.00.7867.9 4.83 1.744-96.40.128-64.30.14149.79.3613.00.816-7.2 3.86 1.56-113.90.131-77.50.18726.49.4014.00.842-22.8 2.93 1.401-132.60.133-91.70.250 5.19.3815.00.870-37.1 1.56 1.197-151.10.128-1060.367-12.68.5516.00.866-50.3-0.010.998-168.20.122-119.10.467-24.8 6.8617.00.882-59.7-1.40.8511770.12-130.80.543-38.2 6.5618.0

0.927

-69.9

-2.55

0.746

161.2

0.115

-144.8

0.602

-52.8

8.12

Freq F min Γopt Γopt R n/50

G a GHz

dB Mag.Ang.

0.50.190.5918.40.0926.270.90.250.525.50.0924.411.00.260.5230.70.0923.981.90.410.4450.60.0820.512.00.420.4354.50.0820.182.40.490.3465.10.0818.923.00.590.2784.70.0717.283.90.720.17132.60.0615.335.00.880.19-156.20.0613.615.8 1.020.24-125.30.0912.716.0 1.060.25-118.80.112.527.0 1.20.32-88.80.1711.738.0 1.370.39-62.70.2811.089.0 1.530.47-43.10.4310.4110.0

1.66

0.57

-27

0.65

9.58

Notes:

1.F min values at 2GHz and higher are based on measurements while the F mins below 2 GHz have been extrapolated. The F min values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F min is calculated.Refer to the noise parameter application section for more information.

2.S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via h oles connecting source T ypical Noise Parameters, V DS = 3V, I DS = 30 mA Figure 32. MSG/MAG and |S 21|2 vs. Frequency at 3V, 30 mA.

FREQUENCY (GHz)

M S G /M A G a n d |S 21|2 (d B )

4035302520151050-5

ATF-55143 Applications Information

Introduction

Agilent T echnologies’s ATF-55143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 6 GHz frequency range. As opposed t o a typical depletion mode PHEMT where the gate must be made negative with operation, an enhancement mode

Biasing an enhancement mode PHEMT is much like biasing the Instead of a 0.7V base to emitter voltage, the ATF-55143 enhance-ment mode PHEMT requires about a 0.47V potential between the gate and source for a nominal drain current of 10 mA.

Matching Networks

The techniques for im pedance matching an enhancement mode device are very similar to those for matching a depletion mode

the method of supplying gate bias. S and Noise Parameters for various bias conditions are listed shown in Figure 1 shows a typical LNA circuit normally used for

900 and 1900 MHz applications (Consult the Agilent Technologies website for application notes covering specific applications). networks consisting of L1/C1 and L4/C4 pr ovide the appropriate match for noise figure, gain, S11 and S22. The high pass structure

from the standpoint of improving out-of-band rejection.

Figure 1. Typical ATF-55143 LNA with Passive

Biasing.

Capacitors C2 and C5 pr ovide a

low impedance in-band RF

bypass for the matching net-

works. Resistors R3 and R4

provide a very important low

frequency termination for the

device. The resistive termination

improves low frequency stability.

the low frequency RF bypass for

resistors R3 and R4. Their value

should be chosen carefully as C3

and C6 also provide a termina-

tion for low frequency mixing

products. These mixing products

are as a result of two or more in-

band signals mixing and produc-

ing third order in-band distortion

difference mixing products are

terminated by C3 and C6. For

best suppression of third order

distortion products based on the

CDMA 1.25 MHz signal spacing,

C3 and C6 should be 0.1 μF in

value. Smaller values of capaci-

tance will not suppress the

generation of the 1.25 MHz

difference signal and as a result

will show up as poorer two tone

IP3 results.

Bias Networks

One of the major advantages of

the enhancement mode technol-

ogy is that it allows the designer

to be able to dc ground the

source leads and then merely

apply a positive voltage on the

gate to set the desired amount of

quiescent drain cur rent I d.

Whereas a depletion mode

PHEMT pulls maximum drain

current when V gs = 0V, an en-

hancement mode PHEMT pulls

only a small amount of leakage

current when V gs=0V. Only when

V gs is increased above V th, the

device threshold voltage, will

drain cur rent star t to flow. At a

V ds of 2.7V and a nominal V gs of

0.47V, the drain cur rent I d will be

sheet suggests a minimum and

maximum V gs over which the

desired amount of drain current

will be achieved. It is also impor-

tant to note that if the gate

terminal is left open circuited,

the device will pull some amount

of drain current due to leakage

current creating a voltage differ-

ential between the gate and

source terminals.

Passive Biasing

Passive biasing of the ATF-55143

is accomplished by the use of a

voltage divider consisting of R1

and R2. The voltage for the

divider is derived from the drain

voltage which provides a form of

voltage feedback through the use

of R3 to help keep drain current

constant. Resistor R5 (approxi-

mately 10k?) is added to limit

the gate current of enhancement

mode devices such as the

ATF-55143. This is especially

important when the device is

driven to P1dB or P SAT.

Resistor R3 is calculated based

on desired V ds, I ds and available

power supply voltage.

R3 =

– V ds

(1)

I ds + I

is the power supply voltage.

V ds is the device drain to source

voltage.

I ds is the desired drain current.

is the current flowing through

respect to the source for proper PHEMT requires that the gate be made more positive than the source for normal operation. Therefore a negative power supply voltage is not required for an enhancement mode device.

typical bipolar junction transistor.

device. The only difference is in

in this data sheet. The circuit High pass impedance matching also provides low frequency gain reduction which can be beneficial Capacitors C3 and C6 provide

products. The low frequency or

approximately 10 mA. The data

the R1/R2 resistor voltage

The values of resistors R1 and R2are calculated with the following formulas R1 = V gs (2)

I BB

R2 =

(V ds – V gs ) R1

(3)

V gs

Example Circuit V DD = 3V V ds = 2.7V I ds = 10 mA V gs = 0.47V

Choose I BB to be at least 10X the normal expected gate leakage current. I BB was conservatively chosen to be 0.5mA for this

example. Using equations (1), (2),and (3) the resistors are calcu-lated as follows R1 = 940?R2 = 4460?R3 = 28.6?

Active Biasing

Active biasing provides a means of keeping the quiescent bias point constant over temperature and constant over lot to lot variations in device dc perfor-mance. The advantage of the

active biasing of an enhancement mode PHEMT versus a depletion mode PHEMT is that a negative power source is not required. The techniques of active biasing an enhancement mode device are very similar to those used to bias

Figure 2. T ypical A TF-55143 LNA with ActiveBiasing.

constant voltage source at the base of a PNP transistor at Q2.The constant voltage at the base of Q2 is raised by 0.7 volts at the emitter. The constant emitter voltage plus the regulated V DD supply are present across resis-tor R3. Constant voltage across R3 provides a constant current Resistors R1 and R2 are used to set the desired Vds. The com-bined series value of these

resistors also sets the amount of extra current consumed by the bias network. The equations that describe the circuit’s operation are as follows.

V E = V ds + (I ds ? R4) (1)R3 = V DD – V E (2)

I ds

V B = V E – V BE (3)

V B = R1 V DD

(4)

R1 + R2V DD = I BB (R1 + R2) (5)Rearranging equation (4)

provides the following formula R2 = R 1 (V DD – V B ) (4A)

V B

and rearranging equation (5)provides the following formula R1 = V DD

(5A)

I BB (1 +

V DD – V B )

V B

V DD = 3V I BB = 0.5 mA V ds = 2.7V I ds = 10 mA R4 = 10?V BE = 0.7V

Equation (1) calculates the

required voltage at the emitter of the PNP transistor based on desired V ds and I ds through resistor R4 to be 2.8V. Equation (2) calculates the value of resis-tor R3 which determines the drain current I ds . In the example R3=20?. Equation (3) calculates the voltage required at the

junction of resistors R1 and R2.This voltage plus the step-up of the base emitter junction deter-mines the regulated V ds . Equa-tions (4) and (5) are solved

simultaneously to determine the value of resistors R1 and R2. In the example R1=4200? and R2=1800?. R7 is chosen to be 1k ?. This resistor keeps a small amount of current flowing

through Q2 to help maintain bias stability. R6 is chosen to be

10k ?. This value of resistance is necessary to limit Q1 gate

current in the presence of high RF drive levels (especially when Q1 is driven to the P 1dB gain a low frequency bypass to keep noise from Q2 effecting the operation of Q1. C7 is typically 0.1μF.

a bipolar junction transistor.

An active bias scheme is shown in Figure 2. R1 and R2 provide a supply for the drain current.Example Circuit

compression point). C7 provides

ATF-55143 Die Model

NFET=yes PFET=no

Vto=0.3

Beta=0.444 Lambda=72e-3 Alpha=13

Tau=

Tnom=16.85 Idstc=

Ucrit=-0.72 Vgexp=1.91 Gamds=1e-4 Vtotc= Betatce=

Rgs=0.5 Ohm Rf=

Gscap=2

Cgs=0.6193 pF

Cgd=0.1435 pF

Gdcap=2

Fc=0.65

Rgd=0.5 Ohm

Rd=2.025 Ohm

Rg=1.7 Ohm

Rs=0.675 Ohm

Ld=

Lg=0.094 nH

Ls=

Cds=0.100 pF

Rc=390 Ohm

Crf=0.1 F

Gsfwd=

Gsrev=

Gdfwd=

Gdrev=

R1=

R2=

Vbi=0.95

Vbr=

Vjr=

Is=

Ir=

Imax=

Xti=

Eg=

Fnc=1 MHz

R=0.08

P=0.2

C=0.1

Taumdl=no

wVgfwd=

wBvgs=

wBvgd=

wBvds=

wldsmax=

wPmax=

AllParams=

Advanced_Curtice2_Model

MESFETM1

T=0.15 mil

TanD=0

Rough=0 mil ATF-55143 ADS Package Model

Figure 3. Adding Vias to the ATF-55143 Non-Linear Model for Comparison to Measured S and Noise Parameters.

Designing with S and Noise

Parameters and the Non-Linear Model The non-linear model describing the ATF-55143 includes both the die and associat ed package model. The package model

includes the effect of the pins but does not include the effect of the additional source inductance associated with grounding the source leads through the printed circuit board. The device S and Noise Parameters do include the effect of 0.020inch thickness printed circuit board vias. When between the measured S param-

linear model, be sure to include the effect of the printed circuit board to get an accurate compari-son. This is shown schematically in Figure 3.

For Further Information

The information presented here is ATF-55143 enhancement mode PHEMT . More detailed application circuit information is available from Agilent Technologies.Consult the web page or your local Agilent Technologies sales representative.

VIA2VIA2V2

D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0W=40.0 mil

T=0.15 mil Rho=1.0W=40.0 mil

H=25.0 mil Er=9.6Mur=1

Cond=1.0E+50Hu=3.9e+034 mil T=0.15 mil TanD=0

Rough=0 mil

VIA2V3

D=20.0 mil H=25.0 mil T=0.15 mil comparing simulation results eters and the simulated non-an introduction to the use of the

Noise Parameter Applications Information

F min values at 2GHz and higher are based on measurements while t he F mins below 2 GHz ha ve been extrapolated. The F min values are based on a set of

16noise figure measurements

F min is calculated. F min repre-sents the true minimum noise figure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50?, to an impedance represented by the reflection coefficient Γo. The designer must design a matching network that will present Γo to the device with minimal associ-ated circuit losses. The noise figure of the completed amplifier is equal to the noise f igure of the device plus the losses of the matching netw ork preceding the device. The noise figure of the device is equal to F min only when the device is present ed with Γo. If

the ref lection coefficient of the

, then the noise figure of the

device will be g reater than F min

based on t he following equation.

NF = F min + 4 R n |Γs – Γo | 2

Zo (|1 + Γo|2)(1 -|Γs|2)

Where R n/Z o is the normalized

noise resistance, Γo is the opti-

mum reflection coefficient

required to produce F min and Γs is

the reflection coefficient of the

source impedance actually

presented to the device. The

losses of the matching networks

are non-zero and they will also

add to the noise figure of the

device creating a higher amplifier

noise figure. The losses of the

matching networks are related to

the Q of the components and

associated printed circuit board

loss. Γo is typically fairly low at

higher frequencies and increases

as frequency is lowered. Larger

gate width devices will typically

have a lower Γo as compared to

narrower gate width devices.

Typically for FETs, the higher Γo

usually infers that an impedance

much higher than 50? is required

for the device to produce F min. At

VHF frequencies and even lower

L Band frequencies, the required

impedance can be in the vicinity

of several thousand ohms. Match-

ing to such a high impedance

requires very hi-Q components in

order to minimize circuit losses.

As an example at 900 MHz, when

airwound coils (Q>100) are used

for matching networks, the loss

can still be up to 0.25 dB which

will add directly to the noise

figure of the device. Using multi-

layer molded inductors with Qs in

the 30 to 50 range results in

additional loss over the airwound

coil. Losses as high as 0.5 dB or

greater add to the typical 0.15 dB

F min of the device creating an

amplifier noise figure of nearly

0.65 dB. A discussion concerning

calculated and measured circuit

losses and their effect on ampli-

fier noise figure is covered in

Agilent Technologies Application

1085.

made at 16 different impedances

using an ATN NP5 test system.

From these measurements, a true

matching network is other than

DIMENSIONS ARE IN MILLIMETERS (INCHES)

DIMENSIONS

MIN.

0.80 (0.031)

0 (0)

0.25 (0.010)

0.10 (0.004)

1.90 (0.075)

2.00 (0.079)

0.55 (0.022)

0.450 TYP (0.018)

1.15 (0.045)

0.10 (0.004)

MAX.1.00 (0.039)0.10 (0.004)0.35 (0.014)0.20 (0.008)2.10 (0.083)2.20 (0.087)0.65 (0.025)1.35 (0.053)0.35 (0.014)10SYMBOL

A A1b C D E e h E1L θPackage Dimensions Outline 43

SOT -343 (SC70 4-lead)

Ordering Information Part Number

No. of Devices

Container

ATF-55143-TR130007” Reel ATF-55143-TR21000013” Reel ATF-55143-BLK

100

antistatic bag

https://www.doczj.com/doc/de10613951.html, Data subject to change.

END VIEW

TOP VIEW

(COVER TAPE THICKNESS)

DESCRIPTION

SYMBOL SIZE (mm)SIZE (INCHES)LENGTH WIDTH DEPTH PITCH

BOTTOM HOLE DIAMETER A 0B 0K 0P D 1 2.24 ± 0.102.34 ± 0.101.22 ± 0.104.00 ± 0.101.00 + 0.250.088 ± 0.0040.092 ± 0.0040.048 ± 0.0040.157 ± 0.0040.039 + 0.010CAVITY

DIAMETER PITCH POSITION D P 0E 1.55 ± 0.054.00 ± 0.101.75 ± 0.100.061 ± 0.0020.157 ± 0.0040.069 ± 0.004PERFORATION

WIDTH

THICKNESS W t 18.00 ± 0.300.255 ± 0.0130.315 ± 0.0120.010 ± 0.0005CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION)CAVITY TO PERFORATION (LENGTH DIRECTION)

F P 2

3.50 ± 0.052.00 ± 0.05

0.138 ± 0.0020.079 ± 0.002

DISTANCE

WIDTH

TAPE THICKNESS

C T t 5.4 ± 0.100.062 ± 0.0010.205 ± 0.0040.0025 ± 0.00004COVER TAPE Device Orientation

T ape Dimensions For Outline 4T