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February 2005
STP130NS04ZB
STB130NS04ZB - STW130NS04ZB
N-CHANNEL CLAMPED - 7 m ? - 80A TO-220/D2PAK/TO-247
FULLY PROTECTED MESH OVERLAY? MOSFET
Table 1: General Features
s TYPICAL R DS (on) = 7 m ?s 100% AVALANCHE TESTED
s LOW CAPACITANCE AND GATE CHARGE s
175°C MAXIMUM JUNCTION TEMPERATURE
DESCRIPTION
This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout.The inherent benefits of the new technology cou-pled with the extra clamping capabilities make this product particularly suitable for the harshest oper-ation conditions such as those encountered in the automotive environment .Any other application re-quiring extra ruggedness is also recommended.APPLICATIONS
s HIGH SWITCHING CURRENT s LINEAR APPLICATIONS
Table 2: Order Codes
TYPE V DSS R DS(on)I D STP130NS04ZB STB130NS04ZB STW130NS04ZB
CLAMPED CLAMPED CLAMPED
< 9 m ?< 9 m ?< 9 m ?
80 A 80 A 80 A
Sales Type Marking Package Packaging STP130NS04ZB P130NS04ZB TO-220TUBE STB130NS04ZBT4B130NS04ZB D 2PAK TAPE & REEL
STW130NS04ZB
W130NS04ZB
TO-247
TUBE
Rev. 2
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Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
Table 4: Thermal Data
(*)When mounted on 1 inch 2 FR4 2oZ Cu
Table 5: Avalanche Characteristics
Symbol Parameter
Value Unit V DS Drain-source Voltage (V GS = 0)
CLAMPED V V DG Drain-gate Voltage CLAMPED V V GS Gate- source Voltage
CLAMPED
V I D Drain Current (continuous) at T C = 25°C 80A I D Drain Current (continuous) at T C = 100°C 60A I DG Drain Gate Current (continuous)± 50mA I GS Gate Source Current (continuous)± 50mA I DM ( )Drain Current (pulsed)320A P TOT Total Dissipation at T C = 25°C 300W Derating Factor
2.0W/°C V ESD(G-S)
Gate-Source ESD(HBM-C=100 pF, R=1.5 K ?)4KV T j T stg
Max Operating Junction Temperature Storage Temperature
-55 to 175
°C
TO-220
D2PAK TO-247
Unit Rthj-case Thermal Resistance Junction-case Max 0.50
°C/W Rthj-pcb (*)Thermal Resistance Junction-pcb Max --35--°C/W
Rthj-a Thermal Resistance Junction-ambient Max 62.5
--50
T l
Maximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec)
300°C
Symbol Parameter
Max Value
Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)
80A E AS
Single Pulse Avalanche Energy
(starting T j = 25 °C, I D = I AR , V DD = 30 V)
500
mJ
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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
ELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)Table 6: On /Off
Table 7: Dynamic
Table 8: Source Drain Diode
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.(2) Pulse width limited by safe operating area.
Symbol Parameter
Test Conditions
Min.Typ.
Max.
Unit V (BR)DSS Clamped Voltage I D = 1 mA, V GS = 0-40 < Tj < 175 °C 33
V I DSS Zero Gate Voltage
Drain Current (V GS = 0)V DS = 16 V,Tj = 25 °C V DS = 16 V,Tj = 125 °C 10100μA μA I GSS Gate-body Leakage Current (V DS = 0)V GS = ±10 V,Tj = 25 °C 10
μA V GSS Gate-Source
Breakdown Voltage I GS = ±100 μA 18V V GS(th)Gate Threshold Voltage V DS = V GS = I D = 1 mA 2
4V R DS(on)
Static Drain-source On Resistance
V GS = 10 V ,I D = 40 A
7
9
m ?
Symbol Parameter
Test Conditions
Min.
Typ.Max.
Unit g fs Forward
Transconductance V DS = 15 V, I D = 40 A
50S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V, f = 1MHz, V GS = 0
27001275285pF pF pF t d(on)t f t d(off)t f Turn-on Delay Time Fall Time
Turn-off Delay Time Fall Time
V DD = 17.5 V, I D = 40 A,
R G = 4.7 ?, V GS = 10 V (see Figure 15)40220170100ns ns ns ns Q g Q gs Q gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge
V DD = 20 V, I D = 80 A,V GS = 10 V (see Figure 17)
802027
105nC nC nC
Symbol Parameter
Test Conditions
Min.
Typ.
Max.Unit I SD I SDM (2)Source-drain Current
Source-drain Current (pulsed)80320A A V SD (1)Forward On Voltage I SD = 80 A, V GS = 0 1.5
V t rr Q rr I RRM
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
I SD = 80 A, di/dt = 100A/μs V DD = 25V, T j = 150°C (see Figure 16)
900.184
ns μC A
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Figure 3: Safe Operating Area
Figure 6: Thermal Impedance
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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Figure 9: Gate Charge vs Gate-source Voltage
Figure 12: Normalized On Resistance vs Tem-
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
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Figure 15: Switching Times Test Circuit For Resistive Load
Figure 16: Test Circuit For Diode Recovery Be-haviour
Figure 17: Gate Charge Test Circuit
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TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)* D2PAK FOOTPRINT
* on sales type
DIM.
mm inch
MIN.MAX.MIN.MAX.
A33012.992
B 1.50.059
C12.813.20.5040.520
D20.20795
G24.426.40.960 1.039
N100 3.937
T30.4 1.197
BASE QTY BULK QTY
10001000
REEL MECHANICAL DATA DIM.
mm inch
MIN.MAX.MIN.MAX.
A010.510.70.4130.421
B015.715.90.6180.626
D 1.5 1.60.0590.063
D1 1.59 1.610.0620.063
E 1.65 1.850.0650.073
F11.411.60.4490.456
K0 4.8 5.00.1890.197
P0 3.9 4.10.1530.161
P111.912.10.4680.476
P2 1.9 2.10.0750.082
R50 1.574
T0.250.350.00980.0137
W23.724.30.9330.956
TAPE MECHANICAL DATA
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Table 9: Revision History
Date Revision Description of Changes 10-June-20041First Release.
14-Jan-20052Inserted D2PAK, Complete version.
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