New Generation of High – Power Semiconductor Closing Switches for
Pulsed Power Applications
I. Introduction
Solid state semiconductor switches are very inviting to use at pulsed power systems because these switches have high reliability, long lifetime, low costs during using, and environmental safety due to mercury and lead are absent. Semiconductor switches are able to work in any position, so, it is possible to design systems as for stationary laboratory using, and for mobile using. Therefore these switches are frequently regarded as replacement of gas-discharge devices – ignitrons, thyratrons, spark gaps and vacuum switches that generally use now in high-power electrophysical systems including power lasers.
Traditional thyristors (SCR) are semiconductor switches mostly using for pulse devices. SCR has small value of forward voltage drop at switch-on state, it has high overload capacity for current, and at last it has relatively low cost value due to the simple bipolar technology. Disadvantage of SCR is observed at switching of current pulses with very high peak value and short duration. Reason of this disadvantage is sufficiently slow process of switch-on state expansion from triggering electrode to external border of p-n junction after triggering pulse applying. This SCR feature is defined SCR using into millisecond range of current switching. Improvement of SCR pulse characteristics can be reached by using of the distributed gate design. This is allowed to decrease the time of total switch-on and greatly improve SCR switching capacity. Thus, ABB company is expanded the semiconductor switch using up to microsecond range by design of special pulse asymmetric thyristors (ASCR). These devices have distributing gate structure like a GTO. This thyristor design and forced triggering mode are obtained the high switching capacity of thyristor (p I =150kA, p T =50μs, di/dt = 18kA/μs, single pulse). However, in this design gate structure is covered large active area of thyristor (more than 50%) that decrease the efficiency of Si using and increase cost of device.
Si-thyristors and IGBT have demonstrated high switching characteristics at repetitive mode. However, such devices do not intend for switching of high pulse currents (tens of
kiloamperes and more) because of well-known physical limits are existed such as low doping of emitters, short lifetime of minority carriers, small sizes of chips etc.
Our investigation have obtained that switches based on reverse – switched dinistors are more perspective solid-state switches to switch super high powers at microsecond and submillisecond ranges. Reverse –switched dinistors (RSD) is two-electrode analogue of reverse conducting thyristor with monolithical integrated freewheeling diode in Si. This diode is connected in parallel and in the back direction to the thyristor part of RSD. Triggering of RSD is provided by short pulse of trigger current at brief applying of reversal voltage to RSD. Design of RSD is made thus that triggering current passes through diode areas of RSD quasiaxially and uniformly along the Si structure area. This current produces the oncoming injection of charge carriers from both emitter junctions to base regions and initiates the regenerative process of switch-on for RSD thyristor areas. Such method of triggering for this special design of Si plate is provided total and uniform switching of RSD along all active area in the very short time like as diode switch-on. The freewheeling diode integrated into the RSD structure could be used as damping diode at fault mode in the discharge circuit. This fault mode such as breakdown of cable lines can lead to oscillating current through switch..
It has been experimentally obtained in that semiconductor switches based on RSD can work successfully in the pulsed power systems to drive flash lamps pumping high-power neodymium lasers. It was shown in that RSD-switches based on RSD wafer diameter of 63 mm (switch type KRD-25-100) and RSD-switches based on RSD wafer diameter of 76 mm (switch type KRD-25-180) can switch the current pulses with submillisecond duration and peak value of 120 kA and 180 kA respectively. Three switches (switch type KRD – 25-180) connected in parallel were successfully tested under the following mode: operating voltage V= 25 kV, operating current Ip = 470 kA, and transferred charge Q = 145 Coulombs.
o
During 2000 – 2001, the capacitor bank for neodymium laser of facility LUCH was built at RFNC-VNIIEF. This bank including 18 switches type KRD-25-100 operates successfully during 5 years without any failures of switches.
This report is submitted results of development of new generation of solid state switches having low losses of power and high-current switching capacity.
II. Development of RSD’s next generation
The technology of fabrication of new RSD structure has been developed to increase the switching capacity. This new structure is SPT (Soft Punch Through)-structure - with “soft” closing of space-charge region into buffer n'-layer.
Decreasing of n-base thickness and also improving of RSD switch-on uniformity by good spreading of charge carriers on the n'-layer at voltage inversion are provided decreasing of all components of losses energy such as losses at triggering, losses at transient process of switch-on, and losses at state-on. Our preliminary estimation was shown that such structure must provide the increasing of operating peak current through RSD approximately in 1.5 times.
Investigations were carried out for RSD with blocking voltage of 2.4 kV and Si waferdiameters of 63, 76, and 100 mm by special test station. The main goal of these investigations is definition of maximum permissible level of peak current passing through single RSD with given area. Current passing through RSD and voltage drop on RSD structure during current passing are measured at testing. In Fig.1 waveforms of peak currents and voltage drops is shown for RSD with size of 76 mm and blocking voltage of 2.4 kV.
Fig.1. Waveforms of pulse current (a) and voltage drop (b) for RSD with wafer size of 76 mm and
blocking voltage of 2.4 kV
In according with study program current was slowly increased until maximum permissible level Ipm. When this level was reached the sharp rise of voltage and than the same sharp decay of voltage for curve U(t) was observed. Reason of voltage rise is strong decreasing of carrier mobility at high temperature, and reason of voltage decay is quick modulation of channel conductivity by thermal generated plasma that is appeared in accordance with sharp exponential dependence for own concentration of initial silicon into base areas of RSD at temperature of 400 – 0600C.
Tests were shown that this sharp rise of voltage at maximum permissible current does not lead to immediate fault of RSD. RSD keeps its blocking characteristic. However, after passing of such current pm I we can observe the appearance of erosion from cathode for aluminum
metallization of RSD contacts, and this fact is evidence of borderline state of device. The subsequent increasing of current (more than pm I ) leads to fusing of Si structure. Therefore,
level Ipm is the reference position to define the value of operation peak current for RSD-switch under long and repeated many times operating mode.
We have determined that operating peak current pw I must be less than 80% from level pm I . This ratio was confirmed by calculations and results of tests under pw I mode (several thousands of shots).
Data of test results for new generation of RSD with the various diameter of Si wafer are shown in Table 1. In this Table for comparing results of the same tests for the first generation of RSD with size of 63 and 76 mm are shown.
III. Switches based on RSD of new generation
New reverse – switched dinistors is manufactured in two variants. RSD of the first variant is in the low-profile metal-ceramic housing. The second variant is RSD fabricated without housing and with additional protection of periphery area from external action.
Dinistors placed into housing can be used for work under as mono - pulse mode and repeated - pulse mode. If repeated-pulsed mode using the forced cooling of semiconductor devices and using of heatsinks to both side of pellet must be made. Dinistors without housing
connects in series, and such assembly could be placed into a single compact housing. However, such assembly can work under mono-pulse mode only.
Operating voltage for switch typically exceeds blocking voltage of single RSD (BO U ≤2400V), thus switch is included several RSDs connected in series. Fig.2. Reverse –
switched dinistors for peak current from 200 kA to 500 kA and blocking voltage of 2400 V , encapsullated in hermetic metal – ceramic housing and without housing (RSD sizes of 64, 76, and 100 mm).
Number of RSDs included in assembly depends on operating voltage of switch. Therefore, technical problem of switch development is mainly optimization of design for assembly of several dinistors connected in series. A lot of special investigations have carried out such as choice of optimum materials to provide best contacts between RSDs, calculation of dynamic forces to clamp assembly, etc. These investigations are provided small and stable transition electrical and thermal resistances between RSDs that guarantees long and reliable performance of switch. Especial computer technique has developed to select RSDs for connection in series. At this RSD selection value of leakage current and stability of blocking volt-amps diagram are measured especially. This selection technique is allowed exclude the voltage dividers using for equalization of static voltage for each RSD at assembly. Thus, after such selection switch design can simplify, sizes of switch are increased approximately in 1.5 times, and cost of switch is increased too.
This solid state switch has operating voltage of up to 25 kVdc, operating peak current of up to 300 kA at current pulse duration of up to 500 μs. RFNC -VNIIEF plans to use such switch at capacitor bank of laser facili ty “Iskra -6”. This switch is included 15 RSDs with size of 76 mm and blocking voltage of 2.4 kV connected in series and encapsullated into dielectric housing. Very high level of switched power density per volume unit has reached by this switch design. This value is of 2.5 610W/3cm , and this value is exceeded in the several times the same switches based on pulse thyristors.
Triggering of all RSDs in switch is provided by the single trigger generator which connected to switch in parallel. Triggering current passes simultaneously through all RSDs
connected in series. Such triggering type is allowed to increase efficiency and reliability of triggering circuit for this switch, and this is one more advantage of RSD –switch compared to switch based on thyristors.
For new generation of RSD trigger current has peak value between 1-1.5 kA at pulse duration between 1.5 –2 μs. These values are less in 2-3 times compared to values of trigger current for RSD of the first generation.
IV. Conclusion
Next generation of reverse-switched dinistors and RSD – switches has been developed Tests of these switches are shown that all –time high level of switched power density per volume unit has reached. The switches are able to work under as mono-pulse and pulse-repeated modes and suitable for many applications of pulsed power.
应用于脉冲电源设备的新一代高功率半导体关闭开关
一导言
固态半导体开关普遍使用在脉冲功率系统，因为这些开关具有可靠性高，寿命长，使用成本低，并且由于汞和铅的量少能够保证环境的安全。半导体开关可以在任何位置工作，所以，它可以在固定的实验室使用，并可以为移动设备设计系统。因此这些开关被频繁的看作是可以替代气体放电装置、放电管、闸流管，火花隙缝隙和现在普遍使用的高能量电板系统包括功率激光器的真空开关。
传统的晶闸管是大多应用在脉冲设备的半导体开关。它在早前的正向电压下拉开关的状态有小的价值，它对电流具有超负荷的能力，最后它由于简单的两极技术它拥有相对较低的成本价值。它的缺点是高峰值的电流脉冲和较短的持续时间。导致这种缺点的原因是在触发脉冲设置后从触发电极到到外部连接进程十分缓慢。它的这种特征使得它应用在现时配电的毫秒范围内。改进晶闸管脉冲的特点可以通过改进分布式门设计达到效果。这就允许减少总的接通时间和极大提高配电的能力。因此，ABB公司扩大半导体开关的使用一直到对特别脉冲的不均匀晶闸管的微秒范围的设计。这些装置分布闸门的结构类似于GTO。这个晶闸管的设计和强迫的触发模式获得晶闸管的高配电能力。然而，这个门的结构覆盖了晶闸管的大活动面积，从而降低了硅利用的效率并增加了装置的成本。
硅晶闸管和IGBT已经证明在重复模式下的高配电特性。然而，这样的设备因为众所周知的屋里限制不打算供给高脉冲电流的配电普遍存在，如存在使用兴奋剂的排放低，少数载流子的载波寿命短，小尺寸的芯片等。
我们的调查已取得的基于逆向的接通在毫秒和微妙范围内接通显现为从使用电晶体管转换为接通高能量开关。逆向在硅里的综合的单片电路惯性滑行的二极管逆向的晶闸管是两极类似物。这个二极管平行的连接，在后方与RSD的晶闸管部分连接。触发RSD 为提供短期触发脉冲电流简短逆转的应用电压区。RSD的设计触发电流通过二极管领域的相对标准偏差和均匀沿着硅的结构范围。目前生产的这即将来临的电荷携带者的生产过程从发射连接到基本区域和启动再生过程开关上的RSD为晶闸管地区。这种提供RSD 开关的总和或统一的设置对于硅的特别设计的触发方法在非常少的时间应用在所有的活动面积类似二极管的接通。该惯性滑行的二极管集成到RSD结构可以作为阻尼二极管
在故障模式的放电电路。这种故障模式如故障的电缆线可能会导致振荡电流开关通过。
它已获得的RSD为基础的实验半导体开关可以成功地在脉冲功率系统内推动闪存灯泵浦高功率的钕激光。结果表明在该区域市交换机基于RSD为晶圆直径六三毫米和RSD 开关的关于区晶圆直径为76毫米可以切换当前的脉冲持续时间和峰值。三个开关并联成功试射以下模式：经营电压
V = 25 kV，经营电流 = 470 kA，并转移电荷= 145 库。
o
在2000 - 2001年，电容器钕激光射线的设施建在 RFNC - VNIIEF。这种电容器组，包括类型KRD - 25 – 100的18个开关，成功地没有任何失败的经营了5 年开关。
本报告提交结果发展新一代的固态开关，具有低功耗和损失高的交换容量。
二 RSD下一代的发展
新的RSD结构的制造技术已经发展用于增加开关的容量。这种新的结构标准贯入试验结构与“软”闭幕空间电荷区域变成缓冲层。
通过电压转变在缓冲层上的交换载体的良好传递，氮基厚度的减少和提高RSD开关的均匀被提供降低所有损失能量的组成成分，像扳机的缺损、开关过程短暂的缺损以及基层的缺损。我们的初步估计结果表明，这种结构必须通过RSD使运转电流的峰值不断增加，大约在1.5倍以上。
调查进行了阻断电压为2.4 kV及硅晶片直径为63、76 和100毫米的特殊测试站。这些测试的主要目标是测定在已给范围内通过单个RSD的最大允许水平的高峰电流。在电流通过的瞬间，通过RSD的电流和在RSD结构上的电压都在测试中被测量。在图一中，电流峰值的波形和电压的通过用尺寸为76毫米，阻断电压为2.4千伏的RSD显示。
直到最大许可等级为I极，电流研究项目的一致慢慢的增加。当这个极达到，对电压的尖锐程度和同一衰减电压曲线U进行了观察。电压上升的原因是在高温度情况下的自动载体的强大增加，电压衰减的原因是通过产生的等离子体，据同时还存在尖锐的指数，热传导的快速调节依赖自己在温度为400-600度的RSD的基础领域，初始浓度的硅集成度。
试验表明，在最大允许电流上通过的电压的尖锐程度不会导致RSD的直接错误。RSD 保持着其阻断特性。然而，在通过这种I极电流之后，我们可以观察到RSD连接的铝金属的负极被侵蚀的现象，这一事实是设备交界层的证明。随后电流的增加导致硅结构的熔合。因此，I极是RSD开关在长期反复多次经营模式下，确定操作峰值电流的相对标准偏差的参考位置。
图一.尺寸为76毫米和阻断电压为2.4千伏的RSD的脉冲电流波形（ a ）和电压降值（ b ）我们已认定，电流操作峰值I极必须小于80%。这一比例也证实了我在I极模式下的计算和测试结果。
多种直径的硅金属促成的新一代的RSD测试结果数据显示在图一。在同一测试中的比较结果在此表中，第一代的尺寸为63和76毫米的RSD被显示。
三基于新一代的RSD开关
新的转变——晶体管开关被制造成两种模式。第一种RSD是低姿态的金属陶瓷机架。第二种是RSD不通过机架制造，而是通过来自外围区域的额外的保护。
晶体管置入可用于在单-脉冲模式和反复-脉冲模式的机架下工作。如果重复使用脉冲模式下强制冷却的半导体器件，两边的散热器必须被使用。没有连接在机架的晶体管，密集的可以置于一个单一的集成机架。然而，这样的密集只能在单脉冲模式下工作。
典型开关的工作电压超过单个RSD的阻断电压，因此开关包括多种系列连接的RSD。转变——对于电流峰值从200kA到500kA，阻断电压为2400伏的晶体管开关，节略密封的金属——陶瓷的机架和不使用机架。
RSD的数量通过运行高电压的开关密集。因此，开关发展的技术问题大致是充分利用对于多种多系列连接的晶体管密集进行设计。很多特殊调查显示出了，如选择最佳材料以提供与RSD的最佳连接，密集的强大动力的计算，等等。这些调查提供了小型和平稳过渡电气和RSD热电阻之间的偏差，保证长期的性能可靠的开关。特殊的计算机技术
的开发，选择RSD的多种连接。在本区RSD对于泄漏电流和稳定的阻断电压放大器图的选择价值测量特别。这一选择技术允许排除在单个RSD密集区域的分压器使用均等的静态电压。因此，在这种选择之后，开关设计可以简化，开关的尺寸增加到大约1.5倍，开关的成本也增加了。
这种固态的开关在电压到25kV的情况下运行，在电流脉冲达到500微秒的情况下，运行峰值达到300kA。RFNC - VNIIEF计划使用这种开关在一系列激光装置“Iskra-6”的电容器。这种开关包括15个尺寸为76毫米、阻断电压为2.4千伏，连接到电介质机架的RSD。高一级水平的开关每伏能量可以达到开关的控制。此值为2.5*6
10瓦/立方厘米，这个值在相同脉冲晶闸管的开关使用中被超过了多次。
所有RSD开关的触发被平行连接在开关上的单一触发器提供。触发电流通行证同时连接所有RSD。这种触发类型增加了这种频繁触发开关的效率和可靠性，这是RSD的另一有益之处——在晶闸管上进行开关切换。
新一代的RSD在脉冲时间持续在1.5-2微秒之间，触发电流峰值可上升到1-1.5kA。这些数值比第一代RSD的触发电流值小到2-3倍。
四结论
下一代的晶体管开关转变和RSD——开关已开发试验表明——高水平的开关能量每伦所用时间已达到。该开关可以在单脉冲和重复脉冲模式下工作，适合许多应用脉冲动力的设备。
电子信息工程专业课程名称中英文翻译对照 （2009级培养计划）
实践环节翻译
高等数学Advanced Mathematics 大学物理College Physics 线性代数Linear Algebra 复变函数与积分变换Functions of Complex Variable and Integral Transforms 概率论与随机过程Probability and Random Process 物理实验Experiments of College Physics 数理方程Equations of Mathematical Physics 电子信息工程概论Introduction to Electronic and Information Engineering 计算机应用基础Fundamentals of Computer Application 电路原理Principles of Circuit 模拟电子技术基础Fundamentals of Analog Electronics 数字电子技术基础Fundamentals of Digital Electronics C语言程序设计The C Programming Language 信息论基础Fundamentals of Information Theory 信号与线性系统Signals and Linear Systems 微机原理与接口技术Microcomputer Principles and Interface Technology 马克思主义基本原理Fundamentals of Marxism 毛泽东思想、邓小平理论 和“三个代表”重要思想 概论 Thoughts of Mao and Deng 中国近现代史纲要Modern Chinese History 思想道德修养与法律基 础 Moral Education & Law Basis 形势与政策Situation and Policy 英语College English 体育Physical Education 当代世界经济与政治Modern Global Economy and Politics 卫生健康教育Health Education 心理健康知识讲座Psychological Health Knowledge Lecture 公共艺术课程Public Arts 文献检索Literature Retrieval 军事理论Military Theory 普通话语音常识及训练Mandarin Knowledge and Training 大学生职业生涯策划 （就业指导） Career Planning (Guidance of Employment ) 专题学术讲座Optional Course Lecture 科技文献写作Sci-tech Document Writing 高频电子线路High-Frequency Electronic Circuits 通信原理Communications Theory 数字信号处理Digital Signal Processing 计算机网络Computer Networks 电磁场与微波技术Electromagnetic Field and Microwave
1.This electron beam sweeps across each line at a uniform rate，then flies back to scan another line directly below the previous one and so on，until the horizontal lines into which it is desired to break or split the picture have been scanned in the desired sequence． 电子束以均匀的速率扫描每一行，然后飞速返回去扫描下一行，直到把被扫描的图像按所希望的顺序分割成行。 2.The technical possibilities could well exist，therefore，of nation-wide integrated transmission network of high capacity，controlled by computers，interconnected globally by satellite and submarine cable，providing speedy and reliable communications throughout the word 因此，在技术上完全可能实现全国性的集成发送网络。这种网络容量大，由计算机控制，并能通过卫星和海底电缆实现全球互联，提供世界范围的高速、可靠的通信。 3.Transit time is the primary factor which limits the ability of a transistor to operate at high frequency． 渡越时间是限制晶体管高频工作能力的主要因素 4.The intensity of sound is inversely proportional to the square of the distance measured from the source of the sound. 声强与到声源的距离的平方成反比。 5.The attenuation of the filter is nearly constant to within 0.5 dB over the entire frequency band． 该滤波器的衰减近于恒定, 整个频带内的变化在0.5 dB以内。 6.At present, the state of most semiconductor device technology is such that the device design and process technology must be supplemented by screening and inspection procedures, if ultimate device reliability is to be obtained and controlled． 目前, 大多数半导体器件的技术尚未十分完善, 以至若要获得并控制器件最终的可靠性, 就必须辅以筛选和检验, 以弥补设计和工艺技术之不足 7.Bandwidth of transistor amplifiers vary from about 250 MHz in the L band to 1000 MHz in the X band． 晶体管放大器的带宽在L波段约为250 MHz, 在X波段为1000 MHz。 8.The output of the differential amplifier is fed to the circuit’s output stage via an offset-compensation network, which causes the op-amp’s output to center at zero volts. The output stage takes the form of a complementary emitter follower, and provides a low-impedance output. 差动放大级的输出通过一个失调补偿网络与输出级相连, 目的是使运放的输出以0 V为中心。输出级采用互补的射极跟随器的形式以使输出阻抗很低 9.Because of the very high open-loop voltage gain of the op-amp, the output is driven into positive saturation (close to +V) when the sample voltage goes slightly above the reference voltage, and driven into negative saturation (close to-V) when the sample voltage goes slightly below the reference voltage. 由于运放的开环电压增益很高, 当取样电压略高于参考电压时, 输出趋向于正向饱和状态(接近+V)。当取样电压低于参考电压时, 输出趋向于负向饱和状态(接近-V)。 10.If the signal source were direct connected instead of capacitor coupled, there would be a low resistance path from the base to the negative supply line, and this would affect the circuit bias conditions. 如果信号源和电路不是用电容耦合而是直接相连，从基极到负电源线就会一个低阻通路，并且这将影响到电路偏置状态 11.The differential amplifier has a high-impedance (constant-current)“tail”to give it a high input impedance and a high degree of common-mode signal rejection. It also has a high-impedance collector (or drain) load, to give it a large amount of signal-voltage gain (typically about 100 dB). 差动放大极有一个高阻抗的“尾巴”（恒流源）以提供高输入阻抗和对共模信号的深度抑制，同时，它还具有一个高阻抗和集电极或漏极负载以提供高的信号电压增益（典型的数据是100dB). 12.On the other hand, a DC negative-logic system, as in Figure 3.6(b), is one which designates the more negative voltage state of the bit as the 1 level and the more positive as the 0 level. 另一方面, 如图3.6(b)所示, 把比特的较低的电压状态记为1电平, 较高的电压状态记为0电平, 这样的系统称为直流负逻辑系统。 13.For example, to represent the 10 numerals (0, 1, 2, …, 9) and the 26 letters of the English alphabet would require 36
电子技术英文自我介绍带翻译 I am 26 years old,born in shandong province . I was graduated from qingdao university. my major is electronic.and i got my bachelor degree after my graduation in the year of 2003. I spend most of my time on study,i have passed CET4/6 . and i have acquired basic knowledge of my major during my school time. In July 2003, I begin work for a small private company as a technical support engineer in QingDao city.Because I'm capable of more responsibilities, so I decided to change my job. And in August 2004,I left QingDao to BeiJing and worked for a foreign enterprise as a automation software test engineer.Because I want to change my working environment, I'd like to find a job which is more challenging. Morover Motorola is a global company, so I feel I can gain the most from working in this kind of company ennvironment. That is the reason why I come here to compete for this position. I think I'm a good team player and I'm a person of great honesty to others. Also I am able to work under great pressure. 我26岁,出生在山东省。 我毕业于青岛大学。我的专业是电子。我毕业后,我得到了我的学士学位在2003年。
各个学科名称英文翻译 哲学Philosophy 马克思主义哲学Philosophy of Marxism 中国哲学Chinese Philosophy 外国哲学Foreign Philosophies 逻辑学Logic 伦理学Ethics 美学Aesthetics 宗教学Science of Religion 科学技术哲学Philosophy of Science and Technology 经济学Economics 理论经济学Theoretical Economics 政治经济学Political Economy 经济思想史History of Economic Thought 经济史History of Economic 西方经济学Western Economics 世界经济World Economics 人口、资源与环境经济学Population, Resources and Environmental Economics 应用经济学Applied Economics 国民经济学National Economics 区域经济学Regional Economics 财政学（含税收学）Public Finance (including Taxation) 金融学（含保险学）Finance (including Insurance) 产业经济学Industrial Economics 国际贸易学International Trade 劳动经济学Labor Economics 统计学Statistics 数量经济学Quantitative Economics 中文学科、专业名称英文学科、专业名称 国防经济学National Defense Economics 法学Law 法学Science of Law 法学理论Jurisprudence 法律史Legal History 宪法学与行政法学Constitutional Law and Administrative Law 刑法学Criminal Jurisprudence 民商法学(含劳动法学、社会保障法学) Civil Law and Commercial Law (including Science of Labour Law and Science of Social Security Law ) 诉讼法学Science of Procedure Laws 经济法学Science of Economic Law 环境与资源保护法学Science of Environment and Natural Resources Protection Law 国际法学(含国际公法学、国际私法学、国际经济法学、) International law (including International Public law, International Private Law and International Economic Law) 军事法学Science of Military Law
基于单片机控制的光收发器设计 1 引言 在“三网合一”的推动下,光纤到户等光纤接入方案的应用日益广泛。在光进铜退的呼声下,光网络迅速发展。光收发器在光通信中起到光电、电光转换的作用，是光通信必不可少的器件。由于涉及到高速电路设计、精密机械加工和光学设计,光收发器的成本占据了光纤通信系统和的重要部分,而较高的光收发器价格成了制约光纤接入推广的瓶颈。进一步降低光收发器的成本将有利于光接入的应用推广，加快光进铜退的步伐。 光收发器主要由电路部分、光发送组件和光接收组件组成。其中电路部分又包括激光驱动、光接收信号放大和控制部分。目前市场上的光收发器的电路部分使用的是三个专用芯片。一直有公司在研究把激光驱动和接收信号放大电路集成在一个器件上,控制器使用普通的嵌入式处理器的方案。由于只使用一个专用芯片和一个通用芯片，这样就可以大幅降低电路部分的成本。ＰHYWORＫS 公司研制的PＨＹ1０76芯片就是一款这样的芯片。它主要针对1.２５Ｇｂpｓ到２.5Ｇbps的光收发器,具有外围电路简单，控制电路只需要普通的8位单片机就可以实现的特点。本文主要研究了PHY１076 的性能，选择了ATMEL 公司的ATＭEＧA88 单片机进行控制,设计出光收发器样品，并进行了性能测试,最终成功设计了1.25G 光收发器。 ２光收发器设计方案及工作原理讨论 光收发器在发展的过程中,有许多种不同的外形封装。ＳＦＰ(小型化可热插拔光收发一体模块）是目前在5Ｇｂpｓ以下速率中最先进的一种封装形式,具有小型化、可热插拔、功耗小、系统可集成度高以及能够进行数字诊断功能等特点。 本设计中使用激光驱动电路和光接收放大电路集成的PHY１076 作为专用芯片，使用ＡＴＭEL 的AVR 单片机ATＭEGA88 进行控制和实现DDＭ功能,加上相应的TOＳA(光发射组件）,ROSA(光接收组件)和结构件，设计了一款工作在1.25Gｂpｓ传输距离为10km 的ＳFP 光收发器。系统方框图如图1所示：
哲学Philosophy 马克思主义哲学Philosophy of Marxism 中国哲学Chinese Philosophy 外国哲学Foreign Philosophies 逻辑学Logic 伦理学Ethics 美学Aesthetics 宗教学Science of Religion 科学技术哲学Philosophy of Science and Technology 经济学Economics 理论经济学Theoretical Economics 政治经济学Political Economy 经济思想史History of Economic Thought 经济史History of Economic 西方经济学Western Economics 世界经济World Economics 人口、资源与环境经济学Population, Resources and Environmental Economics 应用经济学Applied Economics 国民经济学National Economics 区域经济学Regional Economics 财政学（含税收学）Public Finance (including Taxation) 金融学（含保险学）Finance (including Insurance) 产业经济学Industrial Economics 国际贸易学International Trade 劳动经济学Labor Economics 统计学Statistics 数量经济学Quantitative Economics 中文学科、专业名称英文学科、专业名称 国防经济学National Defense Economics 法学Law 法学Science of Law 法学理论Jurisprudence 法律史Legal History 宪法学与行政法学Constitutional Law and Administrative Law 刑法学Criminal Jurisprudence 民商法学(含劳动法学、社会保障法学) Civil Law and Commercial Law (including Science of Labour Law and Science of Social Security Law ) 诉讼法学Science of Procedure Laws
合肥工业大学各学院、专业名称及其英文翻译仪器科学与光电工程学院School of Instrument Science and Opto-electronic Engineering 1、测控技术与仪器Measurement & Control Technology and Instrument 2、光信息科学与技术 Optic Information Science & Technology 机械与汽车工程学院 School of Machinery and Automobile Engineering 3、车辆工程 Vehicles Engineering 4、工业工程 Industrial Engineering 5、工业设计 Industry Design 6、过程装备与控制工程 Process Equipment & Control Engineering 7、机械设计制造及其自动化 Machine Design & Manufacture & Its Automation 8、交通工程 Transportation Engineering 9、热能与动力工程Thermal Energy & Power Engineering 材料科学与工程学院 School of Material Science and Engineering 10、金属材料工程 Metal Materials Engineering 11、材料物理Materials Physics 12、无机非金属材料工程 Inorganic Non-metallic Materials Engineering 13、材料成型及控制工程 Material Forming & Control Engineering 电气与自动化工程学院 School of Electric Engineering and Automation 14、电气工程及其自动化 Electric Engineering and Automation 15、生物医学工程 Biomedical Engineering 16、自动化 Automation 计算机与信息学院 School of Computer and Information 17、计算机科学与技术 Computer Science & Technology 18、电子信息工程 Electronic Information Engineering 19、电子信息科学与技术 Electronic Information Science & Technology 20、通信工程 Communications Engineering 21、信息安全Information Security 化学工程学院 School of Chemical Engineering 22、高分子材料与工程 Macromolecule Material and Engineering 23、化学工程与工艺Chemical Engineering and Technics 24、制药工程 Pharmacy Engineering 25、应用化学 Applied Chemistry 土木建筑工程学院 School of Civil Engineering 26、给排水工程Water Supply & Drainage Engineering 27、工程力学 Engineering Mechanics 28、水利水电工程 Hydraulic and Hydro-Power Engineering 29、土木工程 Civil Engineering 30、建筑环境与设备工程 Architectural Environment & Equipment Engineering 建筑 与艺术学院 School of Architecture and Arts 31、城市规划 Urban Planning 32、建筑 学 Architecture 33、艺术设计 Artistic Design 资源与环境学院 School of Resources and Environment 34、地理信息系统 Geographic Information System 35、环境工程
（电子行业企业管理）电子专业中英文词汇翻 译
有功功率activepower 无功功率reactivepower 视在功率apparentpower 功率因数powerfactor 功率因数补偿 power-factorpensation 串联谐振seriesresonance 并联谐振parallelresonance 谐振频率resonancefrequency 频率特性frequencycharacteristic 幅频特性 amplitude-frequencyresponsechar acteristic 相频特性 phase-frequencyresponsecharacte ristic 截止频率cutofffrequency 品质因数qualityfactor 通频带pass-band 带宽bandwidth(BW) 滤波器filter 一阶滤波器first-orderfilter 二阶滤波器second-orderfilter 低通滤波器low-passfilter 高通滤波器high-passfilter 带通滤波器band-passfilter 带阻滤波器band-stopfilter 转移函数transferfunction 波特图Bodediagram 傅立叶级数Fourierseries 三相电路 三相电路three-phasecircuit 三相电源three-phasesource 对称三相电源symmetricalthree-phasesource 对称三相负载symmetricalthree-phaseload 相电压phasevoltage 相电流phasecurrent 线电压linevoltage 线电流linecurrent 三相三线制 three-phasethree-wiresystem 三相四线制 three-phasefour-wiresystem 三相功率three-phasepower 星形连接 starconnection(Y-connection) 三角形连接triangularconnection(D-connectio n,deltaconnection) 中线neutralline 电路的暂态过程分析 暂态transientstate 稳态steadystate 暂态过程，暂态响应transientresponse 换路定理lowofswitch 一阶电路first-ordercircuit 三要素法three-factormethod 时间常数timeconstant 积分电路integratingcircuit 微分电路differentiatingcircuit 磁路与变压器 磁场magneticfield 磁通flux
中国教育在线考研频道提供考研全方面信息指导及咨询服务，为您成功考研提供一切帮助。 哲学Philosophy 马克思主义哲学Philosophy of Marxism 中国哲学Chinese Philosophy 外国哲学Foreign Philosophies 逻辑学Logic 伦理学Ethics 美学Aesthetics 宗教学Science of Religion 科学技术哲学Philosophy of Science and Technology 经济学Economics 理论经济学Theoretical Economics 政治经济学Political Economy 经济思想史History of Economic Thought 经济史History of Economic 西方经济学Western Economics 世界经济World Economics 人口、资源与环境经济学Population, Resources and Environmental Economics 应用经济学Applied Economics 国民经济学National Economics 区域经济学Regional Economics 财政学（含税收学）Public Finance (including Taxation) 金融学（含保险学）Finance (including Insurance) 产业经济学Industrial Economics 国际贸易学International Trade 劳动经济学Labor Economics 统计学Statistics 数量经济学Quantitative Economics 中文学科、专业名称英文学科、专业名称 国防经济学National Defense Economics 法学Law 法学Science of Law 法学理论Jurisprudence 法律史Legal History 宪法学与行政法学Constitutional Law and Administrative Law 刑法学Criminal Jurisprudence
Unit 12 生物识别技术 Unit 12-1 第一部分：指纹识别 在所有的生物技术中，指纹识别是最早期的一种技术。我们知道，每个人都有自己独特的、不可变更的指纹。指纹是由手指表皮上的一系列峰谷组成的。指纹的独特性是由这些峰谷的形状以及指纹的细节点所决定的。指纹的细节点是指纹局部凸起处的一些特性，这些特性出现在凸起的分叉处或是凸起的截止处。 指纹匹配技术可以被分为两类：基于细节的指纹匹配技术和基于相关性的指纹匹配技术。基于细节的指纹匹配首先要找出细节点，然后在手指上对应出与它们相关的位置，如图12.1所示。但是，使用这种方法存在一些困难。要精确地提取指纹的细节点是很困难的。而且，这种方法不能很好地考虑指纹峰谷的整体形状。基于相关性的指纹匹配技术可以解决部分基于细节的指纹匹配方法存在的问题，但它也存在一些自身的缺陷。基于相关性的匹配技术需要给出已注册过的特征点的精确位置，并且该方法会受图像平移和旋转的影响。 图12.1 基于细节的指纹匹配 基于细节的指纹匹配技术在匹配不同大小的细节模型时（未注册过的）会存在一些问题。指纹上局部的凸起结构不能完全由指纹细节实现特征化。我们可以尝试另一种表达指纹的方法，它可以获得更多的指纹局部信息并且得到固定长度的指纹编码。于是，我们只需要计算两个指纹编码之间的欧几里得距离，匹配过程有望变得相对简单。 研发对于指纹图像中噪声更稳健并能实时提供更高精度的算法是重要的。商用指纹（身份）认证系统对给定的错误接受率要求具有很低的错误拒绝率。在这点上，任何一项简单的技术都很难实现。我们可以从不同的匹配技术中汇总多个证据从而提高系统的总体精确度。在实际应用中，传感器、采集系统、性能随时间的变化是关键因素。为了评价系统性能，我们有必要对少数使用者在一段时间内进行现场试验。 每天我们可以从法医鉴定、出入口控制、驾驶证登记等多个方面的应用中采集并保存大量的指纹。基于指纹的自动识别系统需要把输入的指纹与数据库中大量的指纹进行匹配验证。为了缩短搜索时间、降低计算复杂度，要以准确而一致的方式将这些指纹分类，从而使输入的指纹只需与数据库某一子集中的指纹进行比对。 指纹分类是将指纹划分入多个预定义指纹类型中的一类中的一项技术。这些预定义的指纹类型是由提供索引机制的文献建立的。图12.2表示了不同类型的指纹。它们有螺纹状的、右旋状的、左旋状的、弓形的、帐篷形的。输入指纹首先粗略地被匹配为预定义的类型中的一类，随后，输入指纹仅与这一大类指纹库中的子集作更精细的比较。 图12.2 不同类型的指纹 指纹自动匹配中关键的一步是自动并且可靠地从输入指纹图像中提取出细节。然而，细节提取算法的好坏很大程度上依赖于输入图像质量的好坏。为确保自动指纹识别或确认系统的性能对于不同指纹图像质量具有稳健性，必须在细节提取模块中加入指纹增强算法。快速指纹增强算法能根据对局部指纹脊方向和频率（密度）的估计自适应地改善输入指纹图像中脊和沟结构的清晰度，如图12.3所示。实验证明加入增强算法可以显著增强指纹认证的精度。 图12.3 指纹增强 Unit 12-2 第二部分：说话人辨认介绍 介绍 现代安全系统范围很广, 通常要通过多层系统才能完全被突破。除了标准的锁和警报系统以外，还有很复杂的方法来保护重要资料。其中多数的方法为可以允许或者不允许一个特定人员获取资料——计算机系统必须能够检测出指纹、读取个人眼孔图样、或者确定说话者的真实身份。最后一点是本文讨论的重点——说话人辨认。说话人辨认经常会与其他类似的术语混淆。以下对这些术语的精确定义做出解释。 说话人识别：确定是谁在说话。 说话人辨认：初始情况下不知道说话人是谁，必须在与模板比较后确定说话人的身份。通常会有很多相关的模板。 说话人确认：确定说话者是否就是他（她）自称的那个人。仅将说话者的话音与一个样板进行比对，即他（她）自称的那一个。 语音识别：识别出人们说话时的语句。换句话说，识别出一个人在说什么而不是谁在说话。这个术语经常与声音识别相混淆。声音识别是识别出说话人。
一．电子元器件Electronic Components 1．保险元器件safety device （1）保险丝座 fuse block （2）电流保险丝 current fuse （3）其他保险元器件 other （4）温度保险丝 temperature fuse （5）温度开关 temperature switches （6）自恢复熔断器since the resumption of fuse 2. 变频器transducer （1）PLC 变频器 PLC transducer （2）高性能通用变频器High-performance Universal transducer （3）恒功率变频器Constant Power Inverter （4）恒转矩变频器Constant Torque converter （5）专用变频器Exclusive Inverter 3.变压器transformer （1）电源变压器Power Transformer （2）隔离变压器the isolation transformer （3）恒压变压器constant voltage transformer （4）脉冲变压器pulse transformer （5）其他变压器other transformers （6）音频变压器Audio transformers （7）自耦变压器autotransformer （8）耦合变压器coupling transformer 4.场效应管voltage controller 5. 传感器sensor （1）电磁传感器Power Transformer （2）光电传感器Photoelectric Sensors （3）光纤传感器Fiber Optic Sensors （4）加速度传感器Accelerometer （5）接近传感器Proximity sensor （6）料位、液位传感器Level, liquid level sensor （7）压力传感器Pressure Sensor （8）振动传感器Vibration Sensor （9）气体传感器Gas Sensor （10）声波传感器Acoustic sensor （11）视觉、图像传感器Visual, image sensor （12）水分、湿度传感器Moisture and humidity sensor （13）位移传感器Displacement sensor （14）敏感元件传感器Sensor sensor 6.传声器microphone 7.电容器capacitor （1）玻璃电容器Glass capacitors （2）玻璃釉电容器Glazed glass capacitors （3）复合介质电容器Composite Dielectric Capacitors
中文学科、专业名称英文学科、专业名称哲学Philosophy 哲学Philosophy 马克思主义哲学Philosophy of Marxism xx 哲学Chinese Philosophy xx 哲学Foreign Philosophies 逻辑学Logic 伦理学Ethics 美学Aesthetics 宗教学Science of Religion 科学技术哲学Philosophy of Science and Technology 经济学Economics 理论经济学Theoretical Economics 政治经济学Political Economy 经济思想史History of Economic Thought 经济史History of Economic
西方经济学Western Economics 世界经济World Economics 人口、资源与环境经济学Population, Resources and Environmental Economics 应用经济学Applied Economics 国民经济学National Economics 区域经济学Regional Economics 财政学(含税收学) Public Finance (including Taxation) 金融学(含保险学) Finance (including Insurance) 产业经济学Industrial Economics 国际贸易学International Trade 劳动经济学Labor Economics 统计学Statistics 数量经济学Quantitative Economics 中文学科、专业名称英文学科、专业名称 国防经济学National Defense Economics
Infrared Remote Control System Abstract Red outside data correspondence the technique be currently within the scope of world drive extensive usage of a kind of wireless conjunction technique,drive numerous hardware and software platform support. Red outside the transceiver product have cost low, small scaled turn, the baud rate be quick, point to point SSL, be free from electromagnetism thousand Raos etc.characteristics, can realization information at dissimilarity of the product fast, convenience, safely exchange and transmission, at short distance wireless deliver aspect to own very obvious of advantage.Along with red outside the data deliver a technique more and more mature, the cost descend, red outside the transceiver necessarily will get at the short distance communication realm more extensive of application. The purpose that design this system is transmit customer’s operation information with infrared rays for transmit media, then demodulate original signal with receive circuit. It use coding chip to modulate signal and use decoding chip to demodulate signal. The coding chip is PT2262 and decoding chip is PT2272. Both chips are made in Taiwan. Main work principle is that we provide to input the information for the PT2262 with coding keyboard. The input information was coded by PT2262 and loading to high frequent load wave whose frequent is 38 kHz, then modulate infrared transmit dioxide and radiate space outside when it attian enough power. The receive circuit receive the signal and demodulate original information. The original signal was decoded by PT2272, so as to drive some circuit to accomplish customer’s operation demand. Keywords:Infrare dray；Code；Decoding；LM386；Redoutside transceiver