fast PACK 0 H P500P501P502P503 Version 05/02600V 35A600V 15A600V 20A600V 30A
Al2O3 DCB Al2O3 DCB Al2O3 DCB Al2O3 DCB Maximum Ratings / H?chstzul?ssige Werte H-bridge H-bridge H-bridge H-bridge
at T j=25°C, unless otherwise specified
Condition
Parameter Symbol Value Value Value Value Unit
Transistor Inverter
Transistor Wechselrichter
Collector-emitter break down voltage V CE600600600600V Kollektor-Emitter-Sperrspannung
DC collector current* Tj=150°C TC=80°C I C49192636A Kollektor-Dauergleichstrom
Repetitive peak collector current*Tj=150°C TC=80°C Ic puls98375172A Periodischer Kollektorspitzenstrom tp=1ms
Power dissipation per IGBT Tj=150°C TC=80°C P tot100445878W Verlustleistung pro IGBT*
Gate-emitter peak voltage V GE±20±20±20±20V Gate-Emitter-Spitzenspannung
Diode Inverter
Diode Wechselrichter
DC forward current*Tj=150°C TC=80°C I F33152133A Dauergleichstrom
Repetitive peak forward current*Tj=150°C TC=80°C I FRM66304366A Periodischer Spitzenstrom tp=1ms
Power dissipation per Diode*Tj=150°C TC=80°C P tot41233241W Verlustleistung pro Diode
Thermal properties
Thermische Eigenschaften
max. Chip temperature T jmax150150150150°C max. Chiptemperatur
Storage temperature T stg-40…+125-40…+125-40…+125-40…+125°C Lagertemperatur
Operation temperature T op-40…+125-40…+125-40…+125-40…+125°C Betriebstemperatur
Thermal resistance, chip to case Diode Rectifier R thJC----K/W W?rmewiderstand Chip-Bodenplatte Transistor Inverter R thJC0,71,61,20,9K/W per chip Diode Inverter R thJC1,732,21,7K/W
Insulation properties
Modulisolation
Insulation test voltage t=1min V is4000400040004000Vdc Isolationsspannung
Creepage distance TBD TBD TBD TBD mm Kriechstrecke
Clearance TBD TBD TBD TBD mm Luftstrecke
NOTE:
* - These values are calculated from the Rth of the component in this module.
The real values are limited by the number of the wirebonding and pinning.
Tc - Indicates the case temperature of the module, and it may differ from the heatsink temperature.
fast PACK 0H, 15A/600V V23990-P501-F
Version 05/02
Characteristic values / Charakteristische Werte
at T j=25°C, unless otherwise specified
Parameter Symbol Condition T RG VGE VCE IF IC Value Unit
(°C)(?)(V)(V) (A) (A)min.typ.max. Transistor Inverter, inductive load
Transistor Wechselrichter
Gate emitter threshold voltage VGE(th)Vge=Vce Tj=25°C600250μ5,6V Gate-Schwellenspannung
Collector-emitter saturation voltage VCE(sat)Tj=25°C1512,022,7V Kollektor-Emitter S?ttigungsspannung Tj=125°C1,62 Collector-emitter cut-off current incl. FRED ICES TC=25°C0600250μA Kollektor-Emitter Reststrom inkl. FRED2
Gate-emitter leakage current IGES Tj=25°C200250nA Gate-Emitter Reststrom
Turn-on delay time td(on)Rg(on)=Rg(off)Tj=25°C101539012,017ns Einschaltverz?gerungszeit Tj=125°C17
Rise time tr Rg(on)=Rg(off)Tj=25°C101539012,08ns Anstiegszeit Tj=125°C16
Turn-off delay time td(off)Rg(on)=Rg(off)Tj=25°C101539012,096ns Abschaltverz?gerungszeit Tj=125°C110170
Fall time tf Rg(on)=Rg(off)Tj=25°C101539012,018ns Fallzeit Tj=125°C7095
Turn-on energy loss per pulse Eon Rg(on)=Rg(off)Tj=25°C1539012,00,05mWs Einschaltverlustenergie pro Puls Tj=125°C0,05
Turn-off energy loss per pulse Eoff Rg(on)=Rg(off)Tj=25°C1539012,00,05mWs Abschaltverlustenergie pro Puls Tj=125°C0,1750,28
SC withstand time tSC @ 10*Ic(max)TJ=125°C TBDμs Kurzschlu?verhalten
Input capacitance Cies f=1MHz TJ=25°C TBD nF Eingangskapazit?t
Output capacitance Coss f=1MHz TJ=25°C TBD nF Ausgangskapazit?t
Diode Wechselrichter
Diode forward voltage VF TJ=25°C51,89V Durchla?spannung
Peak reverse recovery current IRM dIF/dt=-200A/ms TJ=25°C4005Α
Rückstromspitze TJ=125°C
Reverse recovery time trr dIF/dt=-200A/ms TJ=125°C40055ns Sperreverz?gerungszeit
Reverse recovered charge Qrr TJ=125°C4000,17mC Sperrverz?gerungsladung dif/dt=200 A/msec
NTC-Widerstand
Rated resistance R25Tol. ±5%Tc=25°C9,51010,5k?Nennwiderstand
Deviation of R100DR/R R100=1503W Tc=100°C2,6%/K Abweichung von R100
Power dissipation given Epcos-Typ P Tc=25°C210mW Verlustleistung Epcos-Typ angeben
B-value B(25/100)Tol. ±3%3730K
B-Wert
fast PACK 0H, 20A/600V V23990-P502-F
Version 05/02
Characteristic values / Charakteristische Werte
at T j=25°C, unless otherwise specified
Parameter Symbol Condition T RG VGE VCE IF IC Value Unit
(°C)(?)(V)(V) (A) (A)min.typ.max. Transistor Inverter, inductive load
Transistor Wechselrichter
Gate emitter threshold voltage VGE(th)Vge=Vce Tj=25°C600250μ4,55,57V Gate-Schwellenspannung
Collector-emitter saturation voltage VCE(sat)Tj=25°C1520,01,82,7V Kollektor-Emitter S?ttigungsspannung Tj=125°C1,62 Collector-emitter cut-off current incl. FRED ICES TC=25°C0600250μA Kollektor-Emitter Reststrom inkl. FRED2
Gate-emitter leakage current IGES Tj=25°C200250nA Gate-Emitter Reststrom
Turn-on delay time td(on)Rg(on)=Rg(off)Tj=25°C31539020,015ns Einschaltverz?gerungszeit Tj=125°C1521
Rise time tr Rg(on)=Rg(off)Tj=25°C31539020,012ns Anstiegszeit Tj=125°C1318
Turn-off delay time td(off)Rg(on)=Rg(off)Tj=25°C31539020,073ns Abschaltverz?gerungszeit Tj=125°C105135
Fall time tf Rg(on)=Rg(off)Tj=25°C31539020,032ns Fallzeit Tj=125°C5573
Turn-on energy loss per pulse Eon Rg(on)=Rg(off)Tj=25°C1539020,00,105mWs Einschaltverlustenergie pro Puls Tj=125°C0,120,6
Turn-off energy loss per pulse Eoff Rg(on)=Rg(off)Tj=25°C1539020,00,150,2mWs Abschaltverlustenergie pro Puls Tj=125°C0,330,5
SC withstand time tSC @ 10*Ic(max)TJ=125°C TBDμs Kurzschlu?verhalten
Input capacitance Cies f=1MHz TJ=25°C TBD nF Eingangskapazit?t
Output capacitance Coss f=1MHz TJ=25°C TBD nF Ausgangskapazit?t
Diode Wechselrichter
Diode forward voltage VF TJ=25°C152,04V Durchla?spannung TJ=150°C1,35
Peak reverse recovery current IRM dIF/dt=-100A/ms TJ=100°C100254,9Α
Rückstromspitze
Reverse recovery time trr dIF/dt=-100A/ms TJ=25°C30135ns Sperreverz?gerungszeit
Reverse recovered charge Qrr TJ=125°C400TBD mC Sperrverz?gerungsladung dif/dt=200 A/msec
NTC-Widerstand
Rated resistance R25Tol. ±5%Tc=25°C9,51010,5k?Nennwiderstand
Deviation of R100DR/R R100=1503W Tc=100°C2,6%/K Abweichung von R100
Power dissipation given Epcos-Typ P Tc=25°C210mW Verlustleistung Epcos-Typ angeben
B-value B(25/100)Tol. ±3%3730K
B-Wert
fast PACK 0H, 30A/600V V23990-P503-F
Version 05/02
Characteristic values / Charakteristische Werte
at T j=25°C, unless otherwise specified
Parameter Symbol Condition T RG VGE VCE IF IC Value Unit
(°C)(?)(V)(V) (A) (A)min.typ.max. Transistor Inverter, inductive load
Transistor Wechselrichter
Gate emitter threshold voltage VGE(th)Vge=Vce Tj=25°C600250μ4,55,27V Gate-Schwellenspannung
Collector-emitter saturation voltage VCE(sat)Tj=25°C1530,01,82,6V Kollektor-Emitter S?ttigungsspannung Tj=125°C1,62 Collector-emitter cut-off current incl. FRED ICES TC=25°C0600250μA Kollektor-Emitter Reststrom inkl. FRED4
Gate-emitter leakage current IGES Tj=25°C200250nA Gate-Emitter Reststrom
Turn-on delay time td(on)Rg(on)=Rg(off)TJ=25°C31539030,025ns Einschaltverz?gerungszeit Tj=125°C24
Rise time tr Rg(on)=Rg(off)TJ=25°C31539030,012ns Anstiegszeit Tj=125°C11
Turn-off delay time td(off)Rg(on)=Rg(off)TJ=25°C31539030,0150ns Abschaltverz?gerungszeit Tj=125°C180
Fall time tf Rg(on)=Rg(off)TJ=25°C31539030,038ns Fallzeit Tj=125°C58
Turn-on energy loss per pulse Eon Rg(on)=Rg(off)Tj=25°C31539030,00,28mWs Einschaltverlustenergie pro Puls Tj=125°C0,28
Turn-off energy loss per pulse Eoff Rg(on)=Rg(off)Tj=25°C31539030,00,240,35mWs Abschaltverlustenergie pro Puls Tj=125°C0,450,75
SC withstand time tSC @ 10*Ic(max)TJ=125°C TBDμs Kurzschlu?verhalten
Input capacitance Cies f=1MHz TJ=25°C TBD nF Eingangskapazit?t
Output capacitance Coss f=1MHz TJ=25°C TBD nF Ausgangskapazit?t
Diode Wechselrichter
Diode forward voltage VF TJ=25°C301,26V Durchla?spannung1,61
Peak reverse recovery current IRM dIF/dt=-100A/ms TJ=100°C100506Α
Rückstromspitze
Reverse recovery time trr dIF/dt=-200A/ms TJ=25°C30135ns Sperreverz?gerungszeit
Reverse recovered charge Qrr TJ=125°C400TBD mC Sperrverz?gerungsladung dif/dt=200 A/msec
NTC-Widerstand
Rated resistance R25Tol. ±5%Tc=25°C9,51010,5k?Nennwiderstand
Deviation of R100DR/R R100=1503W Tc=100°C2,6%/K Abweichung von R100
Power dissipation given Epcos-Typ P Tc=25°C210mW Verlustleistung Epcos-Typ angeben
B-value B(25/100)Tol. ±3%3730K
B-Wert
fast PACK 0H, 35A/600V V23990-P500-F
Version 05/02
Characteristic values / Charakteristische Werte
at T j=25°C, unless otherwise specified
Parameter Symbol Condition T RG VGE VCE IF IC Value Unit
(°C)(?)(V)(V) (A) (A)min.typ.max. Transistor Inverter, inductive load
Transistor Wechselrichter
Gate emitter threshold voltage VGE(th)Vge=Vce Tj=25°C600250μ4,55,57V Gate-Schwellenspannung
Collector-emitter saturation voltage VCE(sat)Tj=25°C1540,01,72,7V Kollektor-Emitter S?ttigungsspannung Tj=125°C1,52 Collector-emitter cut-off current incl. FRED ICES TC=25°C0600250μA Kollektor-Emitter Reststrom inkl. FRED3
Gate-emitter leakage current IGES Tj=25°C200250nA Gate-Emitter Reststrom
Turn-on delay time td(on)Rg(on)=Rg(off)TJ=25°C2,21539040,025ns Einschaltverz?gerungszeit Tj=125°C27
Rise time tr Rg(on)=Rg(off)TJ=25°C2,21539040,018ns Anstiegszeit Tj=125°C20
Turn-off delay time td(off)Rg(on)=Rg(off)TJ=25°C2,21539040,0145ns Abschaltverz?gerungszeit Tj=125°C185225
Fall time tf Rg(on)=Rg(off)TJ=25°C2,21539040,035ns Fallzeit Tj=125°C5595
Turn-on energy loss per pulse Eon Rg(on)=Rg(off)TJ=125°C1539040,00,4mWs Einschaltverlustenergie pro Puls Tj=125°C0,4
Turn-off energy loss per pulse Eoff Rg(on)=Rg(off)TJ=125°C1539040,00,37mWs Abschaltverlustenergie pro Puls Tj=125°C0,70,8
SC withstand time tSC @ 10*Ic(max)TJ=125°C TBDμs Kurzschlu?verhalten
Input capacitance Cies f=1MHz TJ=25°C TBD nF Eingangskapazit?t
Output capacitance Coss f=1MHz TJ=25°C TBD nF Ausgangskapazit?t
Diode Wechselrichter
Diode forward voltage VF TJ=25°C301,26V Durchla?spannung1,61
Peak reverse recovery current IRM dIF/dt=-100A/ms TJ=100°C100506Α
Rückstromspitze
Reverse recovery time trr dIF/dt=-200A/ms TJ=25°C30135ns Sperreverz?gerungszeit
Reverse recovered charge Qrr TJ=125°C400TBD mC Sperrverz?gerungsladung dif/dt=200 A/msec
NTC-Widerstand
Rated resistance R25Tol. ±5%Tc=25°C9,51010,5k?Nennwiderstand
Deviation of R100DR/R R100=1503W Tc=100°C2,6%/K Abweichung von R100
Power dissipation given Epcos-Typ P Tc=25°C210mW Verlustleistung Epcos-Typ angeben
B-value B(25/100)Tol. ±3%3730K
B-Wert