Fast S-IGBT in NPT-technology
? 75% lower E off compared to previous generation combined with
low conduction losses
? Short circuit withstand time – 10 μ
s ?
Designed for:
- Motor controls - Inverter
? NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour - parallel switching capability
Type V CE I C V CE(sat )T j Package Ordering Code SGP20N60SGB20N60SGW20N60600V
20A
2.4V
150°C
TO-220AB TO-263AB TO-247AC
Q67041-A4712-A2Q67041-A4712-A4Q67040-S4236
Maximum Ratings Parameter
Symbol Value Unit Collector-emitter voltage V C E 600V DC collector current T C = 25°C T C = 100°C
I C
4020
Pulsed collector current, t p limited by T jmax I C p u l s 80Turn off safe operating area V CE ≤ 600V, T j ≤ 150°C -80A
Gate-emitter voltage
V G E ±20V Avalanche energy, single pulse I C = 20 A, V CC = 50 V, R GE = 25 ?,start at T j = 25°C
E A S
115
mJ
Short circuit withstand time 1)
V GE = 15V, V CC ≤ 600V, T j ≤ 150°C
t S C 10μs Power dissipation T C = 25°C
P t o t 179W Operating junction and storage temperature
T j , T s t g
-55...+150
°C
Thermal Resistance Parameter Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,junction – case R t h J C
0.7
Thermal resistance,junction – ambient
R t h J A
TO-247AC
40
K/W
Electrical Characteristic, at T j = 25 °C, unless otherwise specified Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V (B R )C E S V G E =0V, I C =500μA 600
--Collector-emitter saturation voltage
V C E (s a t )
V G E = 15V, I C =20A T j =25°C T j =150°C
1.7-2
2.4 2.42.9Gate-emitter threshold voltage V G E (t h )I C =700μA,V C E =V G E 3
4
5
V
Zero gate voltage collector current
I C E S
V C E =600V,V G E =0V T j =25°C T j =150°C
----402500μA
Gate-emitter leakage current I G E S V C E =0V,V G E =20V --100nA Transconductance g f s
V C E =20V, I C =20A
-14
-S
Dynamic Characteristic Input capacitance C i s s -11001320Output capacitance
C o s s -107128Reverse transfer capacitance C r s s V C E =25V,V G E =0V,f =1MHz
-6376pF
Gate charge
Q G a t e V C C =480V, I C =20A V G E =15V -100
130
nC Internal emitter inductance
measured 5mm (0.197 in.) from case
L E
TO-247AC Fehler!
Verweisquelle konnte nicht gefunden werden.
--713
-nH
Short circuit collector current
1)
I C (S C )
V G E =15V,t S C ≤10μs V C C ≤ 600V,T j ≤ 150°C
-200-A
Switching Characteristic, Inductive Load, at T j =25 °C Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic Turn-on delay time t d (o n )-3646Rise time
t r -3036Turn-off delay time t d (o f f )-225270Fall time t f -5465ns
Turn-on energy E o n -0.440.53Turn-off energy E o f f -0.330.43Total switching energy
E t s
T j =25°C,
V C C =400V,I C =20A,V G E =0/15V,R G =16?,
Energy losses include “tail” and diode reverse recovery.
-0.77
0.96
mJ Switching Characteristic, Inductive Load, at T j =150 °C Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic Turn-on delay time t d (o n )-3646Rise time
t r -3036Turn-off delay time t d (o f f )-250300Fall time t f -6376ns
Turn-on energy E o n -0.670.81Turn-off energy E o f f -0.490.64Total switching energy
E t s
T j =150°C V C C =400V,I C =20A,V G E =0/15V,R G =16?
Energy losses include “tail” and diode reverse recovery.
- 1.12
1.45
mJ
I C , C O L L E C T O R C U R R E N T
10Hz
100Hz 1kHz 10kHz 100kHz
0A
10A 20A 30A 40A 50A 60A 70A 80A 90A
100A 110A
I C , C O L L E C T O R C U R R E N T
1V
10V
100V
1000V
0.1A
1A
10A
100A
f , SWITCHING FREQUENCY
V CE , COLLECTOR -EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency
(T j ≤ 150°C, D = 0.5, V CE = 400V,V GE = 0/+15V, R G = 16?)
Figure 2. Safe operating area (D = 0, T C = 25°C, T j ≤ 150°C)
P t o t , P O W E R D I S S I P A T I O N
25°C
50°C
75°C
100°C
125°C
0W 20W 40W 60W 80W 100W 120W 140W
160W
180W 200W I C , C O L L E C T O R C U R R E N T
25°C
50°C 75°C 100°C 125°C
0A
10A
20A
30A
40A
50A
T C , CASE TEMPERATURE
T C , CASE TEMPERATURE
Figure 3. Power dissipation as a function of case temperature (T j ≤ 150°C)Figure 4. Collector current as a function of case temperature
(V GE ≤ 15V, T j ≤ 150°C)
I C , C O L L E C T O R C U R R E N T
0V
1V 2V 3V 4V 5V
0A 10A 20A 30A 40A 50A 60A
I C , C O L L E C T O R C U R R E N T
0V
1V 2V 3V 4V 5V
0A 10A
20A
30A
40A
50A
60A
V CE , COLLECTOR -EMITTER VOLTAGE
V CE , COLLECTOR -EMITTER VOLTAGE
Figure 5. Typical output characteristics (T j = 25°C)Figure 6. Typical output characteristics (T j = 150°C)
I C , C O L L E C T O R C U R R E N T
0V
2V 4V 6V 8V 10V
0A 10A 20A 30A 40A 50A 60A
70A V C E (s a t ), C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E
-50°C 0°C 50°C 100°C 150°C
1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
V GE , GATE -EMITTER VOLTAGE
T j , JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
(V CE = 10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction temperature (V GE = 15V)
t , S W I T C H I N G T I M E S
10A 20A 30A 40A
10ns
100ns
t , S W I T C H I N G T I M E S
0?
10?20?30?40?50?60?
10ns
100ns
I C , COLLECTOR CURRENT
R G , GATE RESISTOR
Figure 9. Typical switching times as a function of collector current
(inductive load, T j = 150°C, V CE = 400V,V GE = 0/+15V, R G = 16?)Figure 10. Typical switching times as a function of gate resistor
(inductive load, T j = 150°C, V CE = 400V,V GE = 0/+15V, I C = 20A)
t , S W I T C H I N G T I M E S
0°C
50°C 100°C 150°C
10ns
100ns
V G E (t h ), G A T E -E M I T T E R T H R E S H O L D V O L T A G E
-50°C
0°C
50°C
100°C
150°C 2.0V
2.5V
3.0V 3.5V
4.0V 4.5V
5.0V 5.5V
T j , JUNCTION TEMPERATURE
T j , JUNCTION TEMPERATURE
Figure 11. Typical switching times as a function of junction temperature
(inductive load, V CE = 400V, V GE = 0/+15V,I C = 20A, R G = 16?)
Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I C = 0.7mA)
E , S W I T C H I N G E N E R G Y L O S S E S
0A
10A 20A 30A 40A 50A
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
E , S
W I T C H I N G E N E R G Y L O S S E S
0?
10?20?30?40?50?60?
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
I C , COLLECTOR CURRENT
R G , GATE RESISTOR
Figure 13. Typical switching energy losses as a function of collector current
(inductive load, T j = 150°C, V CE = 400V,V GE = 0/+15V, R G = 16?)Figure 14. Typical switching energy losses as a function of gate resistor
(inductive load, T j = 150°C, V CE = 400V,V GE = 0/+15V, I C
= 20A)
E , S W I T C H I N G E N E R G Y L O S S E S
0°C
50°C 100°C 150°C
0.0mJ
0.2mJ 0.4mJ 0.6mJ 0.8mJ 1.0mJ 1.2mJ 1.4mJ
1.6mJ
Z t h J C , T R A N S I E N T T H E R M A L I M P E D A N C E
1μs
10μs 100μs 1ms 10ms 100ms 1s
10-4
10-3
10-2
10-1
100
T j , JUNCTION TEMPERATURE
t p , PULSE WIDTH
Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/+15V,I C = 20A, R G = 16?)
Figure 16. IGBT transient thermal
impedance as a function of pulse width (D = t p / T )
V G E , G A T E -E M I T T E R V O L T A G E
0nC
25nC 50nC 75nC 100nC 125nC
0V 5V
10V 15V
20V
25V
C , C A P A C I T A N C E
0V
10V 20V 30V
10pF
100pF
1nF
Q GE , GATE CHARGE
V CE , COLLECTOR -EMITTER VOLTAGE Figure 17. Typical gate charge (I C = 20A)
Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE = 0V, f = 1MHz)
t s c , S H O R T C I R C U I T W I T H S T A N D T I M E
10V
11V 12V 13V 14V 15V
0μs 5μs
10μs
15μs
20μs
25μs
I C (s c ), S H O R T C I R C U I T C O L L E C T O R C U R R E N T
10V
12V 14V 16V 18V
20V
0A 50A 100A 150A 200A 250A 300A 350A
V GE , GATE -EMITTER VOLTAGE
V GE , GATE -EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a function of gate-emitter voltage (V CE = 600V, start at T j = 25°C)Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V CE ≤ 600V, T j = 150°C)
dimensions
symbol
[mm]
[inch]
min
max min max A 9.7010.300.38190.4055B 14.8815.950.58580.6280C 0.650.860.02560.0339D 3.55 3.890.13980.1531E 2.60 3.000.10240.1181F 6.00 6.800.23620.2677G 13.0014.000.51180.5512H 4.35 4.750.17130.1870K 0.380.650.01500.0256L 0.95
1.32
0.0374
0.0520
M 2.54 typ.0.1 typ.N 4.30 4.500.16930.1772P 1.17 1.400.04610.0551T
2.30
2.72
0.0906
0.1071
TO-220AB
dimensions
symbol
[mm]
[inch]
min
max min max A 9.8010.200.38580.4016B 0.70 1.300.02760.0512C 1.00 1.600.03940.0630D 1.03 1.070.04060.0421E 2.54 typ.0.1 typ.F 0.650.850.02560.0335G 5.08 typ.
0.2 typ.
H 4.30 4.500.16930.1772K 1.17 1.370.04610.0539L 9.059.450.35630.3720M 2.30 2.500.09060.0984N 15 typ.0.5906 typ.
P 0.000.200.00000.0079Q 4.20 5.200.16540.2047R 8° max 8° max
S 2.40 3.000.09450.1181T 0.40
0.60
0.0157
0.0236
U 10.800.4252V 1.150.0453W 6.230.2453X 4.600.1811Y 9.400.3701TO-263AB (D 2Pak)
dimensions
symbol
[mm]
[inch]
min
max min max A 4.78 5.280.18820.2079B 2.29 2.510.09020.0988C 1.78 2.290.07010.0902D 1.09 1.320.04290.0520E 1.73 2.060.06810.0811F 2.67 3.180.10510.1252G 0.76 max 0.0299 max
H 20.8021.160.81890.8331K 15.6516.150.61610.6358L 5.21 5.720.20510.2252M 19.8120.680.77990.8142N 3.560
4.9300.14020.1941?P 3.610.1421
Q
6.12 6.22
0.2409
0.2449
TO-247AC
Figure A. Definition of switching times
τ1τ2nτ
r r r
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
? Infineon Technologies AG 2000
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.