NTLGD3502N
Power MOSFET
20 V, 5.8 A/4.6 A Dual N-Channel,
DFN6 3x3 mm Package
Features
??Exposed Drain Package
??Excellent Thermal Resistance for Superior Heat Dissipation ??Low Threshold Levels
??Low Profile (< 1 mm) Allows It to Fit Easily into Extremely Thin Environments
??This is a Pb-Free Device
Applications
??DC-DC Converters (Buck and Boost Circuits)
??Power Supplies
??Hard Disk Drives
MOSFET I MAXIMUM RATINGS (T J = 25°C unless otherwise noted)
Parameter Symbol Value Unit Drain-to-Source Voltage V DSS20V Gate-to-Source Voltage V GS±20V
Continuous Drain Current (Note 1)Steady
State
T A= 25°C I D 4.3A
T A= 85°C 3.0
t ≤ 5.0 s T A= 25°C 5.8
Power Dissipation (Note 1)Steady
State T A= 25°C
P D 1.74W
Pulsed Drain Current t ≤10 m s I DM17.2A
Operating Junction and Storage Temperature T J, T STG-55 to
150
°C Source Current (Body Diode)I S 1.6A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T L260°C MOSFET II MAXIMUM RATINGS (T J = 25°C unless otherwise noted)
Parameter Symbol Value Unit Drain-to-Source Voltage V DSS20V Gate-to-Source Voltage V
GS
±12V
Continuous Drain Current (Note 1)Steady
State
T A= 25°C I D 3.6A
T A= 85°C 2.5
t ≤ 5.0 s T A= 25°C 4.6
Power Dissipation (Note 1)Steady
State T A= 25°C
P D 1.74W
Pulsed Drain Current t ≤10 m s I DM13.8A
Operating Junction and Storage Temperature T J, T STG-55 to
150
°C Source Current (Body Diode)I S 1.7A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T L260°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
2.Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm
2, 1 oz. Cu
Device Package Shipping?
ORDERING INFORMATION
https://www.doczj.com/doc/9f6106505.html,
NTLGD3502NT1G DFN6
(Pb-free)
3000/T ape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.
NTLGD3502NT2G DFN6
(Pb-free)
3000/T ape & Reel
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit Junction-to-Ambient – Steady State (Note 1)R q JA72°C/W Junction-to-Ambient – t ≤ 5 s (Note 1)R q JA40
Junction-to-Ambient – Steady State min Pad (Note 2)R q JA110
Junction-to-Ambient – Pulsed (25% duty cycle) min Pad (Note 2)R q JA60
MOSFET I ELECTRICAL CHARACTERISTICS(T J = 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit Off Characteristics
Drain-to-Source Breakdown
Voltage
V(BR)DSS V GS = 0 V, I D = 250 m A20V
Drain-to-Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS/T J I D = 250 m A, ref to 25°C10mV/°C Zero Gate Voltage Drain Current I DSS V GS = 0 V, V DS = 16 V T J = 25°C 1.0m A
T J = 125°C10
Gate-to-Source Leakage Current I GSS V DS = 0 V, V GS = ±20 V±100nA On Characteristics (Note 3)
Gate Threshold Voltage V GS(TH)V GS = V DS, I D = 250 m A 1.0 1.7 2.0V Negative Threshold Temperature
Coefficient
V GS(TH)/T J-4.4mV/°C Drain-to-Source On Resistance R DS(on)V GS = 4.5 V, I D = 4.3 A5060m W Forward Transconductance g FS V DS = 10 V, I D = 4.0 A 5.9S Charges, Capacitances & Gate Resistance
Input Capacitance C ISS V GS = 0 V, f = 1 MHz, V DS = 10 V250480pF Output Capacitance C OSS138200
Reverse Transfer Capacitance C RSS5290
Total Gate Charge Q G(TOT)V GS = 4.5 V, V DS = 10 V; I D = 4.3 A
(Note 3)2.9 4.0nC
Gate-to-Source Charge Q GS 1.0
Gate-to-Drain Charge Q GD 1.1
Gate Resistance R G 1.5W Switching Characteristics, V GS = 4.5 V (Note 4)
Turn-On Delay Time t d(ON)V GS = 4.5 V, V DD = 10 V,
I D = 4.3 A, R G = 10 W 7.012ns
Rise Time t r17.525
Turn-Off Delay Time t d(OFF)8.615
Fall Time t f 3.3 5.0
Drain-Source Diode Characteristics
Forward Diode Voltage V SD V GS = 0 V, I S = 1.6 A T J = 25°C0.78 1.2V
T J = 125°C0.63
Reverse Recovery Time t RR V GS = 0 V, d ISD/d t = 100 A/m s,
I S = 1.0 A 16.7ns
Charge Time t a8.2
Discharge Time t b8.5
Reverse Recovery Charge Q RR7.0nC
3.Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%
4.Switching characteristics are independent of operating junction temperatures
MOSFET II ELECTRICAL CHARACTERISTICS(T J = 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit Off Characteristics
Drain-to-Source Breakdown
Voltage
V(BR)DSS V GS = 0 V, I D = 250 m A20V
Drain-to-Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS/T J I D = 250 m A, ref to 25°C22mV/°C Zero Gate Voltage Drain Current I DSS V GS = 0 V, V DS = 16 V T J = 25°C1m A
T J = 125°C10
Gate-to-Source Leakage Current I GSS V DS = 0 V, V GS = ±12 V±100nA On Characteristics (Note 5)
Gate Threshold Voltage V GS(TH)V GS = V DS, I D = 250 m A0.6 2.0V Negative Threshold Temperature
Coefficient
V GS(TH)/T J-2.8mV/°C Drain-to-Source On Resistance R DS(on)V GS = 4.5 V, I D = 3.4 A7090m W
V GS = 2.5 V, I D = 1.7 A95120
Forward Transconductance g FS V DS = 10 V, I D = 3.4 A 6.7S Charges, Capacitances & Gate Resistance
Input Capacitance C ISS V GS = 0 V, f = 1 MHz, V DS = 10 V144275pF Output Capacitance C OSS67125
Reverse Transfer Capacitance C RSS2240
Total Gate Charge Q G(TOT)V GS = 4.5 V, V DS = 10 V; I D = 3.4 A 2.1 5.0nC Threshold Gate Charge Q G(TH)0.11
Gate-to-Source Charge Q GS0.42
Gate-to-Drain Charge Q GD0.7
Switching Characteristics, V GS = 4.5 V (Note 6)
Turn-On Delay Time t d(ON)V GS = 4.5 V, V DD = 16 V,
I D = 3.4 A, R G = 10 W 4.810ns
Rise Time t r13.625
Turn-Off Delay Time t d(OFF)9.020
Fall Time t f 1.9 5.0
Drain-Source Diode Characteristics
Forward Diode Voltage V SD V GS = 0 V, I S = 1.7 A T J = 25°C0.8 1.15V
T J = 150°C0.63
Reverse Recovery Time t RR V GS = 0 V, d ISD/d t = 100 A/m s,
I S = 1.0 A 12ns
Charge Time t a8.0
Discharge Time t b 4.0
Reverse Recovery Charge Q RR 5.0nC
5.Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%
6.Switching characteristics are independent of operating junction temperatures
43I D , D R A I N C U R R E N T (A M P S )
210-50
-25
25
50
125
100
Figure 5. On-Resistance Variation with
Temperature T J , JUNCTION TEMPERATURE (°C)75
150
R D S (o n ), D R A I N -T O -S O U R C E R E S I S T A N C E (N O R M A L I Z E D )
520
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1015510R D S (o n ), D R A I N -T O -S O U R C E R E S I S T A N C E (W )
6789
4001000C , C A P A C I T A N C E (p F )
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
t , T I M E (n s )
V SD , SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
30020035050250150Figure 11. FET Thermal Response
t, TIME (s)
0.000001
0.00001
0.001
0.011
100
1000
0.1
R t h j a (t ), E F F E C T I V E T R A N S I E N T T H E R M A L R E S P O N S E
0.0001
0.110
43I D , D R A I N C U R R E N T (A M P S )
21
0-50
-25
25
50
125
100
Figure 16. On-Resistance Variation with
Temperature T J , JUNCTION TEMPERATURE (°C)75
150
R D S (o n ), D R A I N -T O -S O U R C E R E S I S T A N C E (N O R M A L I Z E D )
5
20
Figure 17. Drain-to-Source Leakage Current
vs. Voltage
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
101557R D S (o n ), D R A I N -T O -S O U R C E R E S I S T A N C E (W )
6
400
100
0C , C A P A C I T A N C E (p F )
R G , GATE RESISTANCE (OHMS)
Figure 20. Resistive Switching Time Variation
vs. Gate Resistance
t , T I M E (n s )
V SD , SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 21. Diode Forward Voltage vs. Current
300
200
Figure 22. FET Thermal Response
t, TIME (s)
0.000001
0.00001
0.001
0.01
1
100
1000
0.1
R t h j a (t ), E F F E C T I V E T R A N S I E N T T H E R M A L R E S P O N S E
0.0001
0.110
PACKAGE DIMENSIONS
6X
6X
DFN6 3*3 MM, 0.95 PITCH
CASE 506AG-01
ISSUE O
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
DIM MIN NOM MAX MILLIMETERS A 0.800.90 1.00A10.000.030.05
A30.20 REF b 0.350.400.45
D 3.00 BSC D2 1.00 1.10 1.20D30.650.750.85
E 3.00 BSC E2 1.50 1.60 1.70
e 0.95 BSC K 0.21------L 0.300.400.50
H10.05 REF H2
0.40 REF
NOTES:
1.DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994.
2.CONTROLLING DIMENSION: MILLIMETERS.
3.DIMESNION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30MM FROM TERMINAL.
4.COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTLGD3502NT2G NTLGD3502NT1G