10.0-40.0 GHz GaAs MMIC Distributed Amplifier
Features
Ultra Wide Band Driver Amplifier Self Biased Architecture 17.0 dB Small Signal Gain Chip Device Layout
(1) Measured using constant current.
December 2006 - Rev 19-Dec-06
XD1004-BD
Distributed Amplifier Measurements
10.0-40.0 GHz GaAs MMIC
Distributed Amplifier
December 2006 - Rev 19-Dec-06
S-Parameters
10.0-40.0 GHz GaAs MMIC Distributed Amplifier
December 2006 - Rev 19-Dec-06
Typcial S-Parameter Data for XD1004-BD Vd=5.0 V Id=115 mA Frequency S11S11S21S21S12S12S22S22(GHz)(Mag)(Ang)(Mag)(Ang)(Mag)(Ang)(Mag)(Ang)8.00.266-84.45 2.81779.530.0028-71.280.32975.789.00.327-91.33 3.90552.250.0029-91.040.27055.1310.00.377-101.79 5.14925.970.0041-105.020.25534.1011.00.424-115.11 6.898-6.890.0054-143.980.287 3.9612.00.433-126.578.344-34.990.0052-164.640.332-21.0313.00.412-135.709.429-64.240.0036167.860.374-46.4014.00.409-139.4110.013-92.800.0040162.520.415-71.9515.00.408-144.249.785-120.190.0027128.360.406-94.5416.00.425-148.349.206-143.620.0002108.130.392-112.1417.00.443-158.588.446-169.450.0024-117.530.362-132.1818.00.429-168.797.880172.650.0017-170.590.317-145.2219.00.393-178.037.447156.620.0019131.670.275-156.4020.00.351174.977.231141.980.0016-20.620.242-163.2921.00.302165.617.260126.800.0029-73.560.212-171.2322.00.223159.387.405111.790.0053-69.710.176-174.2523.00.109167.487.72191.590.0082-83.980.141-174.4524.00.082-136.037.96173.390.0129-96.110.114-172.9225.00.177-104.338.04854.710.0169-112.120.095-163.2226.00.308-108.688.04935.900.0204-129.340.109-145.4027.00.414-122.587.84316.710.0216-137.600.128-147.1428.00.488-134.127.618-2.030.0250-148.720.141-150.1229.00.545-149.537.229-24.450.0282-160.890.156-159.5530.00.563-160.84 6.955-41.890.0289-170.710.155-170.4031.00.551-170.23 6.762-59.400.0302-176.930.141179.4532.00.514-179.06 6.558-76.390.0314175.020.118170.7433.00.473175.85 6.405-93.810.0327168.190.092165.9634.00.430171.06 6.263-111.510.0332159.360.073160.0235.00.371163.46 6.137-134.090.0336145.030.064158.7736.00.324159.72 6.172-152.840.0297132.800.064152.4637.00.268149.53 6.316-172.870.0267118.950.090132.6138.00.156127.96 6.684163.950.019498.260.14698.1839.00.111-1.01 6.681134.930.008727.650.26358.1840.00.478-67.43 6.83098.740.0160-109.830.40514.9541.00.733-116.92 4.45349.920.0280-154.330.449-29.1942.00.784-134.69 2.91924.620.0329-165.520.450-49.4643.00.807-147.18 1.993 4.190.0385-178.140.454-64.8044.00.819-158.53 1.406-13.990.0396163.900.437-76.6545.00.818-165.72 1.022-29.200.0364161.740.419-83.5946.00.814-173.650.808-42.510.0368160.260.430-83.8547.00.786175.950.657-60.820.0399150.910.455-95.9648.0
0.760
165.30
0.665
-75.14
0.0353
138.11
0.451
-98.88
Vd
1.250 Mechanical Drawing
10.0-40.0 GHz GaAs MMIC Distributed Amplifier
XD1004-BD December 2006 - Rev 19-Dec-06
10.0-40.0 GHz GaAs MMIC
Distributed Amplifier
App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain bias. Bias is nominally Vd=5V, Id=115 mA.
App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.Additional DC bypass capacitance (~0.01 uF) is also recommended.
December 2006 - Rev 19-Dec-06
M T T F (h o u r s )
Handling and Assembly Information
10.0-40.0 GHz GaAs MMIC
Distributed Amplifier
Part Number for Ordering
Description
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. he gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 oC (Note: Gold Germanium should be avoided). The work station temperature should be 310 oC +/- 10 oC. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
XD1004-BD-000V RoHS compliant die packed in vacuum release gel packs XD1004-BD-EV1
XD1004-BD evaluation module
December 2006 - Rev 19-Dec-06