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SKIIP32NAB12中文资料

SKIIP32NAB12中文资料
SKIIP32NAB12中文资料

? by SEMIKRON 0898

B 16 – 31

Absolute Maximum Ratings

Symbol Conditions 1)

Values Units Inverter V CES V GES I C I CM

I F = –I C I FM = –I CM

T heatsink = 25 / 80 °C

t p < 1 ms; T heatsink = 25 / 80 °C T heatsink = 25 / 80 °C

t p < 1 ms; T heatsink = 25 / 80 °C

600± 2050 / 35100 / 70

57 / 38114 / 76V V A A A A Bridge Rectifier V RRM I D I FSM

I 2t T heatsink = 80 °C

t p = 10 ms; sin. 180 °, T j = 25 °C t p = 10 ms; sin. 180 °, T j = 25 °C 80025370680

V A A A 2s T j T stg V isol AC, 1 min.

– 40 . . . + 150– 40 . . . + 125

2500

°C °C V

SKiiP 31 NAB 06

MiniSKiiP 3

SEMIKRON integrated intelligent Power SKiiP 31 NAB 06

3-phase bridge rectifier +braking chopper +

3-phase bridge inverter

Case M3

UL recognized file no. E63532

?specification of temperature sensor see part A

?

common characteristics see page B16–3

Options

?also available with faster IGBTs (type ... 063), data sheet on request

1)T heatsink = 25 °C, unless otherwise specified

2)

CAL = Controlled Axial Lifetime Technology (soft and fast recovery)

* For diagrams of the Chopper IGBT please refer to SKiiP 22 NAB 06

B 16 – 32

0698

? by SEMIKRON

Fig. 3Turn-on /-off energy = f (I C )

Fig. 4Turn-on /-off energy = f (R G )

T j = 125 °C V CE = 300 V V GE = ± 15 V I C = 50 A

T j = 125 °C V CE = 300 V V GE = ± 15 V R G = 22 ?

I Cpuls = 50 A

V GE = 0 V f = 1 MHz

Fig. 1Typ. output characteristic, t p = 80 μs; 25 °C

Fig. 2Typ. output characteristic, t p = 80 μs; 125 °C

Fig. 5Typ. gate charge characteristic Fig. 6Typ. capacitances vs. V CE

? by SEMIKRON

0698

B 16 – 3

Fig. 9Turn-off safe operating area (RBSOA) of the IGBT Fig. 10Safe operating area at short circuit of the IGBT

T j

= ≤ 150 °C V GE = ± 15 V t sc = ≤ 10 μs L ext < 25 nH

T j = ≤ 150 °C V GE = ± 15 V

Fig. 7Rated current of the IGBT I Cop / I C = f (T h )

T j = 150 °C V GE = ≥ 15 V

00.2

0.4

0.6

0.8

1.0

1.2

25

50

75

100

125

150I Cop /I C Mini0607

T h [°C]

Fig. 11Typ. freewheeling diode forward characteristic Fig. 12Forward characteristic of the input bridge diode https://www.doczj.com/doc/65230477.html,mon characteristics of MiniSKiiP

MiniSKiiP 600 V

MiniSKiiP 3

SKiiP 30 NAB 06 SKiiP 31 NAB 06 SKiiP 32 NAB 06 SKiiP 30 NAB 12 SKiiP 31 NAB 12 SKiiP 32 NAB 12Circuit

Case M3

Layout and connections for the

customer’s printed circuit board

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