Electrical Characteristics
at T j = 25°C, unless otherwise specified.Parameter
Symbol
Values Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage V GS = 0, I D = 0.25 mA V (BR)DSS
50
––V
Gate threshold voltage V GS =V DS , I D = 1 mA
V GS(th)
2.5
3.0
3.5
Zero gate voltage drain current V GS = 0 V,V DS = 50 V
T j = 25°C T j = 125°C I DSS
––
0.110
1.0100
μA
Gate-source leakage current V GS = 20 V,V DS = 0
T j = 25°C T j = 150°C I GSS
––
102.01004.0nA μA Drain-source on-state resistance V GS = 10 V , I D =47 A R DS(on)
–
0.012
0.018
?
Dynamic Characteristics Forward transconductance
V DS ≥ 2×I D ×R DS(on)max ,I D = 47 A g fs
20.0
43.0–
S Input capacitance
V GS = 0, V DS = 25 V,f = 1 MHz C iss –
2.9 4.3nF
Output capacitance
V GS = 0, V DS = 25 V,f = 1 MHz C oss
–
1.4
2.1Reverse transfer capacitance V GS = 0, V DS = 25 V,f = 1 MHz
C rss
–0.50.8Turn-on time t on , (t on =t d(on) +t r )V CC = 30 V,V GS = 10 V,I D = 3 A,R GS = 50?t d(on)–5075ns
t
r
–150230Turn-off time t off , (t off =t d(off) +t f )V CC = 30 V,V GS = 10 V,I D = 3 A,R GS = 50?t d(off)–350560t
f
–
250
330
Electrical Characteristics (cont ’d)
at T j = 25°C, unless otherwise specified.Parameter
Symbol
Values Unit
min.
typ.
max.
Reverse Diode
Continuous source current I S ––58A Pulsed source current I SM –
–
232
Diode forward on-voltage I F = 58 A, V GS = 0 V
V SD
– 1.4 1.8
V
Reverse recovery time
I F =I S , d i F /d t = 100 A/μs,V R = 30 V t rr
–
100–
ns Reverse recovery charge
I F =I S , d i F /d t = 100 A/μs,V R = 30 V Q rr
–
0.3
–
μC
Temperature Sensor
Forward voltage
I TS(on) = 10 mA,T j = – 55 ... + 150°C Sensor override,t p ≤ 100μs T j = – 55 ... + 160°C V TS(on)
0.7–
1.4– 1.510
V
Forward current T j = – 55 ... + 150°C
Sensor override,t p ≤ 100μs T j = – 55 ... + 160°C I TS(on)
––
––10600mA
Holding current,V TS(off) = 5 V,T j = 25°C T j = 150°C
I H 0.050.050.1
0.20.50.3
Switching temperature V TS = 5 V
T TS(on)
150
––
°C
Turn-off time
V TS = 5 V,I TS(on) = 2 mA
t off
0.5
–
2.5
μs
Examples for short-circuit protection
at T j = – 55 ... + 150°C, unless otherwise specified.
Parameter Symbol Examples Unit
12–
Drain-source voltage V DS1530–V Gate-source voltage V GS 6.4 5.1–
Short-circuit current I SC<147<67–A Short-circuit dissipation P SC<2200<2000–W Response time
T j = 25°C, before short circuit
t
SC(off)
<25<25–
ms
Short-circuit protection I SC =f (V DS) Parameter:V GS
Diagram to determine I SC for T j=–55...+150°C Max. gate voltage V GS(SC) =f (V DS) Parameter:T j=– 55... +150°C
Max. power dissipation P tot =f (T C) Typical output characteristics I D =f (V DS) Parameter:t p=80μs Typ. drain-source on-state resistance R
DS(on)
=f (I D)
Parameter:V GS
Safe operating area I D =f (V DS) Parameter:D = 0.01,T C=25°C
Drain-source on-state resistance
R
DS(on)
=f (T j)
Parameter:I D=47 A,V GS = 10 V (spread)
Typ. transfer characteristic
I
D
=f (V GS)
Parameter:t p = 80μs,V DS = 25 V Gate threshold voltage V GS(th) =f (T j) Parameter:V DS =V GS,I D=1 mA Typ. transconductance g fs =f (I D) Parameter:t p = 80μs,V DS = 25 V
Continuous drain current I D=f (T C) Parameter:V GS≥ 10 V
Typ. gate-source leakage current I
GSS
=f (T C)
Parameter:V GS = 20 V,V DS = 0Forward characteristics of reverse diode I
F
=f (V SD)
Parameter:T j,t p = 80μs (spread)
Typ. capacitances C =f (V DS) Parameter:V GS = 0,f=1 MHz
Transient thermal impedance Z thJC =f (t p) Parameter:D =t p/T
TO-218 AA Ordering Code Standard C67078-S5100-A3
Edition 04.97
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
? Infineon Technologies AG 2000.
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