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3DUDPHWHU6\PERO&RQGLWLRQV PLQ PD[8QLW Collector-emitter voltage V CES V GE = 0 V, T vj≥ 25 °C1200V DC collector current I C75A Peak collector current I CM Limited by T vjmax150A Gate-emitter voltage V GES-2020V
IGBT short circuit SOA t psc V CC = 900 V, V CEM ≤ 1200 V
V GE≤ 15 V, T vj≤ 125 °C
10μs
Junction temperature T vj-40150°C 1) Maximum rated values indicate limits beyond which damage to the device may occur
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8QLW Collector (-emitter)breakdown voltage V (BR)CES V GE = 0 V, I C = 1 mA, T vj = 25 °C 1200V T vj = 25 °C 1.7
1.9
2.3
V Collector-emitter saturation voltage V CE sat I C = 75 A, V GE = 15 V T vj = 125 °C 2.1
V T vj = 25 °C 100μA Collector cut-off current I CES V CE = 1200 V, V GE = 0 V
T vj = 125 °C
300
μA Gate leakage current I GES V CE = 0 V, V GE = ±20 V, T vj = 125 °C -200200nA Gate-emitter threshold voltage V GE(TO)I C = 3 mA, V CE = V GE , T vj = 25 °C 4.5
6.5
V Gate charge Q ge I C = 75 A, V CE = 600 V, V GE = -15 ..15 V 950nC
Input capacitance C ies 6.70Output capacitance
C oes 0.48Reverse transfer capacitance C res V CE = 25 V, V GE = 0 V, f = 1 MHz,T vj = 25 °C
0.31nF
Internal gate resistance R Gint 5?T vj = 25 °C 190Turn-on delay time t d(on)T vj = 125 °C 210ns T vj = 25 °C 65Rise time
t r V CC = 600 V, I C = 75 A,R G = 15 ?, V GE = ±15 V,L σ = 60 nH,inductive load
T vj = 125 °C 65ns T vj = 25 °C 560Turn-off delay time t d(off)T vj = 125 °C 620ns T vj = 25 °C 40Fall time
t f
V CC = 600 V, I C = 75 A,R G = 15 ?, V GE = ±15 V,L σ = 60 nH,inductive load
T vj = 125 °C 50ns T vj = 25 °C 7.2
Turn-on switching energy E on
V CC = 600 V, I C = 75 A,V GE = ±15 V, R G = 15 ?,L σ = 60 nH,inductive load,
FWD: 5SLX12F1200T vj = 125 °C 10mJ
T vj = 25 °C 5
Turn-off switching energy E off
V CC = 600 V, I C = 75 A,V GE = ±15 V, R G = 15 ?,L σ = 60 nH,inductive load
T vj = 125 °C
7.7mJ
Short circuit current I SC
t psc V 9GE = 15 V, T vj = 125 °C,V CC = 900 V, V CEM 9
420
A
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Overall die L x W
11.0 x 11.0
mm exposed front metal
L x W (except gate pad)
9.5 x 9.5
mm gate pad
L x W 1.2 x 1.2
mm Dimensions
thickness
130 ± 20
μm front AISi1
4μm Metallization
1)
back
AI / Ti / Ni / Ag
1.8
μm
1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors,
Doc. No. 5SYA2033-01 April 02.
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This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
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6HPLFRQGXFWRUV Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419Fax +41 (0)58 586 1306Email abbsem@https://www.doczj.com/doc/4911028136.html,
Internet
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collector-emitter voltage