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ISL9V5045S3ST;中文规格书,Datasheet资料

ISL9V5045S3ST;中文规格书,Datasheet资料
ISL9V5045S3ST;中文规格书,Datasheet资料

l Ignition IGBT

EcoSPARK N-Channel Ignition IGBT

500mJ , 450V Features

SCIS Energy = 500mJ at T J = 25o C Logic Level Gate Drive Applications

Automotive Ignition Coil Driver Circuits Coil - On Plug Applications

General Description

The ISL9V5045S3ST is next generation ignition IGBT that offer outstanding SCIS capability in the industry

standard D2-Pak (TO-263) plastic package. This device is intended for use in automotive ignition circuits,

specifically as a coil drivers. Internal diodes provide voltage clamping without the need for external components.devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information.

Package GATE

COLLECTOR

EMITTER

R 2

R 1

Symbol

JEDEC TO-263AB

GATE EMITTER

COLLECTOR (FLANGE)

D 2-Pak

N-Channe Qualified to AEC Q101 RoHS Compliant

?EcoSPARK ?

l Ignition IGBT

N-Channe

Switching Characteristics

t d(ON)R Current T urn-On Delay Time-Resistive V CE = 14V , R L = 1?, V GE = 5V , R G = 1K ?T J = 25°C, See Fig. 12-0.74μs t rR Current Rise Time-Resistive

- 2.17μs t d(OFF)L Current T urn-Off Delay Time-Inductive V CE = 300V , L = 2mH , V GE = 5V , R G = 1K ?T J = 25°C, See Fig. 12-10.815μs t fL Current Fall Time-Inductive - 2.815μs SCIS

Self Clamped Inductive Switching

T J = 25°C, L = 650 μH, R G = 1K ?, V GE = 5V , See Fig. 1 & 2

--500

mJ

Thermal Characteristics

R θJC

Thermal Resistance Junction-Case

TO-263

--0.5

°C/W

Typical Characteristics

Figure 1. 05

101520253035400

25

50

75

100

125

150

175

200

t CLP , TIME IN CLAMP (μS)

I S C I S , I N D U C T I V E S W I T C H I N G C U R R E N T (A )

T J = 25°C

R G = 1K ?, V GE = 5V ,V dd = 14V

T J = 150°C

SCIS Curves valid for V clamp Voltages of <480V

Self Clamped Inductive Switching

Current vs Time in Clamp Figure 2. 05

1015202530

3540

1

2

3

4

5

6

7

8

9

10

I S C I S , I N D U C T I V E S W I T C H I N G C U R R E N T (A )

L, INDUCTANCE (mHy)

T J = 150°C

R G = 1K ?, V GE = 5V ,V dd = 14V

T J = 25°C

SCIS Curves valid for V clamp Voltages of <480V

Self Clamped Inductive Switching

Current vs Inductance

l Ignition IGBT

N-Channe

l Ignition IGBT

N-Channe

Figure 9. 05101520253025

50

75

100

125

150

175

I C E , D C C O L L E C T O R T C , CASE TEMPERATURE (°C)DC Collector Current vs Case

Temperature

Figure 10. 0.81.0

1.2

1.4

-50

-25

25

50

75

100

125

150

175

V T H , T H R E S H O L D T J , JUNCTION TEMPERATURE (°C)

Threshold Voltage vs Junction

Temperature

Figure 11. L E A K A G E C U R R E N T (μA )

T J , JUNCTION TEMPERATURE (°C)100010

0.110000

100

1

25-25175

12575-50

050100150V ECS = 24V

V CES = 300V

V CES = 250V

Leakage Current vs Junction

Temperature

Figure 12. 25

175

1257550100150T J , JUNCTION TEMPERATURE (°C)

S W I T C H I N G T I M E (μS )

2016126

2I CE = 6.5A, V GE = 5V, R G = 1K ?

Resistive t OFF

Inductive t OFF

Resistive t ON

10141884

Switching Time vs Junction

Temperature

Figure 13. 0500

1000

1500

2000

25003000

510152025

C , C A P A C I T A N C E (p F )

V CE , COLLECTOR TO EMITTER VOLTAGE (V)C IES

FREQUENCY = 1 MHz

C OES

C RES

Capacitance vs Collector to Emitter

Voltage

Figure 14. Q G , GATE CHARGE (nC)

V G E , G A T E T O E M I T T E R V O L T A G E (V )

248

010203040

50

35761I G(REF) = 1mA, R L = 0.6?, T J = 25°C

V CE = 6V

V CE = 12V

Gate Charge

l Ignition IGBT

N-Channe

Figure 15. Breakdown Voltage 43043544044545045510

100

10005000

B V

C E R , B R E A K

D O W N R G , SERIES GAT

E RESISTANCE (?)

T J = 25°C

T J = 175°C

vs Series Gate Resistance

Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case

10-310-2

10-1

100

10

-6

10-5

10-4

10-3

10-2

Z t h J C , N O R M A L I Z E D T H E R M A L R E S P O N S E

T 1, RECTANGULAR PULSE DURATION (s)

t 1

t 2

P D

DUTY FACTOR, D = t 1 / t 2

PEAK T J = (P D X Z θJC X R θJC ) + T C

0.50.2

0.10.050.02

0.01

SINGLE PULSE

Test Circuits and Waveforms

Figure 17. Inductive Switching Test Circuit

R G

G

C

E

V CE

L

PULSE GEN

DUT

Figure 18. R G = 1K ?+-V CE

DUT 5V

C

G

E

LOAD

R or L t ON and t OFF Switching Test Circuit

l Ignition IGBT

N-Channe

CTHERM6 2 tl 170e-3RTHERM1 th 6 3e-3RTHERM2 6 5 20e-3RTHERM3 5 4 50e-3RTHERM4 4 3 60e-3RTHERM5 3 2 100e-3RTHERM6 2 tl 127e-3

SABER Thermal Model

SABER thermal model

ISL9V5045S3S / ISL9V5045S3template thermal_model th tl thermal_c th, tl {

ctherm.ctherm1 th 6 = 82e-4ctherm.ctherm2 6 5 = 105e-4ctherm.ctherm3 5 4 = 12e-3ctherm.ctherm4 4 3 = 33e-3ctherm.ctherm5 3 2 = 55e-3ctherm.ctherm6 2 tl = 170e-3rtherm.rtherm1 th 6 = 3e-3rtherm.rtherm2 6 5 = 20e-3rtherm.rtherm3 5 4 = 50e-3rtherm.rtherm4 4 3 = 60e-3rtherm.rtherm5 3 2 = 100e-3rtherm.rtherm6 2 tl = 127e-3}

RTHERM4RTHERM6RTHERM5RTHERM3

RTHERM2CTHERM4

CTHERM6

CTHERM5

CTHERM3

CTHERM2

tl 2

3

4

5

6

CASE

l Ignition IGBT

N-Channe

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

Auto-SPM?

Build it Now?CorePLUS?CorePOWER?CROSSVOLT?

CTL?

Current Transfer Logic? EcoSPARK?EfficientMax? EZSWITCH?*

?*

DEUXPEED?

?

Fairchild?

Fairchild Semiconductor?FACT Quiet Series? FACT?

FAST?

FastvCore?

FETBench?FPS?

F-PFS?

FRFET?

Global Power Resource SM

Green FPS?

Green FPS? e-Series?

G max?

GTO?

IntelliMAX?

ISOPLANAR?

MegaBuck?

MICROCOUPLER?

MicroFET?

MicroPak?

MillerDrive?

MotionMax?

Motion-SPM?

OPTOLOGIC?

OPTOPLANAR?

?

PDP SPM?

PowerTrench?

PowerXS?

Programmable Active Droop?

QFET?

QS?

Quiet Series?

RapidConfigure?

?

Saving our world, 1mW/W/kW at a time?

SignalWise?

SmartMax?

SMART START?

SPM?

STEALTH?

SuperFET?

SuperSOT?-3

SuperSOT?-6

SuperSOT?-8

SupreMOS?

SyncFET?

Sync-Lock?

?*

The Power Franchise?

TinyBoost?

TinyBuck?

TinyCalc?

TinyLogic?

TINYOPTO?

TinyPower?

TinyPWM?

TinyWire?

TriFault Detect?

TRUECURRENT?*

μSerDes?

UHC?

Ultra FRFET?

UniFET?

VCX?

VisualMax?

XS?

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, https://www.doczj.com/doc/436959916.html,, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. ISL9V5045S3ST l Ignition IGBT N-Channe

分销商库存信息: FAIRCHILD

ISL9V5045S3ST

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