A,Dec,2010
2. COLLECTOR
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SA1160 TRANSISTOR (PNP)
FEATURES
z High DC Current Gain and Excellent h FE Linearity z Low Saturation Voltage
MAXIMUM RATINGS (T a =25℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)
Parameter
Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-1mA,I E =
0 -20 V Collector-emitter breakdown voltage V (BR)CEO
I C =-10mA,I B =
0 -10 V Emitter-base breakdown voltage V (BR)EBO
I E =-1mA,I C =0 -6
V
Collector cut-off current I CBO V CB =-20V,I E =
0 -0.1 μA Emitter cut-off current I EBO V EB =-6V,I C =
0 -0.1 μA h FE(1) V CE =-1V, I C =-0.5A 140 600
DC current gain
h FE(2) V CE =-1V, I C =-4A 60 Collector-emitter saturation voltage V CE(sat) I C =-2A,I B =-0.05A -0.5 V Base-emitter voltage V BE V CE =-1V, I C =-2A -1.5 V Collector output capacitance C ob V CB =-10V,I E =0, f=1MHz 50
pF Transition frequency
f T
V CE =-1V,I C =-0.5A
140
MHz
CLASSIFICATION OF h FE (1)
RANK A B
C
RANGE 140-280 200-400 300-600
Symbol Parameter Value Unit V CBO Collector-Base Voltage -20 V V CEO Collector-Emitter Voltage -10 V V EBO Emitter-Base Voltage -6 V I C Collector Current
-2 A P C Collector Power Dissipation
900 mW R θJA Thermal Resistance From Junction To Ambient 139 ℃/W T j Junction Temperature 150 ℃ T stg
Storage Temperature
-55~+150
℃
https://www.doczj.com/doc/465394675.html,
【南京南山半导体有限公司 — 长电三极管选型资料】
Sponge strip
2000 pcs
Sponge strip The top gasket
Label on the Inner Box
Label on the Outer Box
Inner Box: 333 mm ×203mm ×42mm
Outer Box: 493 mm × 400mm × 264mm
QA Label
Seal the box with the tape
Stamp “EMPTY”
on the empty box
The top gasket
Inner Box: 240 mm ×165mm ×９５mm
Label on the Inner Box
Outer Box: 525 mm × 360mm × 262mm
Label on the Outer Box
QA Label
Seal the box with the tape
Stamp “EMPTY” on the empty box
三极管的封装及引脚识别 三极管的封装形式是指三极管的外形参数，也就是安装半导体三极管用的外壳。材料方面，三极管的封装形式主要有金属、陶瓷和塑料形式；结构方面，三极管的封装为TO×××，×××表示三极管的外形；装配方式有通孔插装（通孔式）、表面安装（贴片式）和直接安装；引脚形状有长引线直插、短引线或无引线贴装等。常用三极管的封装形式有TO－92、TO－126、TO－3、TO－220TO等。 国产晶体管按原部标规定有近30种外形和几十种规格，其外形结构和规格分别用字母和数字表示，如TO－162、TO－92等。晶体管的外形及尺寸如图1所示。
图1 晶体管的外形及尺寸 1 封装 1.金属封装 （1）B型：B型分为B－1、B－2、…、B－6共6种规格，主要用于1W及1W以下的高频小功率晶体管，其中B－1、B－3型最为常用。引脚排列：管底面对自己，由管键起，按顺时针方向依次为E、B、C、D（接地极）。其封装外形如图2（a）所示。 （2）C型：引脚排列与B型相同，主要用于小功率。其封装外形如图2（b）所示。 （3）D型：外形结构与B型相同。引脚排列：管底面对自己，等腰三角形的底面朝下，按顺时针方向依次为E、B、C。其封装外形如图2（c）所示。 （4）E型：引脚排列与D型相同，封装外形如图3（d）所示。 （5）F型：该型分为F－0、F－1～F－4共5种规格，各规格外形相同而尺寸不同，主要用于低频大功率管封装，使用最多的是F－2型封装。引脚排列：管底面对自己，小等腰三角形的庵面朝下，左为E，右为B，两固定孔为C。其封装外形如图2（e）所示。¨ （6）G型：分为G－1～G－6共6种规格，主要用于低频大功率晶体管封装，使用最多的是G－3、G－4型。其中G－1、G－2为圆形引出线，G－3～G－6为扁形引出线。引脚排列：管底面对自己，等腰三角形的底面朝下，按顺时针方向依次为E、B、C。其封装外形如图2（f）所示。 2.塑料封装 （1）S－1型、S－2型、S－4型：用于封装小功率三极管，其中以S－1型应用最为普遍。S－1、S－2、S－3型管的封装外形如图2（g）、（h）、（i）所示。引脚排列：平面朝外，半圆形朝内，引脚朝上时从左到右为E、B、C。 （2）S－5型：主要用于大功率三极管。引脚排列：平面朝外，半圆形朝内，引脚朝上时从左到右为E、B、C。S－5型的封装外形如图2（j）所示。 （3）S－6lA、S－6B、S－7、S－8型：主要用于大功率三极管，其中以S－7型最为常用。S－6A 引脚排列：切角面面对自己，引脚朝下，从左到右依次为B、C、E。它们的引脚排列与外形分别如图5.12（k）、（l）、（m）、（n）所示。 （4）常见进口管的外形封装结构：TO－92与部标S－1相似，TO－92L与部标S－4相似，TO126与S－5相似，TO-202与部标S－7相似。
A,Dec,2010 2. COLLECTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SA935 TRANSISTOR (PNP) FEATURES z General Purpose Switching Application MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = -50μA,I E = 0 -80 V Collector-emitter breakdown voltage V (BR)CEO I C =-2mA,I B = 0 -80 V Emitter-base breakdown voltage V (BR)EBO I E =-50μA,I C =0 -5 V Collector cut-off current I CBO V CB =-50V,I E = 0 -0.5 μA Emitter cut-off current I EBO V EB =-4V,I C = 0 -0.5 μA DC current gain h FE V CE =-3V, I C =-100mA 82 390 Collector-emitter saturation voltage V CE(sat) I C =-500mA,I B =-50mA -0.4 V Collector output capacitance C ob V CB =-10V,I E =0, f=1MHz 20 pF Transition frequency f T V CE =-10V,I C =-50mA 100 MHz CLASSIFICATION OF h FE RANK P Q R RANGE 82-180 120-270 180-390 Symbol Parameter Value Unit V CBO Collector-Base Voltage -80 V V CEO Collector-Emitter Voltage -80 V V EBO Emitter-Base Voltage -5 V I C Collector Current -0.7 A P C Collector Power Dissipation 750 mW R θJA Thermal Resistance From Junction To Ambient 167 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ https://www.doczj.com/doc/465394675.html, 【南京南山半导体有限公司 — 长电三极管选型资料】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2SC4617 TRANSISTOR (NPN) FEATURES z Low Cob:Cob=2.0pF(Typ) z Complement to 2SA1774 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions M in T yp M ax U nit Collector-base breakdown voltage V (BR)CBO I C =50uA, I E = 0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 50 V Emitter-base breakdown voltage V (BR)EBO I E =50uA, I C =0 7 V Collector cut-off current I CBO V CB =60V, I E =0 0.1 μA Emitter cut-off current I EBO V EB =7V, I C =0 0.1 μA DC current gain h FE V CE =6V, I C = 1mA 120 560 Collector-emitter saturation voltage V CE(sat) I C =50mA, I B = 5mA 0.4 V Transition frequency f T V CE =12V, I C =2mA, f=100MHz 180 MHz Collector output capacitance C ob V CB =12V, I E =0, f=1MHz 3.5 pF CLASSIFICATION OF h FE Rank Q R S Range 120-270 180-390 270-560 Marking BQ BR BS A,May,2011
JX SOT23 BAV170 B dual cc Si diode low Ir JY SOT23 BAV199 dioda-2x JY SOT23 BAV199 D dual series Si diode lowIr JZ SOT23 BAW 156 JZ SOT23 BAW156 A dual ca Si diode low Ir K SCD80 BBY52-02W I UHF varicap 1.75-1.25pF K SOD323 BAT68-03W I BAT68 Schottky K SOT23 2SK211 JFET K SOT323 MRF917 N npn RF fT 6GHz K0 SOT23 HSMP-3830 C gp pin diode HP3830 K1 SOT23 BCW71 NPN K1 SOT23 BCW71 N BC107A K1 SOT23 HSMP-3831 K gp pin diode HP3830 K14 DTA114G N pnp sw 50V 100mA w. b-eres K15 DTA124G N pnp sw 50V 50mA w. b-e res K1p SOT23 BCW71 N BC107A K1t SOT23 BCW71 N BC107A K1X SOT23 KSC3265 NPN K2 SOT23 BCW72 NPN K2 SOT23 BCW72 N BC107B ZXT300 K2 SOT23 HSMP-3832 D dual HP3830 pin diode K24 DTC114G N npn sw 50V 100mA w. b-eres K25 DTA124G N pnp sw 50V 50mA w. b-e res K2p SOT23 BCW72 N BC107B ZXT300
三极管的封装形式 是指三极管的外形参数，也就是安装半导体三极管用的外壳。材料方面，三极管的封装形式主要有金属、陶瓷和塑料形式；结构方面，三极管的封装为TO×××，×××表示三极管的外形；装配方式有通孔插装（通孔式）、表面安装（贴片式）和直接安装；引脚形状有长引线直插、短引线或无引线贴装等。常用三极管的封装形式有TO－92、TO－126、TO－3、TO－220TO等。 国产晶体管按原部标规定有近30种外形和几十种规格，其外形结构和规格分别用字母和数字表示，如TO－162、TO－92等。晶体管的外形及尺寸如图1所示。
图1 晶体管的外形及尺寸 1 封装 1.金属封装 （1）B型：B型分为B－1、B－2、…、B－6共6种规格，主要用于1W及1W以下的高频小功率晶体管，其中B－1、B－3型最为常用。引脚排列：管底面对自己，由管键起，按顺时针方向依次为E、B、C、D（接地极）。其封装外形如图2（a）所示。 （2）C型：引脚排列与B型相同，主要用于小功率。其封装外形如图2（b）所示。 （3）D型：外形结构与B型相同。引脚排列：管底面对自己，等腰三角形的底面朝下，按顺时针方向依次为E、B、C。其封装外形如图2（c）所示。 （4）E型：引脚排列与D型相同，封装外形如图3（d）所示。 （5）F型：该型分为F－0、F－1～F－4共5种规格，各规格外形相同而尺寸不同，主要用于低频大功率管封装，使用最多的是F－2型封装。引脚排列：管底面对自己，小等腰三角形的庵面朝下，左为E，右为B，两固定孔为C。其封装外形如图2（e）所示。¨ （6）G型：分为G－1～G－6共6种规格，主要用于低频大功率晶体管封装，使用最多的是G－3、G－4型。其中G－1、G－2为圆形引出线，G－3～G－6为扁形引出线。引脚排列：管底面对自己，等腰三角形的底面朝下，按顺时针方向依次为E、B、C。其封装外形如图2（f）所示。 2.塑料封装
A,Oct,2010 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST4403 TRANSISTOR (PNP) FEATURES ● Complementary To MMST4401 ● Small Surface Mount Package MARKING:K3T MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -40 V V EBO Emitter-Base Voltage -5 V I C Collector Current -600 mA P C Collector Power Dissipation 200 mW R ΘJA Thermal Resistance From Junction To Ambient 625 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100μA, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -40 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA, I C =0 -5 V Collector cut-off current I CBO V CB =-35V, I E =0 -100 nA Collector cut-off current I CEO V CE =-35V, I B =0 -500 nA V CE =-1V, I C =-100μA 30 V CE =-1V, I C =-1mA 60 V CE =-1V, I C =-10mA 100 V CE =-2V, I C =-150mA 100 300 DC current gain h FE V CE =-2V, I C =-500mA 20 I C =-150mA, I B =-15mA -0.4 V Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B =-50mA -0.75 V I C =-150mA, I B =-15mA -0.75 -0.95 V Base-emitter saturation voltage V BE(sat) I C =-500mA, I B =-50mA -1.3 V Transition frequency f T V CE =-10V,I C =-20mA , f=100MHz 200 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 8.5 pF https://www.doczj.com/doc/465394675.html, 【南京南山半导体有限公司 — 长电三极管选型资料】
常用发射三极管的参数 型号功率增益电压频率工作状态封装123脚 2N3375 10W 5dB 28V 400MHz FM/AM/SSB TO-60 2N3553 2.5W 10dB 28V 175MHz FM/AM TO-39 CBE 2N3632 20W 7dB 28V 175MHz FM TO-60 2N3866 5W 10dB 28V 400MHz WINTransceiver TO-39 CBE 2N3924 4W 6dB 13.6V 175MHz WINTransceiver TO-39 2N4427 2W 10dB 12V 175MHz WINTransceiver TO-39 2N5108 1W 5dB 24V 1200MHz WINTransceiver TO-39 2N5109 3.5W 11dB 15V 200MHz WINTransceiver TO-39 2N5421 3W 9dB 13.5V 175MHz WINTransceiver TO-39 2N5913 2W 7dB 12.5V 175MHz WINTransceiver TO-39 2N5943 1W 8dB 15V 400MHz FM TO-39 2SC730 0.8W 10dB 13.5V 175MHz FM TO-39 CBE 2SC1096 10W 60MHz FM TO-220 2SC1173 10W 100MHz FM/AM/SSB TO-220 2SC1306 16W 30MHz FM/AM/SSB TO-220 BCE 2SC1307 16W 12dB 12V 30MHz FM/AM/SSB TO-220 BCE 2SC1590 5W 10dB 12.5V 136-174MHz FM TO-220 BEC 2SC1591 14W 7.5dB 12.5V 136-174MHz FM TO-220 BEC 2SC1678 5W 30MHz WINTransceiver TO-220 BCE 2SC1728 8W 80MHz WINTransceiver TO-202 EBC 2SC1729 14W 10dB 13.5V 175MHz FM T-31E 2SC1909 10W 14.5dB 13.5V 50MHz FM/AM/SSB TO-220 BCE 2SC1944 13W 11.1dB 12V 30MHz WINTransceiver TO-220 BCE 2SC1945 16W 14.5dB 12V 30MHz FM/AM/SSB TO-220 BEC 2SC1946 25W 6.7dB 13.5V 175MHz FM T-31E 2SC1946A 30W 10dB 13.5V 175MHz FM T-31E 2SC1947 3W 10dB 13.5V 175MHz FM TO-39 CBE 2SC1957 1.8W 17dB 12V 30MHz WINTransceiver TO-126 ECB 2SC1966 3W 7.8dB 13.5V 470MHz FM T-31E 2SC1967 7W 6.7dB 13.5V 470MHz FM T-31E 2SC1968 14W 3.7dB 13.5V 470MHz FM T-31E 2SC1968A 14W 5.4dB 13.5V 470MHz FM T-31E 2SC1969 18W 12dB 12V 30MHz FM/AM/SSB TO-220 BCE 2SC1970 1.5W 10dB 13.5V 175MHz WINTransceiver TO-220 BEC 2SC1971 7W 10dB 13.5V 175MHz WINTransceiver TO-220 BEC 2SC1972 14W 10dB 13.5V 175MHz WINTransceiver TO-220 BEC 2SC1973 1W 50MHz WINTransceiver TO-92L BCE 2SC1974 13W 10dB 13.5V 30MHz WINTransceiver TO-220 BCE 2SC1975 4W 10dB 13.5V 30MHz WINTransceiver TO-220 BCE
贴片三极管封装 1A SOT323 BC846AW NPN 1A SOT416 BC846AT N BC546A 1A SOT89 PXT3904 NPN 1A SOT89 SXT3904 NPN -1A SOT323 PMST3904 N 2N3904 1A- SOT323 BC846AW N BC546A 1AM SOT23 MMBT3904L N 2N3904 1Ap SOT23 BC846A N BC546A 1At SOT23 BC846A N BC546A 1At SOT323 BC846AW N BC546A 1B SOT23 BC846B NPN 1B SOT23 BC846B N BC546B 1B SOT23 FMMT2222 NPN 1B SOT23 FMMT2222 N 2N2222 1B SOT23 IRLML2803 F n-ch mosfet 30V 0.9A 1B SOT23 MMBT2222 NPN 1B SOT23 MMBT2222 N 2N2222 1B SOT23 PMBT2222 NPN 1B SOT23 SMBT2222 NPN 1B SOT23 YTS2222 NPN 1B SOT323 BC846BW NPN 1B SOT416 BC846BT N BC546B 1B SOT89 PXT2222 NPN -1B SOT323 PMST2222 N 2N2222 1B- SOT323 >BC846BW N BC546B
1Bs SC74 BC817UPN N 1Bt SOT23 BC846B N BC546B 1Bt SOT323 BC846BW N BC546B 1C SOT23 FMMT-A20 NPN 1C SOT23 FMMT-A20 N MPSA20 1C SOT23 IRLML6302 F p-ch mosfet 20V 0.6A 1C SOT23 MMBTA20 NPN 1C SOT23 MMBTA20L N MPS3904 1C SOT23 SMBTA20 NPN 1Cp SOT23 BAP50-05 B dual cc GP RF pin diode 1Cs SOT363 BC847S BC457 1D SOT23 BC846 NPN 1D SOT23 IRLML5103 F p-ch mosfet 30V 0.6A 1D SOT23 MMBTA42 NPN 1D SOT23 MMBTA42 N MPSA42 300V npn 1D SOT23 SMBTA42 NPN 1D SOT323 BC846W NPN 1D SOT89 SXTA42 NPN 1D- SOT323 BC846W N BC456 1DN 2SC4083 N npn 11V 3.2GHz TV tuners 1Dp SOT23 BC846 N BC456 1DR SC59 MSD1328-RT1 NPN 1DR SOT346 MSD1328R N npn gp 25V 500mA 1Ds SC74 BC846U N BC456 1Ds SOT363 BC846U BC456 1Dt SOT23 BC846 N BC456 1Dt SOT323 BC846W N BC456 1E FMMT-A43 N MPSA43 1E SOT23 BC847A NPN 1E SOT23 BC847A N BC547A 1E SOT23 FMMT-A43 NPN 1E SOT23 MMBTA43 NPN 1E SOT23 MMBTA43 N MPSA43 200V npn 1E SOT23 SMBTA43 NPN 1E SOT323 BC847AW NPN 1E SOT416 BC847AT N BC547A 1E SOT89 SXTA43 NPN 1E- SOT323 BC847A N BC547A 1EN 2SC4084 N npn 20V 2.0GHz TV tuners 1Ep SOT23 BC847A N BC547A 1ER SOT23R BC847AR R BC547A 1Es SOT23 BC847A N BC457 1Es SOT323 BC847AW N BC457
www.mccsemi .com PACKAGE OUTLINES Note: Drawings Are Not To Scale C DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A ----- .166 ----- 4.20 B ----- .079 ----- 2.00 ? C ----- .020 ----- 0.52 ? D 1.000 --- 25.40 --- DO-35 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .166 .205 4.10 5.20 B .080 .107 2.00 2.70 ? C .028 .034 .70 .90 ? D 1.000 --- 25.40 --- DO-41 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .166 .205 4.10 5.20 B .080 .107 2.00 2.70 ? C .021 .025 .53 .64 ? D 1.000 --- 25.40 --- A-405 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .230 .300 5.80 7.60 B .104 .140 2.60 3.60 ? C .026 .034 .70 .90 ? D 1.000 --- 25.40 --- DO-15 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A ----- .300 ----- 7.62 B ----- .107 ----- 2.72 ? C .018 .022 0.46 0.56 ? D 1.000 --- 25.40 --- DO-7 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A ----- .370 ----- 9.50 B ----- .250 ----- 6.40 ? C .048 .052 1.20 1.30 ? D 1.000 --- 25.40 --- DO-201AD
贴片三极管封装上的印字，与真实名称的对照表 印字器件名厂家类型封装器件用途及参数 T2 HSMS-286C HP D SOT323 dual series HSMS-286B T2 HSMS-2862 HP D SOT23 dual series HSMS-286B t23 PDTA114TU Phi N SOT323 pnp dtr R1 10k t24 PDTC114TU Phi N SOT323 npn dtr R1 10k t2A PMBT3906 Phi N SOT23 2N3906 t2A PMST3906 Phi N SOT323 2N3906 t2B PMBT2907 Phi N SOT23 2N2907 t2D PMBTA92 Phi N SOT23 MPSA92 pnp Vce 300V t2D PMSTA92 Phi N SOT323 MPSA92 pnp Vce 300V t2E PMBTA93 Phi N SOT23 MPSA93 pnp Vce 200V t2E PMSTA93 Phi N SOT323 MPSA93 pnp Vce 200V t2F PMBT2907A Phi N SOT23 2N2907A t2F PMBT2907A Phi N SOT323 2N2907A t2G PMBTA56 Phi N SOT23 MPSA56 t2G PMSTA56 Phi N SOT323 MPSA56 t2H PMBTA55 Phi N SOT23 MPSA55 t2H PMSTA55 Phi N SOT323 MPSA55 t2L PMBT5401 Phi N SOT23 2N5401 pnp 150V t2L PMST5401 Phi N SOT323 2N5401 pnp 150V T2p BCX18 Phi N SOT23 BC328 t2T PMBT4403 Phi N SOT23 2N4403 t2T PMST4403 Phi N SOT323 2N4403 T2t BCX18 Phi N SOT23 BC328 t2U PMBTA63 Phi N SOT23 MPSA63 darlington t2V PMBTA* Phi H SOT23 MPSA* darlington t2X PMBT4401 Phi N SOT23 2N4401 t2X PMST4401 Phi N SOT323 2N4401 T3 BSS63 Phi N SOT23 BSS68 T3 HSMS-286E HP A SOT323 ca dual HSMS-286B T3 HSMS-2863 HP A SOT23 ca dual HSMS-286B t31 PDTA143XT Phi N SOT23 pnp dtr4k7+10k t32 PDTC143XT Phi N SOT23 pnp dtr 4k7+10ks T32 2SC4182 Nec N SOT23 npn RF fT 1.1GHz @3V hfe 60-105 T33 2SC4182 Nec N SOT23 npn RF fT 1.1GHz @3V hfe 85-150 T34 2SC4182 Nec N SOT23 npn RF fT 1.1GHz @3V hfe 120-220 T4 BCX17R Phi R SOT23R BC327 T4 HSMS-286F HP B SOT323 cc dual HSMS-286B T4 HSMS-28* HP B SOT23 cc dual HSMS-286B T4 MBD330DW Mot DL SOT363 dual UHF schottky diode T42 2SC3545P Nec N - npn RF fT 2GHz hfe 50-100
A,Nov,2010 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC2881 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Transition Frequency z High Voltage z Complementary to 2SA1201 APPLICATIONS z Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =1mA,I E = 0 120 V Collector-emitter breakdown voltage V (BR)CEO I C =10mA,I B =0 120 V Emitter-base breakdown voltage V (BR)EBO I E =1mA,I C =0 5 V Collector cut-off current I CBO V CB =120V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =5V,I C =0 0.1 μA DC current gain h FE V CE =5V, I C =100mA 80 240 Collector-emitter saturation voltage V CE(sat) I C =500mA,I B =50mA 1 V Base-emitter voltage V BE V CE =5V, I C =0.5A 1 V Transition frequency f T V CE =5V,I C =100mA 120 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 30 pF CLASSIFICATION OF h FE RANK O Y RANGE 80–160 120–240 MARKING CO1 CY1 Symbol Parameter Value Unit V CBO Collector-Base Voltage 120 V V CEO Collector-Emitter Voltage 120 V V EBO Emitter-Base Voltage 5 V I C Collector Current 800 mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ https://www.doczj.com/doc/465394675.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】
三极管封装尺寸 封装图及尺寸: ?DIMENSION: 2.9*1.3*0.97?PIN: 3 ?JEDEC: SOT-23 ?EIAJ: SC-59 ?MOQ: 3000 ?PACKING: REEL PACKING
封装图及尺寸: ?DIMENSION: 2.0*1.25*0.9?PIN: 3 ?JEDEC: SOT-323 ?EIAJ: SC-70 ?MOQ: 3000 ?PACKING: REEL PACKING 封装图及尺寸:
?DIMENSION: 1.6*0.8*0.8?PIN: 3 ?JEDEC: SOT-523 ?EIAJ: SC-75 ?MOQ: 3000 ?PACKING: REEL PACKING 封装图及尺寸:
?DIMENSION: 2.0*1.25*0.9?PIN: 4 ?JEDEC: SOT-143 ?EIAJ: - ?MOQ: 3000 ?PACKING: REEL PACKING 封装图及尺寸: ?DIMENSION: 4.5*2.5*1.5
?PIN: 3 ?JEDEC: SOT-89 ?EIAJ: SC-62 ?MOQ: 3000 ?PACKING: REEL PACKING 封装图及尺寸: ?DIMENSION: 2.9*1.3*0.97?PIN: 3 ?JEDEC: SOT-23 ?EIAJ: SC-59 ?MOQ: 3000
?PACKING: REEL PACKING 封装图及尺寸: ?DIMENSION: 2.0*1.25*0.9?PIN: 4 ?JEDEC: SOT-343 ?EIAJ: SC-61 ?MOQ: 3000 ?PACKING: REEL PACKING
了解 直插、贴片二三极管封装形式图片以及尺寸大全 来源：霍芯电子时间：2011-12-13 贴片二极管封装形式图片 贴片三极管封装形式图片 直插二极管封装形式图片 直插三极管封装形式图片 以及尺寸大全： SOD-723 SOT-23 SOT-89 TO-220 SOT-143 SOT23-6 TO-92 TO-263 等等 外形图封装形式外形尺寸mm SOD-723 1.00*0.60*0.53 SOD-523 1.20*0.80*0.60
SOD-323 1.70*1.30*0.85 SOD-123 2.70*1.60*1.10 SOT-143 SOT-523 1.60*0.80*0.75 SOT-363/SOT26 2.10*1.25*0.96 SOT-353/SOT25 2.10*1.25*0.96 SOT343 2.10*1.25*0.96 SOT-323 2.10*1.25*0.96 SOT-23 2.90*1.30*1.00 SOT23-3L 2.92*1.60*1.10
SOT23-5L 2.92*1.60*1.10 SOT23-6L 2.92*1.60*1.10 SOT-89 4.50*2.45*1.50 `SOT-89-3L 4.50*2.45*1.50 `SOT-89-5L 4.50*2.45*1.50 `SOT-89-6L 4.50*2.45*1.50 SOT-223 6.30*3.56*1.60 TO-92 4.50*4.50*3.50 TO-92S-2L 4.00*3.16*1.52 TO-92S-3L 4.00*3.16*1.52
三极管常用电路 1.三极管偏置电路_固定偏置电路 如上图为三极管常用电路中的固定偏置电路:Rb的作用是用来控制晶体管的基极电路Ib,Ib称为偏流,Rb称为偏流电阻或偏置电阻.改变Rb的值,就可以改变Ib的大小.图中Rb 固定,称为固定偏置电阻. 这种电路简单,使用元件少,但是由于晶体管的热稳定性差,尽管偏置电阻Rb固定,当温度升高时,晶体管的Iceo急剧增加,使Ie也增加,导致晶体管工作点发生变化.所以只有在温度变化不大,温度稳定性不高的场合才用固定偏置电路 2.三极管偏置电路_电压负反馈偏置电路 如上图为三极管常用电路中的电压负反馈偏置电路:晶体管的基极偏置电阻接于集电极. 这个电路好象与固定偏置电路在形式上没有多大差别,然而正是这一点,恰恰起到了自动补偿工作点漂移的效果.从图中可见,当温度升高时,Ic增大,那么Ic上的压降也要增大,使得Uce下降,通过Rb,必然Ib也随之减小,Ib的减小导致Ic的减小,从而稳定了Ic,保证了
Uce基本不变. 这个过程,称为负反馈过程,这个电路就是电压负反馈偏置电路. 2.三极管偏置电路_分压式电流负反馈偏置电路 如上图为三极管常用电路中的分压式电流负反馈偏置电路:这个电路通过发射极回路串入电阻Re和基极回路由电阻R1,R2的分压关系固定基极电位以稳定工作点,称为分压式电流负反馈偏置电路.下面分析工作点稳定过程. 当温度升高,Iceo增大使Ic增加.Ie也随之增加.这时发射极电阻Re上的压降Ue=Ie*Re 也随之升高.由于基极电位Ub是固定的,晶体管发射结Ube=Ub-Ue,所以Ube必然减小,从而使Ib减小,Ic和Ie也就减小了. 这个过程与电压负反馈类似,都能起到稳定工作点的目的.但是,这个电路的反馈是Ue=Ie*Re,取决于输出电流,与输出电压无关,所以称电流负反馈. 在这个电路中,上,下基极偏置电阻R1,R2的阻值适当小些,使基极电位Ub主要由它们的分压值决定.发射极上的反馈电阻Re越大,负反馈越深,稳定性越好.不过Re太大,在电源电压不变的情况下,会使Uce下降,影响放大,所以Re要选得适当. 如果输入交流信号,也会在Re上引起压降,降低了放大器的放大倍数,为了避免这一点,Re 两端并联了一个电容Ce,起交流旁路作用. 这种电路稳定性好,所以应用很广泛. 一、采用仪表放大器还是差分放大器 尽管仪表放大器和差分放大器有很多共性，但设计过程的第一步应当是选择使用何种类型的放大器。
A,Aug,2012 EMITTER JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors BC817W TRANSISTOR (NPN) FEATURES ● For General AF Applications ● High Collector Current ● High Current Gain ● Low Collector-Emitter Saturation Voltage MARKING: BC817-16W: 6A BC817-25W: 6B BC817-40W: 6C MAXMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 50 V V CEO Collector-Emitter Voltage 45 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 0.5 A P C Collector Dissipation 0.2 W R θJA Thermal Resistance from Junction to Ambient 625 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS(T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =10μA,I E =0 50 V Collector-emitter breakdown voltage V (BR)CEO I C =10mA,I B = 0 45 V Emitter-base breakdown voltage V (BR)EBO I E =1μA,I C =0 5 V Collector cut-off current I CBO V CB =20V,I E = 0 0.1 μA Emitter cut-off current I EBO V EB =5V,I C =0 0.1 μA h FE(1) V CE =1V,I C = 100mA 100 600 DC current gain h FE(2) V CE =1V,I C = 500mA 40 Collector-emitter saturation voltage V CE(sat)I C =500mA,I B 50mA 0.7 V Base-emitter saturation voltage V BE(sat) I C =500mA,I B =50mA 1.2 V Base-emitter voltage V BE(ON)V CE =1V,I C = 500mA 1.2 V Transition frequency f T V CE =5V,I C =10mA,f = 100MHz 100 MHz Collector output capacitance C ob V CB =10V,f =1MHz 5 pF CLASSIFICATION of h FE (1) Rank BC817-16W BC817-25W BC817-40W Range 100-250 160-400 250-600 https://www.doczj.com/doc/465394675.html, 【南京南山半导体有限公司 — 长电三极管选型资料】