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IHW30N120R3

Reverse Conducting IGBT with monolithic body diode

Features: ? Powerful monolithic Body Diode with very low forward voltage

? Body diode clamps negative voltages

? TrenchStop and Fieldstop technology for 1200 V applications

offers :

- very tight parameter distribution - high ruggedness, temperature stable behavior

? NPT technology offers easy parallel switching capability due to

positive temperature coefficient in V CE(sat) ? Low EMI

? Qualified according to JEDEC 1 for target applications ? Pb-free lead plating; RoHS compliant

? Complete product spectrum and PSpice Models : https://www.doczj.com/doc/369789097.html,/igbt/

Applications: ? Inductive Cooking ? Soft Switching Applications Type

V CE

I C

V CE(sat ),Tj=25°C

T j,max Marking Package

IHW30N120R2 1200V 30A 1.65V 175°C H30R1202 PG-TO-247-3

Maximum Ratings

Parameter Symbol Value Unit Collector-emitter voltage V C E 1200 V DC collector current T C = 25°C T C = 100°C

I C

60 30 Pulsed collector current, t p limited by T jmax

I C p u l s 90 Turn off safe operating area (V CE ≤ 1200V, T j ≤ 175°C) - 90 Diode forward current T C = 25°C T C = 100°C

I F

60 30

Diode pulsed current, t p limited by T jmax

I F p u l s 90

Diode surge non repetitive current, t p limited by T jmax T C = 25°C, t p = 10ms, sine halfwave T C = 25°C, t p ≤ 2.5μs, sine halfwave T C = 100°C, t p ≤ 2.5μs, sine halfwave I F S M

50 130 120 A

Gate-emitter voltage

Transient Gate-emitter voltage (t p < 5 ms) V G E

±20 ±25

V Power dissipation T C = 25°C P t o t 390 W Operating junction temperature T j -40...+175 Storage temperature

T s t g -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s

260

°C

J-STD-020 and JESD-022

PG-TO-247-3

Thermal Resistance

Parameter Symbol

Conditions

Max.

Value Unit Characteristic

IGBT thermal resistance,

junction – case

R t h J C0.38

Diode thermal resistance,

junction – case

R t h J C D0.37

Thermal resistance, junction – ambient R t h J A40

K/W

Electrical Characteristic, at T j = 25 °C, unless otherwise specified

Value

Parameter Symbol

Conditions

min. Typ. max.

Unit Static Characteristic

Collector-emitter breakdown voltage V(B R)C E S V G E=0V, I C=1mA1200 - - Collector-emitter saturation voltage V C E(s a t)V G E = 15V, I C=30A

T j=25°C T j=125°C T j=175°C -

1.65

1.85

2.0

1.8

Diode forward voltage V F V G E=0V, I F=30A

T j=25°C T j=125°C T j=175°C -

1.55

1.7

1.75

1.8

Gate-emitter threshold voltage V G E(t h)I C=0.7mA,

V C E=V G E 5.1 5.8 6.4

Zero gate voltage collector current I C E S V C E=1200V,

V G E=0V

T j=25°C T j=175°C -

2500

μA

Gate-emitter leakage current I G E S V C E=0V,V G E=20V- - 100

nA Transconductance g f s V C E=20V, I C=30A- 19.7 - S Integrated gate resistor R G i n t none ?

Dynamic Characteristic Input capacitance C i s s - 2589 - Output capacitance

C o s s

- 77 - Reverse transfer capacitance C r s s V C E =25V, V G E =0V, f =1MHz - 62 - pF Gate charge

Q G a t e

V C C =960V, I C =30A V G E =15V

- 198 - nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

L E

- 13 - nH

Switching Characteristic, Inductive Load, at T j =25 °C

Value

Parameter Symbol Conditions min. typ. Max. Unit

IGBT Characteristic Turn-off delay time t d (o f f ) - 792 - Fall time t f - 33 -

Turn-on energy E o n - - - Turn-off energy E o f f - 2.4 - ns Total switching energy E t s T j =25°C,

V C C =600V,I C =30A V G E =0 /15V,

R G =28Ω,

L σ2)

=180nH,

C σ2)

=39pF

- 2.4 - mJ

Switching Characteristic, Inductive Load, at T j =175 °C

Value

Parameter Symbol Conditions min. Typ. Max. Unit

IGBT Characteristic Turn-off delay time t d (o f f ) - 860 - Fall time t f - 40 -

Turn-on energy E o n - - - Turn-off energy E o f f - 3.1 - ns Total switching energy

E t s

T j =175°C

V C C =600V,I C =30A,V G E = 0 /15V,

R G = 28Ω,

L σ=180nH 2),

C σ=39pF 2)

- 3.1 - mJ

Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.

I C , C O L L E C T O R C U R R E N T

10Hz

100Hz 1kHz 10kHz 100kHz

20A

40A

60A

80A

I C , C O L L E C T O R C U R R E N T

1V 10V 100V 1000V

10A

f , SWITCHING FREQUENCY

V CE , COLLECTOR -EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency for hard switching (turn-off)

(T j ≤ 175°C, D = 0.5, V CE = 600V, V GE = 0/+15V, R G = 28Ω) Figure 2. IGBT Safe operating area

(D = 0, T C = 25°C, T j ≤175°C;V GE =15V)

P t o t , D I S S I P A T E D P O W E R

25°C

50°C

75°C

100°C

125°C

150°C

0W 50W 100W 150W 200W 250W 300W 350W I C , C O L L E C T O R C U R R E N T

25°C

50°C 75°C 100°C 125°C 150°C

10A

20A

30A

40A

50A

T C , CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature (T j ≤ 175°C)

Figure 4. DC Collector current as a function

of case temperature (V GE ≥ 15V, T j ≤ 175°C)

I C , C O L L E C T O R C U R R E N T

0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

10A

20A 30A 40A 50A 60A 70A

80A I C , C O L L E C T O R C U R R E N T

0V 1V 2V 3V

10A 20A 30A

40A 50A 60A

70A

80A

V CE , COLLECTOR -EMITTER VOLTAGE

Figure 5. Typical output characteristic

(T j = 25°C) Figure 6. Typical output characteristic

(T j = 175°C)

I C , C O L L E C T O R C U R R

E N T

10V

10A 20A 30A 40A 50A 60A 70A 80A

V C E (s a t ), C O L L E C T O R -E M I T T S A T U R A T I O N V O L T A G E

0°C

50°C

100°C

150°C

0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

V GE , GATE-EMITTER VOLTAGE

T J , JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic

(V CE =20V)

Figure 8. Typical collector-emitter saturation

voltage as a function of junction temperature (V GE =15V)

t , S W I T

C H I N G T I M E S

20A 30A 40A 50A

100ns

1000ns

t , S W I T C H I

N G T I M E S

10Ω20Ω30Ω40Ω

50Ω60Ω70Ω

100ns

1000ns

I C , COLLECTOR CURRENT

R G , GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current (inductive load, T J =175°C,

V CE =600V, V GE =0/15V, R G =28?, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T J =175°C, V CE =600V, V GE =0/15V, I C =30A,

Dynamic test circuit in Figure E)

t , S W I T C

H I N G T I M E S

25°C 50°C 75°C 100°C 125°C 150°C

100ns

1000ns

V G E (t h ), G A T E -E M I T T T R S H O L D V O L T A G E

-50°C

0°C 50°C 100°C

T J , JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature (inductive load, V CE =600V, V GE =0/15V, I C =30A, R G =28?, Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage as a

function of junction temperature (I C = 0.7mA)

E , S W I T C H I N G E N E R G

Y L O S S E S

10A

20A

30A

40A

50A

0.0mJ

1.0mJ

2.0mJ

3.0mJ

4.0mJ

5.0mJ

6.0mJ

E , S W I T C H I N G E N E

R G Y L O S S E S

20Ω

30Ω

40Ω

50Ω60Ω70Ω

0.0mJ

1.0mJ

2.0mJ

3.0mJ

4.0mJ

I C , COLLECTOR CURRENT

R G , GATE RESISTOR

Figure 13. Typical turn-off energy as a

function of collector current (inductive load, T J =175°C,

V CE =600V, V GE =0/15V, R G =28?, Dynamic test circuit in Figure E) Figure 14. Typical turn-off energy as a

function of gate resistor

(inductive load, T J =175°C, V CE =600V, V GE =0/15V, I C =30A,

Dynamic test circuit in Figure E)

E , S W I T C H I N G E N E R G Y

L O S S E S

25°C

50°C 75°C 100°C 125°C 150°C

0.0mJ

0.5mJ 1.0mJ 1.5mJ 2.0mJ 2.5mJ

3.0mJ E , S W I T C H I N G E N E R G Y

L O S S E S

400V

500V 600V 700V 800V 900V

0mJ mJ

2mJ

3mJ

4mJ

T J , JUNCTION TEMPERATURE

V CE , COLLECTOR -EMITTER VOLTAGE

Figure 15. Typical turn-off energy as a

function of junction temperature (inductive load, V CE =600V, V GE =0/15V, I C =30A, R G =28?, Dynamic test circuit in Figure E)

Figure 16. Typical turn-off energy as a

function of collector emitter voltage

(inductive load, T J =175°C, V GE =0/15V, I C =30A, R G =28?, Dynamic test circuit in Figure E)

V G E , G A T E -E M I T T

E R V O L T A G E

0nC 50nC 100nC 150nC 200nC 250nC

10V

c , C A P A C I

T A N C E

0V 10V 20V

100pF

1nF

Q GE , GATE CHARGE

V CE , COLLECTOR -EMITTER VOLTAGE

Figure 17. Typical gate charge

(I C =30 A) Figure 18. Typical capacitance as a function

of collector-emitter voltage (V GE =0V, f = 1 MHz)

Z t h J C , T R A N S I E N T T H E R M A L R E S I S T A N C E

10μs 100μs 1ms 10ms 100ms 10-3

K/W

10-2

K/W

10-1

K/W

Z t h J C , T R A N S I E N T T H E R M A L R E S I S T A N C E

10μs

100μs

1ms 10ms 100ms

10-2

K/W

10-1

K/W

t P , PULSE WIDTH

Figure 19. IGBT transient thermal resistance (D = t p / T )

Figure 20. Diode transient thermal

impedance as a function of pulse width (D =t P /T )

I F , F O R W A R D C U R R E N T

0.0V

0.5V

1.0V

1.5V

2.0V

0A 10A

20A

30A

40A

50A

V F , F O R W A R D V O L T A G E

0°C

50°C

100°C

150°C

0.0V

0.5V

1.0V

1.5V

2.0V

V F , FORWARD VOLTAGE

T J , JUNCTION TEMPERATURE

Figure 21. Typical diode forward current as a function of forward voltage

Figure 22. Typical diode forward voltage as a function of junction temperature

PG-TO247-3

Leakage inductance Lσ and Stray capacity Cσ

Edition 2006-01

Published by

Infineon Technologies AG

81726 München, Germany

? Infineon Technologies AG 12/2/09.

Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (https://www.doczj.com/doc/369789097.html,).

Warnings

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