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MBE生长的InP DHBT的性能

第 27卷   第 5期 2006年 5月

半   导   体   学   报

C HIN ES E J OU RNAL O F S EM ICOND U C TO RS

Vol. 27  No. 5

May ,2006

MBE生长的InP DHBT的性能

Corresp onding aut hor. Email :sushubing@163. com   Received 26Nove mber 2005

Ζ2006Chinese Institute of Elect ronics

Perform ance of an InP D HBT G row n by MBE

Su Shubing 1, , Liu Xinyu 1, Xu Anhuai 2, Yu Jinyong 1, Qi Ming 2,

Liu Xunchun 1, and Wang Runmei 1

(1I nstit ute of Microelect ronics , Chinese A cadem y of Sciences , Bei j ing   100029, China )

(2S hanghai I nstit ute of Microsystem and I nf ormation Technolog y , Chinese A cadem y of Sciences , S hanghai   200050, China )

Abstract :We rep ort t he perf or ma nce of t he first self 2aligned In P/In GaAs double heterojunction bip olar t ra nsist or

(D HB T ) p roduced in China. The device has a 2μm ×12

μm U 2shaped emitter area a nd demonst rates a peak com 2mon 2emitter D C curre nt gain of over 300, an offset voltage of 0116V , a knee voltage of 016V , and a n op en 2base breakdow n voltage of about 6V. The HB T exhibits good microwave perf or ma nce wit h a curre nt gain cut off f re 2quency of 80G Hz and a maximum oscillation f reque ncy of 40G Hz. These results indicate t hat t his In P/In GaAs D HB T is suitable f or low 2voltage ,low 2p ower , a nd high 2f requency applications.

K ey w ords :MB E ; Be 2doped In GaAs base ; InP ; double heterojunction bip olar t ra nsist or EEACC :2560J

C LC number :TN 322+. 8    Document code :A     Article ID :025324177(2006) 0520792204

1  Introduction

Aggressively scaled InP/In GaAs 2based single heterojunction bipolar t ransistors (SHB Ts ) have demonstrated good microwave characteristics , but t heir high cutoff frequencies are achieved at t he ex 2pense of breakdown voltage because of t he narrow gap of t he In GaAs collector [1~4]. Wide 2bandgap Al 0. 48In 0. 52As or InP collector layers in double het 2erojunction bipolar t ransistors (D HB Ts ) can im 2prove t he breakdown voltage ,while it is difficult to design t he collector st ruct ure because of current blocking t hat result s from t he po sitive conduction band discontinuity between t he In 0. 53Ga 0. 47As and Al 0. 48In 0. 52As or InP. For an InP collector ,a bloc 2king barrier of about 0125eV must be overcome be 2tween t he base and t he collector. Current blocking raises t he sat uration voltage and increases carrier storage and recombination in t he base layer ,so va 2rious doping and/or compo sitional grading schemes have been implemented to alleviate blocking effect s at t he B/C heterojunction (Fig. 1) [5~13].

In t his paper ,we develop a novel struct ure for an InP/In GaAs D HB T wit h a 3nm 2t hick InP layer doped wit h silicon to a concent ration of 3×1019cm -3to minimize t he current blocking effect at t he base 2collector interface. We have successf ully fabri

2

Fig. 1  Conduction band diagrams for common approa 2ches to overcoming the collector current blocking at the B/C heterojunction of D HB Ts

cated a 2

μm ×12μm self 2aligned InP/In GaAs D H 2B T and demonst rated it
s good device performance.

μm ×12μm self 2aligned InP/In GaAs D H 2B T and demonst rated it s good device performance.

2  Device structure and fabrication

   The epitaxial layer materials of o ur lattice 2matched InP/In GaAs D HB T are grown on a 50mm semi 2insulating InP (100) subst rate by a V90gas 2source molecular beam epitaxy (GSMB E ) system at t he Shanghai Instit ute of Micro system and In 2formation Technology ,and t he devices are fabrica 2

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