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MBE生长的InP DHBT的性能

第27卷 第5期2006年5月

半 导 体 学 报

C HIN ES E J OU RNAL O F S EM ICON

D U C TO RS

Vol.27 No.5

May ,2006

MBE生长的InP DHBT的性能

Corresp onding aut hor.Email :sushubing @http://www.doczj.com/doc/225c77340b4c2e3f57276343.html  Received 26Nove mber 2005

Ζ2006Chinese Institute of Elect ronics

Perform ance of an InP D HBT G row n by MBE

Su Shubing 1, ,Liu Xinyu 1,Xu Anhuai 2,Yu Jinyong 1,Qi Ming 2,

Liu Xunchun 1,and Wang Runmei 1

(1I nstit ute of Microelect ronics ,Chinese A cadem y of Sciences ,Bei j ing  100029,China )

(2S hanghai I nstit ute of Microsystem and I nf ormation Technolog y ,Chinese A cadem y of Sciences ,S hanghai  200050,China )

Abstract :We rep ort t he perf or ma nce of t he first self 2aligned In P/In GaAs double heterojunction bip olar t ra nsist or

(D HB T )p roduced in China.The device has a 2μm ×12

μm U 2shaped emitter area a nd demonst rates a peak com 2mon 2emitter D C curre nt gain of over 300,an offset voltage of 0116V ,a knee voltage of 016V ,and a n op en 2base breakdow n voltage of about 6V.The HB T exhibits good microwave perf or ma nce wit h a curre nt gain cut off f re 2quency of 80G Hz and a maximum oscillation f reque ncy of 40G Hz.These results indicate t hat t his In P/In GaAs D HB T is suitable f or low 2voltage ,low 2p ower ,a nd high 2f requency applications.

K ey w ords :MB E ;Be 2doped In GaAs base ;InP ;double heterojunction bip olar t ra nsist or EEACC :2560J

C LC number :TN 322+.8   Document code :A    Article I

D :025324177(2006)0520792204

1 Introduction

Aggressively scaled InP/In GaAs 2based single heterojunction bipolar t ransistors (SHB Ts )have demonstrated good microwave characteristics ,but t heir high cutoff frequencies are achieved at t he ex 2pense of breakdown voltage because of t he narrow gap of t he In GaAs collector [1~4].Wide 2bandgap Al 0.48In 0.52As or InP collector layers in double het 2erojunction bipolar t ransistors (D HB Ts )can im 2prove t he breakdown voltage ,while it is difficult to design t he collector st ruct ure because of current blocking t hat result s from t he po sitive conduction band discontinuity between t he In 0.53Ga 0.47As and Al 0.48In 0.52As or InP.For an InP collector ,a bloc 2king barrier of about 0125eV must be overcome be 2tween t he base and t he collector.Current blocking raises t he sat uration voltage and increases carrier storage and recombination in t he base layer ,so va 2rious doping and/or compo sitional grading schemes have been implemented to alleviate blocking effect s at t he B/C heterojunction (Fig.1)[5~13].

In t his paper ,we develop a novel struct ure for an InP/In GaAs D HB T wit h a 3nm 2t hick InP layer doped wit h silicon to a concent ration of 3×1019cm -3to minimize t he current blocking effect at t he base 2collector interface.We have successf ully fabri

2

Fig.1 Conduction band diagrams for common approa 2ches to overcoming the collector current blocking at the B/C heterojunction of D HB Ts

cated a 2

μm ×12μm self 2aligned InP/In GaAs D H 2B T and demonst rated
it s good device performance.

μm ×12μm self 2aligned InP/In GaAs D H 2B T and demonst rated it s good device performance.

2 Device structure and fabrication

  The epitaxial layer materials of o ur lattice 2matched InP/In GaAs D HB T are grown on a 50mm semi 2insulating InP (100)subst rate by a V90gas 2source molecular beam epitaxy (GSMB E )system at t he Shanghai Instit ute of Micro system and In 2formation Technology ,and t he devices are fabrica 2

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