MMG3011NT1
MMG3011NT1
0--6000MHz,15dB
15dBm InGaP HBT
Heterojunction Bipolar Transistor (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3011NT1is a general purpose amplifier that is internally input and output matched.It is designed for a broad range of Class A,small--signal,high linearity,general purpose applications.It is suitable for applications with frequencies from 0to 6000MHz such as cellular,P C S ,B WA ,W L L ,P H S ,C AT V,V H F,U H F,U M T S a n d g e n e r a l small--signal RF.
Features
?Frequency:0to 6000MHz ?P1dB:15dBm @900MHz
?Small--Signal Gain:15dB @900MHz
?Third Order Output Intercept Point:28dBm @900MHz ?Single 5Volt Supply
?Internally Matched to 50Ohms
?Cost--effective SOT--89Surface Mount Package
?In Tape and Reel.T1Suffix =1000Units,12mm Tape Width,7inch Reel.
Table 1.Typical Performance (1)
Characteristic Symbol 900MHz 2140MHz 3500MHz Unit Small--Signal Gain (S21)
G p 151412dB Input Return Loss (S11)
IRL --18--25--25dB Output Return Loss (S22)
ORL --25--18--17dB Power Output @1dB Compression P1dB 1513.513.5dBm Third Order Output Intercept Point
OIP3
28
26.5
26
dBm
1.V CC =5Vdc,T A =25°C,50ohm system.
Table 2.Maximum Ratings
Rating
Symbol Value Unit Supply Voltage V CC 6V Supply Current I CC 80mA RF Input Power
P in 10dBm Storage Temperature Range T stg --65to +150
°C Junction Temperature (2)
T J
150
°C
2.For reliable operation,the junction temperature should not exceed 150°C.
Table 3.Thermal Characteristics
Characteristic
Symbol Value (3)
Unit Thermal Resistance,Junction to Case
Case Temperature 87°C,5Vdc,41mA,no RF applied
R θJC
83
°C/W
3.Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers.Go to https://www.doczj.com/doc/1b16024327.html,/rf.Select Documentation/Application Notes --AN1955.
Document Number:MMG3011NT1
Rev.6,2/2012
Freescale Semiconductor Technical Data
2
RF Device Data
Freescale Semiconductor,Inc.
MMG3011NT1Table 4.Electrical Characteristics (V CC =5Vdc,900MHz,T A =25°C,50ohm system,in Freescale Application Circuit)
Characteristic
Symbol Min Typ Max Unit Small--Signal Gain (S21)G p 13.515—dB Input Return Loss (S11)IRL —--18—dB Output Return Loss (S22)
ORL —--25—dB Power Output @1dB Compression P1dB —15—dBm Third Order Output Intercept Point OIP3—28—dBm Noise Figure NF — 4.6—dB Supply Current (1)I CC 324148mA Supply Voltage (1)
V CC
—
5
—
V
1.For reliable operation,the junction temperature should not exceed 150°C.
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MMG3011NT1
3
RF Device Data
Freescale Semiconductor,Inc.
Table 5.Functional Pin Description
Pin Number
Pin Function
1RF in 2Ground
3
RF out /DC Supply
Table 6.ESD Protection Characteristics
Test Methodology
Class Human Body Model (per JESD 22--A114)1A Machine Model (per EIA/JESD 22--A115)A Charge Device Model (per JESD 22--C101)
IV
Table 7.Moisture Sensitivity Level
Test Methodology
Rating Package Peak Temperature
Unit Per JESD 22--A113,IPC/JEDEC J--STD--020
1
260
°C
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4
RF Device Data Freescale Semiconductor,Inc.
MMG3011NT150OHM TYPICAL
CHARACTERISTICS
5
20
f,
FREQUENCY(GHz)
Figure2.Small--Signal
Gain(S21)versus
Frequency
15
10
1234
G
p
,
S
M
A
L
L
--
S
I
G
N
A
L
G
A
I
N
(
d
B
)
4
--40
f,FREQUENCY(GHz)
Figure3.Input/Output Return Loss versus
Frequency
--10
--20
--30
123
S
1
1
,
S
2
2
(
d
B
)
15
10
17
5
P out,OUTPUT POWER(dBm)
Figure4.Small--Signal Gain versus Output
Power
16
15
14
13
12
7
11
3.5
3
2.5
2
1.5
1
0.5
10
17
16
15
13
11
f,FREQUENCY(GHz)
Figure5.P1dB versus Frequency
P
1
d
B
,
1
d
B
C
O
M
P
R
E
S
S
I
O
N
P
O
I
N
T
(
d
B
m
)
14
12
5.4
80
4
V CC,COLLECTOR VOLTAGE(V)
Figure6.Collector Current versus Collector
Voltage
60
40
10
4.25
5.2
I
C
C
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
m
A
)
20
4.4 4.6 4.84
15
30
f,FREQUENCY(GHz)
Figure7.Third Order Output Intercept Point
versus Frequency
27
24
21
18
123
O
I
P
3
,
T
H
I
R
D
O
R
D
E
R
O
U
T
P
U
T
I
N
T
E
R
C
E
P
T
P
O
I
N
T
(
d
B
m
)
11
G
p
,
S
M
A
L
L
--
S
I
G
N
A
L
G
A
I
N
(
d
B
)
50
30
913
70
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MMG3011NT1
5
RF Device Data
Freescale Semiconductor,Inc.
50OHM TYPICAL
CHARACTERISTICS
18334.9
V CC ,COLLECTOR VOLTAGE (V)
Figure 8.Third Order Output Intercept Point
versus Collector Voltage
30272421O I P 3,T H I R D O R D E R O U T P U T I N T E R C E P T P O I N T (d B m )
4.95
5
5.1
5.05
100
--40
--20
20
40
60
80
2431T,TEMPERATURE (_C)
Figure 9.Third Order Output Intercept Point
versus Case Temperature
29282726O I P 3,T H I R D O R D E R O U T P U T I N T E R C E P T P O I N T (d B m )
25Figure 10.Third Order Intermodulation Distortion
versus Output Power
P out ,OUTPUT POWER (dBm)
I M D ,T H I R D O R D E R I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )
--6
--3
3
6
--80--30--50--60--70--40150
103
105
120
Figure 11.MTTF versus Junction Temperature
104
125
130
135
140
145
T J ,JUNCTION TEMPERATURE (°C)
NOTE:The MTTF is calculated with V CC =5Vdc,I CC =41mA
M T T F (Y E A R S )
4
08
f,FREQUENCY (GHz)
Figure 12.Noise Figure versus Frequency
6
4
2
1
2
3
N F ,N O I S E F I G U R E (d B )
--70
--20--3
P out ,OUTPUT POWER (dBm)
Figure 13.Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
--30--40--50--609
6
A C P R ,A D J A C E N T C H A N N E L P O W E R R A T I O (d
B c )
12
30
3
12
9
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6
RF Device Data
Freescale Semiconductor,Inc.
MMG3011NT150OHM APPLICATION CIRCUIT:40--300MHz
Figure 14.50Ohm Test Circuit Schematic
V Figure 15.S21,S11and S22versus Frequency --40
200
f,FREQUENCY (MHz)
200
300
400
500
100--10--20--30Figure 16.50Ohm Test Circuit Component Layout
Z1,Z50.347″x 0.058″Microstrip Z20.575″x 0.058″Microstrip Z3
0.172″x 0.058″Microstrip
Z40.403″x 0.058″Microstrip
PCB Getek Grade ML200C,0.031″,εr =4.1
S 21,S 11,S 22(d B )
100
Table 8.50Ohm Test Circuit Component Designations and Values
Part
Description
Part Number Manufacturer C1,C2,C30.01μF Chip Capacitors C0603C103J5RAC Kemet C41000pF Chip Capacitor C0603C102J5RAC Kemet L1470nH Chip Inductor BK2125HM471--T Taiyo Yuden R1
0ΩChip Resistor
ERJ3GEY0R00V
Panasonic
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MMG3011NT1
7
RF Device Data
Freescale Semiconductor,Inc.
50OHM APPLICATION CIRCUIT:300--3600MHz
Figure 17.50Ohm Test Circuit Schematic
V Figure 18.S21,S11and S22versus Frequency --4020f,FREQUENCY (MHz)
800
100--10--20Figure 19.50Ohm Test Circuit Component Layout
Z1,Z50.347″x 0.058″Microstrip Z20.575″x 0.058″Microstrip Z3
0.172″x 0.058″Microstrip
Z40.403″x 0.058″Microstrip
PCB Getek Grade ML200C,0.031″,εr =4.1
S 21,S 11,S 22(d B )
1300
300
1800
2300
2800
3300
3800
--30Table 9.50Ohm Test Circuit Component Designations and Values
Part
Description
Part Number Manufacturer C1,C2150pF Chip Capacitors C0603C151J5RAC Kemet C30.01μF Chip Capacitor C0603C103J5RAC Kemet C41000pF Chip Capacitor C0603C102J5RAC Kemet L156nH Chip Inductor HK160856NJ--T Taiyo Yuden R1
0ΩChip Resistor
ERJ3GEY0R00V
Panasonic
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8
RF Device Data Freescale Semiconductor,Inc.
MMG3011NT150OHM TYPICAL CHARACTERISTICS
https://www.doczj.com/doc/1b16024327.html,mon Emitter S--Parameters(V CC=5Vdc,T A=25°C,50Ohm System)
f MHz
S11S21S12S22
|S11|∠φ|S21|∠φ|S12|∠φ|S22|∠φ
1000.06552170.033 5.96942176.2630.09975--0.8160.13385--2.955 1500.06383167.931 5.93739174.1550.09991--1.180.13500--4.514 2000.06269165.117 5.91539171.5270.10015--2.4770.13601--6.374 2500.06117162.063 5.89348169.5460.10045--2.8830.13724--9.6
3000.05981158.66 5.87619167.5180.10063--3.340.13832--12.707 3500.05830154.766 5.86975165.3980.10085--4.050.14046--14.848 4000.05702150.967 5.85785163.3770.10108--4.5060.14191--17.031 4500.05620147.157 5.84533161.3030.10131--5.1590.14371--19.568 5000.05480143.805 5.83028159.190.10142--5.7660.14461--21.523 5500.05404139.862 5.81371157.1920.10154--6.2530.14562--23.875 6000.05345136.215 5.79406155.1720.10159--6.830.14624--25.878 6500.05300132.595 5.77608153.1330.10166--7.4490.14664--28.005 7000.05301129.164 5.75924151.1350.10172--7.9850.14651--30.174 7500.05337125.784 5.73951149.1080.10177--8.6080.14648--32.244 8000.05401122.842 5.71885147.0930.10184--9.1780.14551--34.496 8500.05502120.061 5.69616145.0640.10204--9.7460.14435--36.557 9000.05607117.736 5.67188143.0660.10209--10.3190.14281--38.707 9500.05712115.541 5.65082141.1120.10222--10.9150.14087--40.982 10000.05849113.614 5.62851139.1090.10236--11.5060.13859--43.169 10500.06056112.274 5.60006137.1590.10243--12.1030.13641--45.576 11000.06216111.255 5.57557135.1690.10254--12.710.13320--47.809 11500.06385110.823 5.55100133.2020.10280--13.3060.12952--50.265 12000.06581110.396 5.52258131.2310.10297--13.8920.12567--52.695 12500.06795110.14 5.49787129.2890.10307--14.5590.12169--55.267 13000.07029110.037 5.47256127.3590.10327--15.2030.11718--57.902 13500.06417110.3 5.44429125.4320.10350--15.8510.11263--60.543 14000.06615110.33 5.41593123.5310.10367--16.460.10814--63.335 14500.06834110.566 5.38670121.6270.10385--17.0390.10311--66.301 15000.07037111.203 5.35727119.730.10409--17.6820.09824--69.317 15500.06361106.262 5.33305117.890.10444--18.3240.09725--65.446 16000.06510104.31 5.304151160.10462--18.9390.09352--67.448 16500.06709103.387 5.26958114.1250.10474--19.6560.09017--69.038 17000.06871101.77 5.24166112.2510.10505--20.2940.08614--71.347 17500.07086100.502 5.21283110.4130.10523--20.9450.08224--73.345 18000.0732899.404 5.18411108.5490.10547--21.5770.07847--75.924 18500.0757798.261 5.15395106.6740.10576--22.3750.07419--78.51 19000.0784597.17 5.12325104.8490.10592--23.0120.07045--81.64 19500.0809696.588 5.09284102.9960.10612--23.7420.06627--85.166 20000.0837895.835 5.06020101.1840.10637--24.4190.06270--88.825 20500.0871094.791 5.0301599.3460.10667--25.0360.05860--93.023 21000.0895794.206 5.0017597.5190.10686--25.8350.05542--97.743 21500.0916093.044 4.9697795.7150.10722--26.5910.05191--103.413 22000.0958092.472 4.9354193.9260.10725--27.2530.04928--109.11 22500.0980191.352 4.9042592.1250.10767--27.9310.04677--115.508
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MMG3011NT1
9
RF Device Data
Freescale Semiconductor,Inc.
50OHM TYPICAL CHARACTERISTICS
Table https://www.doczj.com/doc/1b16024327.html,mon Emitter S--Parameters (V CC =5Vdc,T A =25°C,50Ohm System)(continued)
f MHz S 11
S 21
S 12
S 22
|S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ23000.1012590.343 4.8721590.3270.10777--28.670.04452--122.29623500.1038489.16 4.8406488.5610.10817--29.3940.04294--129.54124000.1070288.397 4.8059786.770.10841--30.2110.04205--138.124500.1100887.519 4.7737385.0060.10869--30.9240.04158--146.36325000.1124186.11 4.7385283.2890.10879--31.6610.04157--154.57825500.1154085.045 4.7108081.530.10916--32.4080.04231--162.98426000.1182483.877 4.6776579.8030.10931--33.2030.04340--171.0626500.1209082.346 4.6461678.0610.10958--33.9290.04508--178.59127000.1234081.156 4.6137276.3240.10994--34.6210.04725174.36627500.1260679.687 4.5806374.6050.10994--35.4440.05010167.16228000.1292278.399 4.5502272.8810.11034--36.2460.05315160.78128500.1314477.016 4.5186371.1720.11063--37.030.05620154.62429000.1342875.734 4.4905769.4950.11089--37.7540.06004149.45129500.1371374.325 4.4536667.7340.11109--38.640.06342144.06530000.1391472.892 4.4253666.0610.11140--39.4070.06743138.97230500.1432071.422 4.3973064.3870.11161--40.1640.07181134.7731000.1461370.248 4.3656162.6980.11191--40.9680.07596130.07931500.1489869.069 4.3342061.0070.11211--41.8610.08043125.99232000.1526467.768 4.3055659.3160.11252--42.740.08543122.13832500.1565666.632 4.2744657.6480.11258--43.5280.09047117.96333000.1594865.655 4.2447955.9840.11281--44.4480.09540114.2933500.1632564.574 4.2154654.3010.11317--45.2470.10082110.96734000.1669463.679 4.1874352.6380.11329--46.1340.10661107.41234500.1711362.876 4.1574050.9610.11352--46.9920.11195104.19235000.1749362.049 4.1268849.2880.11374--47.8560.11808101.20435500.1790661.193 4.0989247.630.11391--48.7680.1240498.1823600
0.18310
60.522
4.06981
45.971
0.11410
--49.604
0.13009
95.337
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10
RF Device Data
Freescale Semiconductor,Inc.
MMG3011NT1
Figure 20.Recommended Mounting Configuration
NOTES:
1.THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN.
2.DEPENDING ON PCB DESIGN RULES,AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3.IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN,THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE.
4.RECOMMENDED VIA PATTERN SHOWN HAS 0.381x 0.762MM PITCH.
Recommended Solder Stencil
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分销商库存信息: FREESCALE
MMG3011NT1