Features特征
High Voltage : BV DSS=650V(Min.)
Low C rss : C rss=16pF(Typ.)
Low gate charge : Qg=35nC(Typ.)
Low R DS(on) : R DS(on)=0.85 (Max.)
Ordering Information订购信息
Type No.Marking Package Code SMK0965F SMK0965TO-220F-3L SMK0965F (HF)SMK0965TO-220F-3L *SMK0965F : Pb Free Product
*SMK0965F (HF) : Halogen Free Product PIN Connection
D
G
G
D S
S
Marking Diagram
Column 1 : Manufacturer
Column 2 : Production Information
e.g.) GFYMDD
-. G : Option Code (H : Halogen Free)
-. F : Factory Management Code
-. YMDD : Date Code (Year, Month, Date)
Column 3 : Device Code
Characteristic Symbol Rating Unit Drain-source voltage V DSS650V Gate-source voltage V GSS30V
Drain current (DC) *I D
T C=25 C9A T C=100 C 5.5A
Drain current (Pulsed) *I DM36A Power dissipation P D40W Avalanche current (Single)I AS9A Single pulsed avalanche energy E AS250mJ Avalanche current (Repetitive)I AR9A Repetitive avalanche energy E AR11.6mJ Junction temperature T J150
C Storage temperature range T stg-55~150
* Limited by maximum junction temperature
Characteristic Symbol Typ.Max.Unit
Thermal Junction-case R th(J-C)- 3.1
C/W resistance Junction-ambient R th(J-A)-62.5
(T C=25 C unless otherwise noted)
Note ;
Repetitive rating : Pulse width limited by maximum junction
temperature L=5.7mH, I AS=9A, V DD=50V, R G=25 , Starting T J=25 C
Pulse Test : Pulse width 300us, Duty cycle 2%
Essentially independent of operating temperature
重复额定值：脉冲宽度受最大结温L = 5.7mH，IAS = 9A，VDD = 50V，RG = 25，开始TJ = 25 C限制脉冲测试：脉冲宽度300us，占空比2％基本上与工作温度无关
Electrical Characteristic Curves电气特性曲线Fig. 1 I D - V DS Fig. 2 I D - V GS
Fig. 3 R DS(on) -I D Fig. 4 I S - V SD Fig. 5 Capacitance - V DS Fig.6 V GS - Q G
Electrical Characteristic Curves
Fig. 7 V DSS - T J Fig.8 R DS(on) - T J
Fig. 9 I D - T C Fig. 10 Safe Operating Area
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 E AS Test Circuit & Waveform
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
Outline Dimension unit: mm
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