Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V)
r DS(on) (W )
I D (A)
0.080 @ V GS = -10 V -3.9-30
0.135 @ V GS = -4.5 V
-3.0
S G 11
P-Channel MOSFET
S G 2
2
P-Channel MOSFET
S 1D 1G 1D 1S 2D 2G 2
D 2
SO-8
5
678Top View
234
1Ordering Information:Si4947ADY
Si4947ADY -T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Unit
Drain-Source Voltage V DS -30Gate-Source Voltage
V GS "20
V
T A = 25_C -3.9 -3.0Continuous Drain Current (T J = 150_C)a T A = 70_C
I D -3.1
-2.4
Pulsed Drain Current
I DM -20
A
continuous Source Current (Diode Conduction)a I S -1.7-1.0Maximum Power Dissipation T A = 25_C 2.0 1.2a
T A = 70_C P D 1.3
0.76
W Operating Junction and Storage Temperature Range
T J , T stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical
Maximum
Unit
M i
J ti t A bi t t v 10 sec 5462.5Maximum Junction-to-Ambient a Steady State R thJA 87105_Maximum Junction-to-Foot
Steady State
R thJF
34
45
C/W
Notes
a.Surface Mounted on 1” x 1” FR4 Board.
Vishay Siliconix
SPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage V GS(th)V DS = V GS , I D = -250 m A -1.0
V Gate-Body Leakage
I GSS V DS = 0 V, V GS = "20 V "100nA V DS = -30 V, V GS = 0 V -1Zero Gate Voltage Drain Current I DSS V DS = -30 V, V GS = 0 V, T J = 70_C
-10
m A On-State Drain Current a
I D(on)V DS = -5 V, V GS = -10 V -15
A Drain Source On State Resistance DS()V GS = -10 V, I D = -3.9 A 0.0620.080Drain-Source On-State Resistance a r DS(on)V GS = -4.5 V, I D = -3.0 A 0.1050.135
W Forward Transconductance a g fs V DS = -15 V, I D = -2.5 A 5.0S Diode Forward Voltage a
V SD
I S = -1.7 A, V GS = 0 V
-0.82
-1.2V
Dynamic b
Total Gate Charge Q g 5.88
Gate-Source Charge Q gs V DS = -10 V, V GS = -5 V, I D = -3.9 A
2nC
Gate-Drain Charge Q gd 1.9Turn-On Delay Time t d(on)815Rise Time
t r V 918Turn-Off Delay Time t d(off)DD = -10 V, R L = 10 W
I D ^ -1 A, V GEN = -10 V, R G = 6 W 2140ns
Fall Time
t f 1020Source-Drain Reverse Recovery Time
t rr
I F = -1.7 A, di/dt = 100 A/m s 27
40
Notes
a.Pulse test; pulse width v 300 m s, duty cycle v 2%.
b.Guaranteed by design, not subject to production testing.
1
2
3
4
5
6
7
2
4
6
8
V DS - Drain-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)
Vishay Siliconix
0.60.81.01.21.41.61.8-50
-250255075100125150
02
4
6
8
10
2
4
6
8
10
3
6
9
12
15
V DS - Drain-to-Source Voltage (V)
I D - Drain Current (A)Gate Charge
- G a t e -t o -S o u r c e V o l t a g e (V )
Q g - Total Gate Charge (nC)
V G S On-Resistance vs. Junction Temperature
(N o r m a l i z e d )
- O n -R e s i s t a n c e (r D S (o n )W )0.0
0.3
0.6
0.9
1.2
1.5
0.00
0.08
0.16
0.24
0.32
0.40
2
4
6
8
10
30
10
1Source-Drain Diode Forward Voltage
- O n -R e s i s t a n c e (r D S (o n )W )
V SD - Source-to-Drain Voltage (V)
V GS - Gate-to-Source Voltage (V)
- S o u r c e C u r r e n t (A )
I S 0
6
12
18
24
30
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power, Junction-to-Ambient
10-3
10-2
1
10600
10-110-4
100-0.4
-0.20.00.20.40.6
0.8Threshold Voltage
V a r i a n c e (V )
V G S (t h )Square Wave Pulse Duration (sec)
N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e
10-3
10-21
10
10-110-4
21
0.1
0.01
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e