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SI4947ADY-T1中文资料

SI4947ADY-T1中文资料
SI4947ADY-T1中文资料

Vishay Siliconix

Dual P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

V DS (V)

r DS(on) (W )

I D (A)

0.080 @ V GS = -10 V -3.9-30

0.135 @ V GS = -4.5 V

-3.0

S G 11

P-Channel MOSFET

S G 2

2

P-Channel MOSFET

S 1D 1G 1D 1S 2D 2G 2

D 2

SO-8

5

678Top View

234

1Ordering Information:Si4947ADY

Si4947ADY -T1 (with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs Steady State

Unit

Drain-Source Voltage V DS -30Gate-Source Voltage

V GS "20

V

T A = 25_C -3.9 -3.0Continuous Drain Current (T J = 150_C)a T A = 70_C

I D -3.1

-2.4

Pulsed Drain Current

I DM -20

A

continuous Source Current (Diode Conduction)a I S -1.7-1.0Maximum Power Dissipation T A = 25_C 2.0 1.2a

T A = 70_C P D 1.3

0.76

W Operating Junction and Storage Temperature Range

T J , T stg

-55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol Typical

Maximum

Unit

M i

J ti t A bi t t v 10 sec 5462.5Maximum Junction-to-Ambient a Steady State R thJA 87105_Maximum Junction-to-Foot

Steady State

R thJF

34

45

C/W

Notes

a.Surface Mounted on 1” x 1” FR4 Board.

Vishay Siliconix

SPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V GS(th)V DS = V GS , I D = -250 m A -1.0

V Gate-Body Leakage

I GSS V DS = 0 V, V GS = "20 V "100nA V DS = -30 V, V GS = 0 V -1Zero Gate Voltage Drain Current I DSS V DS = -30 V, V GS = 0 V, T J = 70_C

-10

m A On-State Drain Current a

I D(on)V DS = -5 V, V GS = -10 V -15

A Drain Source On State Resistance DS()V GS = -10 V, I D = -3.9 A 0.0620.080Drain-Source On-State Resistance a r DS(on)V GS = -4.5 V, I D = -3.0 A 0.1050.135

W Forward Transconductance a g fs V DS = -15 V, I D = -2.5 A 5.0S Diode Forward Voltage a

V SD

I S = -1.7 A, V GS = 0 V

-0.82

-1.2V

Dynamic b

Total Gate Charge Q g 5.88

Gate-Source Charge Q gs V DS = -10 V, V GS = -5 V, I D = -3.9 A

2nC

Gate-Drain Charge Q gd 1.9Turn-On Delay Time t d(on)815Rise Time

t r V 918Turn-Off Delay Time t d(off)DD = -10 V, R L = 10 W

I D ^ -1 A, V GEN = -10 V, R G = 6 W 2140ns

Fall Time

t f 1020Source-Drain Reverse Recovery Time

t rr

I F = -1.7 A, di/dt = 100 A/m s 27

40

Notes

a.Pulse test; pulse width v 300 m s, duty cycle v 2%.

b.Guaranteed by design, not subject to production testing.

1

2

3

4

5

6

7

2

4

6

8

V DS - Drain-to-Source Voltage (V)

V GS - Gate-to-Source Voltage (V)

Vishay Siliconix

0.60.81.01.21.41.61.8-50

-250255075100125150

02

4

6

8

10

2

4

6

8

10

3

6

9

12

15

V DS - Drain-to-Source Voltage (V)

I D - Drain Current (A)Gate Charge

- G a t e -t o -S o u r c e V o l t a g e (V )

Q g - Total Gate Charge (nC)

V G S On-Resistance vs. Junction Temperature

(N o r m a l i z e d )

- O n -R e s i s t a n c e (r D S (o n )W )0.0

0.3

0.6

0.9

1.2

1.5

0.00

0.08

0.16

0.24

0.32

0.40

2

4

6

8

10

30

10

1Source-Drain Diode Forward Voltage

- O n -R e s i s t a n c e (r D S (o n )W )

V SD - Source-to-Drain Voltage (V)

V GS - Gate-to-Source Voltage (V)

- S o u r c e C u r r e n t (A )

I S 0

6

12

18

24

30

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Single Pulse Power, Junction-to-Ambient

10-3

10-2

1

10600

10-110-4

100-0.4

-0.20.00.20.40.6

0.8Threshold Voltage

V a r i a n c e (V )

V G S (t h )Square Wave Pulse Duration (sec)

N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e

10-3

10-21

10

10-110-4

21

0.1

0.01

Normalized Thermal Transient Impedance, Junction-to-Foot

Square Wave Pulse Duration (sec)

N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e

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