DATA SHEET
Product speci?cation
Supersedes data of 2000Mar 28
2001Nov 01
DISCRETE SEMICONDUCTORS
BGD906; BGD906MI
860MHz, 21.5dB gain power doubler amplifier
book, halfpage
M3D252
860MHz, 21.5dB gain power doubler ampli?er
BGD906; BGD906MI
FEATURES ?Excellent linearity ?Extremely low noise
?Excellent return loss properties ?Silicon nitride passivation ?Rugged construction
?Gold metallization ensures excellent reliability.APPLICATIONS
?CATV systems operating in the 40to 900MHz frequency range.DESCRIPTION
Hybrid amplifier modules in a SOT115J package operating with a voltage supply of 24V (DC). Both modules are electrically identical, only the pinning is different.
PINNING - SOT115J
PIN DESCRIPTION
BGD906
BGD906MI 1input output 2, 3common common 5+V B +V B 7, 8common common 9
output
input
Fig.1 Simplified outline SOT115J.
handbook, halfpage
7
8
9
2
351
Side view
MSA319
QUICK REFERENCE DATA LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER
CONDITIONS
MIN.MAX.UNIT G p power gain
f =50MHz 21.221.8dB f =900MHz
2223dB I tot
total current consumption (DC)
V B =24V; T mb =35°C
405
435
mA
SYMBOL PARAMETER
MIN.
MAX.UNIT
V B supply voltage ?30V V i RF input voltage ?70dBmV T stg storage temperature
?40+100°C T mb
operating mounting base temperature
?20+100
°C
860MHz, 21.5dB gain power doubler ampli?er BGD906; BGD906MI
CHARACTERISTICS
Bandwidth 40to900MHz; V B=24V; T mb=35°C; Z S=Z L=75?
SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT G p power gain f=50MHz21.221.521.8dB
f=900MHz2222.523dB SL slope straight line f=40to900MHz0.51 1.5dB FL?atness straight line f=40to900MHz??±0.35dB
s11input return losses f=40to80MHz2225?dB
f=80to160MHz2124?dB
f=160to320MHz1823?dB
f=320to550MHz1723?dB
f=550to900MHz1620?dB
s22output return losses f=40to80MHz2225?dB
f=80to160MHz2125?dB
f=160to320MHz2023?dB
f=320to550MHz1922?dB
f=550to650MHz1824?dB
f=650to750MHz1723?dB
f=750to900MHz1621?dB
s21phase response f=50MHz?45?+45deg CTB composite triple beat49chs?at; V o=47dBmV; f m=859.25MHz??68.5?66dB
77chs?at; V o=44dBmV; f m=547.25MHz??70?67dB
110chs?at; V o=44dBmV; f m=745.25MHz??63?61dB
129 chs ?at; V o=44dBmV; f m=859.25MHz??59?57dB
110chs; f m=397.25MHz;
??62.5?60.5dB
V o=49dBmV at 550MHz; note1
129chs; f m=697.25MHz;
??57?54.5dB
V o=49.5dBmV at 860MHz; note2
X mod cross modulation49chs?at; V o=47dBmV; f m=55.25MHz??64?62dB
77chs?at; V o=44dBmV; f m=55.25MHz??67.5?65dB
110chs?at; V o=44dBmV; f m=55.25MHz??64?61.5dB
129chs?at; V o=44dBmV; f m=55.25MHz??61?60dB
110chs; f m=397.25MHz;
??60?58dB
V o=49dBmV at 550MHz; note1
129chs; f m=859.25MHz;
??56.5?55dB
V o=49.5dBmV at 860MHz; note2
860MHz, 21.5dB gain power doubler ampli?er BGD906; BGD906MI
CSO composite second
order distortion 49chs?at; V o=47dBmV; f m=860.5MHz??63?59dB 77chs?at; V o=44dBmV; f m=548.5MHz??74?65dB 110chs?at; V o=44dBmV; f m=746.5MHz??66?58dB 129chs?at; V o=44dBmV; f m=860.5MHz??59?54dB 110chs; f m=150MHz;
V o=49dBmV at 550MHz; note1
??64?60dB
129chs; f m=150MHz;
V o=49.5dBmV at 860MHz; note2
??60?54dB
d2second order distortion note3??83?70dB
note4??81.5?73dB
note5??79?76dB
V o output voltage d im=?60dB; note663.564.5?dBmV
d im=?60dB; note764.566.5?dBmV
d im=?60dB; note866.569?dBmV
CTB compression=1dB; 129chs ?at;
f=859.25MHz
48.549?dBmV
CSO compression=1dB; 129chs ?at;
f=860.5MHz
5154?dBmV NF noise ?gure f=50MHz?5 5.5dB
f=550MHz? 4.55dB
f=750MHz?56dB
f=900MHz?67.5dB
I tot total current
consumption (DC)note9405420435mA
SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT Notes
1.Tilt=9dB (50to550MHz)
tilt=3.5dB at?6dB offset (550to750MHz).
2.Tilt=12.5dB (50to860MHz).
3.f p=55.25MHz; V p=44dBmV;
f q=805.25MHz; V q=44dBmV;
measured at f p+f q=860.5MHz.
4.f p=5
5.25MHz; V p=44dBmV;
f q=691.25MHz; V q=44dBmV;
measured at f p+f q=746.5MHz.
5.f p=55.25MHz; V p=44dBmV;
f q=493.25MHz; V q=44dBmV;
measured at f p+f q=548.5MHz.
6.Measured according to DIN45004B:
f p=851.25MHz; V p=V o;
f q=858.25MHz; V q=V o?6dB;
f r=860.25MHz; V r=V o?6dB;
measured at f p+f q?f r=849.25MHz.7.Measured according to DIN45004B:
f p=740.25MHz; V p=V o;
f q=747.25MHz; V q=V o?6dB;
f r=749.25MHz; V r=V o?6dB;
measured at f p+f q?f r=738.25MHz.
8.Measured according to DIN45004B:
f p=540.25MHz; V p=V o;
f q=547.25MHz; V q=V o?6dB;
f r=549.25MHz; V r=V o?6dB;
measured at f p+f q?f r=538.25MHz.
9.The module normally operates at V B=24V, but is
able to withstand supply transients up to 35V.
860MHz, 21.5dB gain power doubler ampli?er BGD906; BGD906MI
handbook, halfpage
0V o (dBmV)
f (MHz)
CTB (dB)200?50
?60
?80?90
?70
5248
403644400600
800
MGS661
(1)
(1)
(2)(3)(4)
(2)(4)
(3)Fig.2
Composite triple beat as a function of frequency under tilted conditions.
(1)V o .(2)Typ.+3σ.
Z S =Z L =75?; V B =24V; 110chs; tilt =9dB (50to 550MHz);tilt =3.5dB at ?6dB offset (550to 750MHz).(3)Typ.(4)Typ.?3σ.
handbook, halfpage
0V o
(dBmV)f (MHz)
X mod (dB)200?50
?60?80?90
?70
5248
40
3644
400600
800
MGS662
(1)
(1)
(3)
(2)(4)(3)(2)
(4)
Fig.3
Cross modulation as a function of frequency under tilted conditions.
(1)V o .(2)Typ.+3σ.
Z S =Z L =75?; V B =24V; 110chs; tilt =9dB (50to 550MHz);tilt =3.5dB at ?6dB offset (550to 750MHz).(3)Typ.(4)Typ.?3σ.
handbook, halfpage
0V o (dBmV)f (MHz)
CSO (dB)200?50
?60
?80?90
?70
5248
40
3644
400600
800
MGS663
(1)(1)
(2)
(2)
(3)(4)
(3)
(4)
Fig.4
Composite second order distortion as a function of frequency under tilted conditions.
(1)V o .
(2)Typ.+3σ.
Z S =Z L =75?; V B =24V; 110chs; tilt =9dB (50to 550MHz);tilt =3.5dB at ?6dB offset (550to 750MHz).(3)Typ.
(4)Typ.?3σ.
860MHz, 21.5dB gain power doubler ampli?er BGD906; BGD906MI
handbook, halfpage
0V o (dBmV)f (MHz)
CTB (dB)2001000?50
?60
?80?90
?705248
403644400600
800
MGS664
(4)
(1)(2)(3)Fig.5
Composite triple beat as a function of frequency under tilted conditions.
(1)V o .(2)Typ.+3σ.
Z S =Z L =75?; V B =24V; 129chs;tilt =12.5dB (50to 860MHz).(3)Typ.(4)Typ.?3σ.
handbook, halfpage
0V o (dBmV)f (MHz)
X mod (dB)2001000?50
?60
?80?90
?705248
40
3644
400600
800
MGS665
(3)(1)
(2)(4)
Fig.6
Cross modulation as a function of frequency under tilted conditions.
(1)V o .(2)Typ.+3σ.
Z S =Z L =75?; V B =24V; 129chs;tilt =12.5dB (50to 860MHz).(3)Typ.(4)Typ.?3σ.
handbook, halfpage
0V o (dBmV)
f (MHz)
CSO (dB)
2001000?50
?60
?80?90
?70
5248
40
3644
400600
800
MGS666
(2)
(3)
(4)
(1)
Fig.7
Composite second order distortion as a function of frequency under tilted conditions.
(1)V o .
(2)Typ.+3σ.
Z S =Z L =75?; V B =24V; 129chs;tilt =12.5dB (50to 860MHz).(3)Typ.
(4)Typ.?3σ.
860MHz, 21.5dB gain power doubler ampli?er BGD906; BGD906MI
handbook, halfpage
40
V o (dBmV)
CTB (dB)45?20
?30
?50?70
?40?60
50
55
MGS667
(3)
(2)(1)Fig.8
Composite triple beat as a function of output voltage.
(1)Typ.+3σ.(2)Typ.(3)Typ.?3σ.
Z S =Z L =75?; V B =24V; 129chs; f m =859.25MHz.handbook, halfpage
40
V o (dBmV)
CSO (dB)45?20
?30
?50
?70
?40
?60
50
55
MGS668
(3)
(2)
(1)Fig.9
Composite second order distortion as a function of output voltage.
(1)Typ.+3σ.(2)Typ.(3)Typ.?3σ.
Z S =Z L =75?; V B =24V; 129chs; f m =860.5MHz.
860MHz, 21.5dB gain power doubler ampli?er
BGD906; BGD906MI
PACKAGE OUTLINE
UNIT
A 2max.
c
e
e 1
q
Q max.q 1
q 2
U 1max.
U 2W
REFERENCES
OUTLINE VERSION EUROPEAN PROJECTION
ISSUE DATE IEC
JEDEC
EIAJ
mm 20.8
9.1
0.51
0.38
0.2527.2 2.5413.752.54 5.0812.78.8
4.153.85
2.4
38.125.410.2 4.244.75
8
0.250.1
3.8
b
F
p 6-32UNC
y w
S
DIMENSIONS (mm are the original dimensions) SOT115J
0510 mm
scale
A
max.D max.L min.E
max.
Z max.Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
U 1
q
q 2q 1
b
F
S
A
Z
p
E
A 2
L
c
d
Q
U 2
M
w 7
8
9
2
3
W
e e 1
5
p
1
d max.y M B
y M B
B
99-02-06
y M B
860MHz, 21.5dB gain power doubler ampli?er
BGD906; BGD906MI
DATA SHEET STATUS Notes
1.Please consult the most recently issued data sheet before initiating or completing a design.
2.The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL https://www.doczj.com/doc/0b5912602.html,.DATA SHEET STATUS (1)PRODUCT STATUS (2)DEFINITIONS
Objective data
Development
This data sheet contains data from the objective speci?cation for product development. Philips Semiconductors reserves the right to change the speci?cation in any manner without notice.
Preliminary data Quali?cation
This data sheet contains data from the preliminary speci?cation.Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product.
Product data Production
This data sheet contains data from the product speci?cation. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Noti?cation (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied.Exposure to limiting values for extended periods may affect device reliability.
Application information Applications that are described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
DISCLAIMERS
Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury.Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes,without notice,in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products,conveys no licence or title under any patent, copyright, or mask work right to these products,and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
860MHz, 21.5dB gain power doubler ampli?er BGD906; BGD906MI
NOTES
860MHz, 21.5dB gain power doubler ampli?er BGD906; BGD906MI
NOTES
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? Koninklijke Philips Electronics N.V. 2001SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract,is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands613518/04/pp12 Date of release:2001Nov01Document order number: 939775008863